STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS

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STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS

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WANG WAN-LU, LIAO KE-JUN

Acta Phys. Sin., 1987, 36(12): 1529-1537.

Abstract
We have found experimentally that the stress in a-Si:H films is Compressive, and tensile in a-SiNx:H film on the flate silicon substrate with certain content of Si-H bond. The stress in a-Si:H/a-SiNx:H/c-Si system can be made to reach a minimum by suitably chosing some conditions of depositing. The minimum stress may keep for a long time. It is shown that the stress changes with annealing temperature. Some explanation to these results are also given.
Authors and contacts
WANG WAN-LU,

LIAO KE-JUN

1.
兰州大学物理系
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