THE MICROSTRUCTURE AND ITS HIGH-TEMPERATURE   ANNEALING BEHAVIOURS OF a-Si∶O∶H FILM

WANG YONG-QIAN; CHEN CHANG-YONG; CHEN WEI-DE; YANG FU-HUA; DIAO HONG-WEI; XU ZHEN-JIA; ZHANG SHI-BIN; KONG GUANG-LIN; LIAO XIAN-BO

doi:10.7498/aps.50.2418

Abstract
The microstructure and its annealing behaviours of a Si∶O∶H film prepared by PECVD are investigated in detail using micro Raman spectroscopy, X-ray photoelectron spectroscopy and Infrared absorption spectroscopy. The results indicate that the as deposited a-Si∶O∶H film is structural inhomogeneous, with Si-riched phases surrounded by O-riched phases. The Si-riched phases are found to be nonhydrogenated amorphous silicon (a-Si) clusters, and the O riched phases SiOx∶H ( x ≈1.35) are formed by random bonding of Si, O and H atoms. By high temperature annealing at 1150℃, the SiOx∶H ( x ≈1.35) matrix is shown to be transformed into SiO2 and SiOx (x ≈0.64), during which all of the hydrogen atoms in the film escape and some of silicon atoms are separated from the SiOx∶H ( x ≈1.35) matrix;The separated silicon atoms are found to be participated in the nucleation and growth processes of solid phase crystallization of the a Si-clusters, nano-crystalline silicon (nc-Si) is then formed. The microstructure of the annealed film is thereby described with a multi shell model, in which the nc- Si clusters are embedded in SiOx (x =0.64) and SiO2. The former is located at the boundaries of the nc-Si clusters, with a thickness comparable with the scale of nc-Si clusters, and forms the transition oxide layer between the nc-Si and the SiO2 matrix.

Keywords:
a-Si∶O∶H /

nc-Si /

microstructure /

annealing
Authors and contacts
WANG YONG-QIAN²,

CHEN CHANG-YONG²,

CHEN WEI-DE²,

YANG FU-HUA¹,

DIAO HONG-WEI²,

XU ZHEN-JIA²,

ZHANG SHI-BIN²,

KONG GUANG-LIN²,

LIAO XIAN-BO²

(1)中国科学院半导体研究所超晶格与微结构国家重点实验室,北京100083; (2)中国科学院半导体研究所凝聚态物理中心,表面物理国家重点实验室北京100083
References

