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2003, 52(6): 1465-1468.
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1994, 43(6): 966-972.
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1994, 43(11): 1847-1853.
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WANG YIN-YUE, XU HUAI-ZHE, CHEN GUANG-HUA. INVESTIGATION ON THERMAL STABILITY OF REACTIVE- SPUTTERING a-Si:H/a-Ge:H SUPERLATTICES. Acta Physica Sinica,
1992, 41(2): 302-305.
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WANG HONG, ZHU MEI-FANG, ZHENG DE-JUAN. CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1992, 41(8): 1338-1344.
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ZHU MEI-FANG, ZONG JUN, ZHANG XIU-ZEN. THE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1991, 40(2): 253-261.
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1991, 40(10): 1677-1682.
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ZHANG FANG-QING, HE DE-YAN, SONG ZHI-ZHONG, KE NING, CHEN GUANG-HUA. BORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS. Acta Physica Sinica,
1990, 39(12): 1982-1988.
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ZHANG RUI-QIN, DAI GUO-CAI, GUAN DA-REN, CAI ZHENG-TING. GAP STATES DUE TO INTRINSIC DEFECTS IN a-Si:H. Acta Physica Sinica,
1989, 38(1): 163-169.
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. LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS. Acta Physica Sinica,
1989, 38(8): 1235-1244.
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DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING. A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica,
1989, 38(5): 829-833.
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WANG ZHI-CHAO, LIU XIANG-NA, FENG XIAO-MIE, GENG XI-SHENG. OPTICAL PROPERTIES OF THE a-Si:H/a-SiNx:H SUPERLATTICE FILMS. Acta Physica Sinica,
1988, 37(2): 189-196.
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WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE. THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica,
1988, 37(8): 1291-1297.
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WANG SHU-LIN, CHENG RU-GUANG. DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1988, 37(7): 1119-1123.
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CHEN GUANG-HUA, PENG YING-QUAN, CHEN JI-HONG. STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H. Acta Physica Sinica,
1987, 36(4): 524-528.
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WANG WAN-LU, LIAO KE-JUN. STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica,
1987, 36(12): 1529-1537.
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SU ZI-MIN, PENG SHAO-QI. DETERMINATION OF THE GAP STATE DISTRIBUTION IN a-Si:H BY THE METHOD OF INTERNAL PHOTOEMISSION TRANSIENT CURRENT TEMPERATURE SPECTROSCOPY. Acta Physica Sinica,
1986, 35(6): 731-740.
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HE YU-LIANG, YAN YONG-HONG. THE EFFECT OF CRYSTALLIZATION ON HYDROGEN CONTENTS AND BONDING STRUCTURE OF A-Si:H FILMS. Acta Physica Sinica,
1984, 33(10): 1472-1474.
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YAN CHENG. THE INFLUENCE OF THICKNESS, APPLIED ELECTRIC FIELD AND MEDIUM TEMPERATURE ANNEALING ON THE ACTIVATION ENERGIES FOR CONDUCTIVITY OF a-Si:H. Acta Physica Sinica,
1982, 31(12): 62-74.
doi: 10.7498/aps.31.62
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