| [1] |
Meng Shao-Yi, Hao Qi, Lyu Guo-Jian, Qiao Ji-Chao. The β relaxation process of La-based amorphous alloy: Effect of annealing and strain amplitude. Acta Physica Sinica,
2023, 72(7): 076101.
doi: 10.7498/aps.72.20222389
|
| [2] |
Jiang Yong, Yuan Xiao-Dong, Wang Hai-Jun, Liao Wei, Liu Chun-Ming, Xiang Xia, Qiu Rong, Zhou Qiang, Gao Xiang, Yang Yong-Jia, Zheng Wan-Guo, Zu Xiao-Tao, Miao Xin-Xiang. Effect of thermal annealing on damage growth of mitigated site on fused silica. Acta Physica Sinica,
2016, 65(4): 044209.
doi: 10.7498/aps.65.044209
|
| [3] |
Jia Yan-Li, Yang Hua, Yuan Jie, Yu He-Shan, Feng Zhong-Pei, Xia Hai-Liang, Shi Yu-Jun, He Ge, Hu Wei, Long You-Wen, Zhu Bei-Yi, Jin Kui. A brief analysis of annealing process for electron-doped cuprate superconductors. Acta Physica Sinica,
2015, 64(21): 217402.
doi: 10.7498/aps.64.217402
|
| [4] |
Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua. Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica,
2015, 64(19): 198801.
doi: 10.7498/aps.64.198801
|
| [5] |
Jiang Ke, Lu Wu, Hu Tian-Le, Wang Xin, Guo Qi, He Cheng-Fa, Liu Mo-Han, Li Xiao-Long. Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment. Acta Physica Sinica,
2015, 64(13): 136103.
doi: 10.7498/aps.64.136103
|
| [6] |
Zhang Bin, Wang Wei-Li, Niu Qiao-Li, Zou Xian-Shao, Dong Jun, Zhang Yong. Effects of annealing in H2 atomsphere on optoelectronical properties of Nb-doped TiO2 thin films. Acta Physica Sinica,
2014, 63(6): 068102.
doi: 10.7498/aps.63.068102
|
| [7] |
Gu Wen-Ping, Zhang Lin, Li Qing-Hua, Qiu Yan-Zhang, Hao Yue, Quan Si, Liu Pan-Zhi. Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2014, 63(4): 047202.
doi: 10.7498/aps.63.047202
|
| [8] |
Wu Chuan-Lu, Ma Ying, Jiang Li-Mei, Zhou Yi-Chun, Li Jian-Cheng. Computer simulation of electric properties of metal-ferroelectric-substrate structured ferroelectric field effect transistor under ionizing radiation. Acta Physica Sinica,
2014, 63(21): 216102.
doi: 10.7498/aps.63.216102
|
| [9] |
Hu Tian-Le, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wu Xue, Wang Xin. Effects of irradiation on PNP input bipolar operational amplifiers in different radiation environments and under various post-annealing treatments. Acta Physica Sinica,
2013, 62(7): 076105.
doi: 10.7498/aps.62.076105
|
| [10] |
Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing. The effect of ITO annealing on electrical characteristic of GaN based LED. Acta Physica Sinica,
2012, 61(13): 137303.
doi: 10.7498/aps.61.137303
|
| [11] |
Gao Bo, Liu Gang, Wang Li-Xin, Han Zheng-Sheng, Zhang Yan-Fei, Wang Chun-Ling, Wen Jing-Chao. Research on the total dose effects for domestic VDMOS devices used in satellite. Acta Physica Sinica,
2012, 61(17): 176107.
doi: 10.7498/aps.61.176107
|
| [12] |
Hu Mei-Jiao, Li Cheng, Xu Jian-Fang, Lai Hong-Kai, Chen Song-Yan. Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes. Acta Physica Sinica,
2011, 60(7): 078102.
doi: 10.7498/aps.60.078102
|
| [13] |
Luo Qing-Hong, Lou Yan-Zhi, Zhao Zhen-Ye, Yang Hui-Sheng. Effect of annealing on microstructure and mechanical propertiesof AlTiN multilayer coatings. Acta Physica Sinica,
2011, 60(6): 066201.
doi: 10.7498/aps.60.066201
|
| [14] |
Song Chao, Chen Gu-Ran, Xu Jun, Wang Tao, Sun Hong-Cheng, Liu Yu, Li Wei, Chen Kun-Ji. Properties of electric transport in crystallized silicon films under different annealing temperatures. Acta Physica Sinica,
2009, 58(11): 7878-7883.
doi: 10.7498/aps.58.7878
|
| [15] |
Zheng Yu-Zhan, Lu Wu, Ren Di-Yuan, Wang Yi-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa. Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinica,
2009, 58(8): 5572-5577.
doi: 10.7498/aps.58.5572
|
| [16] |
Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin. Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica,
2008, 57(4): 2562-2566.
doi: 10.7498/aps.57.2562
|
| [17] |
Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
2006, 55(11): 6085-6089.
doi: 10.7498/aps.55.6085
|
| [18] |
Wu Shi-Liang, Chen Ye-Qing, Wu Yi-Chu, Wang Shao-Jie, Wen Xi-Yu, Zhai Tong-Guang. Positron annihilation study of hot band of a continuous cast AA 2037 Al alloy after annealing. Acta Physica Sinica,
2006, 55(11): 6129-6135.
doi: 10.7498/aps.55.6129
|
| [19] |
Sun Cheng-Wei, Liu Zhi-Wen, Zhang Qing-Yu. Influence of annealing temperature on the microstructure and photoluminescence of ZnO films. Acta Physica Sinica,
2006, 55(1): 430-436.
doi: 10.7498/aps.55.430
|
| [20] |
He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong. Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica,
2004, 53(9): 3125-3129.
doi: 10.7498/aps.53.3125
|
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