Cited By

[1]	Yi Qi-Ru, Xiong Pei-Yu, Wang Huan-Hua, Li Gang, Wang Yun-Kai, Dong En-Yang, Chen Yu, Shen Zhi-Bang, Wu Yun, Yuan Jie, Jin Kui, Gao Chen. Microstructure study of YBa₂Cu₃O_7-δ thin film with synchrotron-based three-dimensional reciprocal space mapping. Acta Physica Sinica, 2023, 72(4): 046101. doi: 10.7498/aps.72.20221776
[2]	Liu Bao-Jian, Duan Wei-Bo, Li Da-Qi, Yu De-Ming, Chen Gang, Wang Tian-Hong, Liu Ding-Quan. Effect of annealing temperature on structure and stress properties of Ta₂O₅/SiO₂ multilayer reflective coatings. Acta Physica Sinica, 2019, 68(11): 114208. doi: 10.7498/aps.68.20182247
[3]	Zhang Jin-Shuai, Huang Qiu-Shi, Jiang Li, Qi Run-Ze, Yang Yang, Wang Feng-Li, Zhang Zhong, Wang Zhan-Shan. Stress and structure properties of X-ray W/Si multilayer under low temperature annealing. Acta Physica Sinica, 2016, 65(8): 086101. doi: 10.7498/aps.65.086101
[4]	Zhang Bin, Wang Wei-Li, Niu Qiao-Li, Zou Xian-Shao, Dong Jun, Zhang Yong. Effects of annealing in H2 atomsphere on optoelectronical properties of Nb-doped TiO2 thin films. Acta Physica Sinica, 2014, 63(6): 068102. doi: 10.7498/aps.63.068102
[5]	Xu Da-Qing, Zhang Yi-Men, Lou Yong-Le, Tong Jun. Influences of post-heat treatment on microstructures, optical and magnetic properties of unintentionally doped GaN epilayers implanted with Mn ions. Acta Physica Sinica, 2014, 63(4): 047501. doi: 10.7498/aps.63.047501
[6]	Gu Shan-Shan, Hu Xiao-Jun, Huang Kai. Effects of annealing temperature on the microstructure and p-type conduction of B-doped nanocrystalline diamond films. Acta Physica Sinica, 2013, 62(11): 118101. doi: 10.7498/aps.62.118101
[7]	Liu Min, Yu Hua, Zhang Pan, Zhang Ming, Liu Yan, Zhao Li-Juan. Effects of Al2O3 on micro-structure and crystallization of oxyfluoride glass. Acta Physica Sinica, 2012, 61(11): 118102. doi: 10.7498/aps.61.118102
[8]	Hu Heng, Hu Xiao-Jun, Bai Bo-Wen, Chen Xiao-Hu. Effects of annealing time on the microstructural and electrochemical properties of B-doped nanocrystalline diamond films. Acta Physica Sinica, 2012, 61(14): 148101. doi: 10.7498/aps.61.148101
[9]	Jia Quan-Jie, Chen Yu, Tian Xue-Yan, Yao Jiang-Feng, Zhao Su-Ling, Gong Wei, Fan Xing, Xu Zheng, Zhang Fu-Jun. Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors. Acta Physica Sinica, 2011, 60(5): 057201. doi: 10.7498/aps.60.057201
[10]	Luo Qing-Hong, Lou Yan-Zhi, Zhao Zhen-Ye, Yang Hui-Sheng. Effect of annealing on microstructure and mechanical propertiesof AlTiN multilayer coatings. Acta Physica Sinica, 2011, 60(6): 066201. doi: 10.7498/aps.60.066201
[11]	Zhang Zeng-Yuan, Gao Xiao-Yong, Feng Hong-Liang, Ma Jiao-Min, Lu Jing-Xiao. Effect of vacuum thermal-annealing temperatures on the microstructure and optical properties of single-phased Ag2O film. Acta Physica Sinica, 2011, 60(3): 036107. doi: 10.7498/aps.60.036107
[12]	Pan Jin-Ping, Hu Xiao-Jun, Lu Li-Ping, Yin Chi. Influence of annealing on the microstructure and electrochemical properties of B-doped nanocrystalline diamond films. Acta Physica Sinica, 2010, 59(10): 7410-7416. doi: 10.7498/aps.59.7410
[13]	Liu Xue-Qin, Han Guo-Jian, Huang Chun-Kui, Lan Wei. Thickness dependence of microstructure for La0.9Sr0.1MnO3/Si films determined by micro-Raman spectroscopy. Acta Physica Sinica, 2009, 58(11): 8008-8013. doi: 10.7498/aps.58.8008
[14]	Shang Shu-Zhen, Shao Jian-Da, Shen Jian, Yi Kui, Fan Zheng-Xiu. Effects of annealing on electron-beam evaporated 193nm Al2O3/MgF2 HR mirrors. Acta Physica Sinica, 2006, 55(5): 2639-2643. doi: 10.7498/aps.55.2639
[15]	Sun Cheng-Wei, Liu Zhi-Wen, Zhang Qing-Yu. Influence of annealing temperature on the microstructure and photoluminescence of ZnO films. Acta Physica Sinica, 2006, 55(1): 430-436. doi: 10.7498/aps.55.430
[16]	Fang Ze-Bo, Gong Heng-Xiang, Liu Xue-Qin, Xu Da-Yin, Huang Chun-Ming, Wang Yin-Yue. Effects of annealing on the structure and photoluminescence of ZnO films. Acta Physica Sinica, 2003, 52(7): 1748-1751. doi: 10.7498/aps.52.1748
[17]	Xu Yan-Yue, Kong Guang-Lin, Zhang Shi-Bin, Hu Zhi-Hua, Zeng Xiang-Bo, Diao Hong-Wei, Liao Xian-Bo. Preparation and characterization of the stable nc-Si/a-Si:H films. Acta Physica Sinica, 2003, 52(6): 1465-1468. doi: 10.7498/aps.52.1465
[18]	Chen Chang-Yong, Chen Wei-De, Wang Yong-Qian, Song Shu-Fang, Xu Zhen-Jia. Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films. Acta Physica Sinica, 2003, 52(3): 736-739. doi: 10.7498/aps.52.736
[19]	Wang Yong-Qian, Chen Wei-De, Chen Chang-Yong, Diao Hong-Wei, Zhang Shi-Ben, Xu Yan-Yue, Kong Guang-Lin, Liao Xian-Bo. . Acta Physica Sinica, 2002, 51(7): 1564-1570. doi: 10.7498/aps.51.1564
[20]	GUO DONG, CAI KAI, LI LONG-TU, GUI ZHI-LUN. ELECTRODEPOSITION OF DIAMOND-LIKE CARBON FILMS FROM ORGANIC SOLVENTS AND EFFECTS OF ANNEALING ON THE FILM STRUCTURE. Acta Physica Sinica, 2001, 50(12): 2413-2417. doi: 10.7498/aps.50.2413

Catalog

Vol. 50, Issue 12 - 2001-06-20

Metrics

Abstract views: 7549
PDF Downloads: 593
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

THE MICROSTRUCTURE AND ITS HIGH-TEMPERATURE ANNEALING BEHAVIOURS OF a-Si∶O∶H FILM

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

THE MICROSTRUCTURE AND ITS HIGH-TEMPERATURE ANNEALING BEHAVIOURS OF a-Si∶O∶H FILM

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About