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2022, 71(8): 084101.
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Liu Chang-Shi. A reliable and accurate model of photoelectron yield spectrum and its applications. Acta Physica Sinica,
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2016, 65(1): 018501.
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2012, 61(4): 047301.
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Jiang Zhi-Hong, Wang Hui, Gao Chao. A evolving network model generated by random walk and policy attachment. Acta Physica Sinica,
2011, 60(5): 058903.
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2011, 60(1): 017202.
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Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong. An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica,
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Li Qi, Zhang Bo, Li Zhao-Ji. A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica,
2008, 57(3): 1891-1896.
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Liu Zhi-Feng, Lai Yuan-Ting, Zhao Gang, Zhang You-Wei, Liu Zheng-Feng, Wang Xiao-Hong. The critical scaling property of random percolation porous media. Acta Physica Sinica,
2008, 57(4): 2011-2015.
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Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica,
2007, 56(6): 3504-3508.
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Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng. Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica,
2006, 55(7): 3622-3628.
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Mou Wei-Wei, Xu Xiao-Liang. The percolation simulation of the infection growth models. Acta Physica Sinica,
2006, 55(6): 2871-2876.
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LIU HONG-XIA, FANG JIAN-PING, HAO YUE. EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(6): 1172-1177.
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