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The study focuses on studying the basic properties of memristors in RLC circuit and diode circuit. Mathematical models are built up separately for memristors in the two types of circuits. In order to understand the influence of the model's parameters on the circuits' properties, simulations are made for the two mathematical models. The model's parameters include properties such as the capacitance, resistance and inductance. In the final part of the paper, we give and make conclusions based on the simulation results.
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Keywords:
- memristor /
- RLC circuit /
- diode circuit /
- mathematic model
[1] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[2] Zhang X, Zhou Y Z, Bi Q, Yang X H, Zu Y X 2010 Acta Phys. Sin. 59 6673 (in Chinese)[张旭, 周玉泽, 闭强, 杨兴华, 俎云霄 2010 59 6673]
[3] [4] [5] Song D H, Lv M F, Ren X, Zu Y X 2012 Acta Phys. Sin. 61 118101 (in Chinese)[宋德华, 吕梦菲, 任翔, 俎云霄 2012 61 118101]
[6] [7] James M, He T 2008 Nature 453 42
[8] Dmitri B S, Gregory S S, Duncan R S, Stanley W 2008 Nature 453 45
[9] [10] [11] Di Ventra M, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1717
[12] [13] Wang Y, Fei W, Yu H 2012 CNNA 13th International Workshop on IEEE 1-6
[14] [15] Fang X D, Tang Y H, Wu J J 2012 Chin. Phys. B 21 098901
[16] Kim H, Sah M P, Yang C, Roska T, Chua L O 2011 IEEE Trans. Circuits Syst. I Reg. Papers 59 148
[17] [18] [19] Li Z W, Liu H J, Xu X 2013 Acta Phys. Sin. 62 096401 (in Chinese)[李智炜, 刘海军, 徐欣 2013 62 096401]
[20] [21] Bao B C, Liu Z, Xu J P 2010 Chin. Phys. B 19 030510
[22] Tian X B, Xu H, Li Q J 2014 Acta Phys. Sin. 63 048401 (in Chinese)[田晓波, 徐晖, 李清江 2014 63 048401]
[23] [24] Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 217306 (in Chinese)[贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 217306]
[25] [26] [27] Bao B C, Wang C L, Wu H G, Qiao X H 2014 Acta Phys. Sin. 63 020504 (in Chinese)[包伯成, 王春丽, 武花干, 乔晓华 2014 63 020504]
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[1] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[2] Zhang X, Zhou Y Z, Bi Q, Yang X H, Zu Y X 2010 Acta Phys. Sin. 59 6673 (in Chinese)[张旭, 周玉泽, 闭强, 杨兴华, 俎云霄 2010 59 6673]
[3] [4] [5] Song D H, Lv M F, Ren X, Zu Y X 2012 Acta Phys. Sin. 61 118101 (in Chinese)[宋德华, 吕梦菲, 任翔, 俎云霄 2012 61 118101]
[6] [7] James M, He T 2008 Nature 453 42
[8] Dmitri B S, Gregory S S, Duncan R S, Stanley W 2008 Nature 453 45
[9] [10] [11] Di Ventra M, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1717
[12] [13] Wang Y, Fei W, Yu H 2012 CNNA 13th International Workshop on IEEE 1-6
[14] [15] Fang X D, Tang Y H, Wu J J 2012 Chin. Phys. B 21 098901
[16] Kim H, Sah M P, Yang C, Roska T, Chua L O 2011 IEEE Trans. Circuits Syst. I Reg. Papers 59 148
[17] [18] [19] Li Z W, Liu H J, Xu X 2013 Acta Phys. Sin. 62 096401 (in Chinese)[李智炜, 刘海军, 徐欣 2013 62 096401]
[20] [21] Bao B C, Liu Z, Xu J P 2010 Chin. Phys. B 19 030510
[22] Tian X B, Xu H, Li Q J 2014 Acta Phys. Sin. 63 048401 (in Chinese)[田晓波, 徐晖, 李清江 2014 63 048401]
[23] [24] Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 217306 (in Chinese)[贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 217306]
[25] [26] [27] Bao B C, Wang C L, Wu H G, Qiao X H 2014 Acta Phys. Sin. 63 020504 (in Chinese)[包伯成, 王春丽, 武花干, 乔晓华 2014 63 020504]
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