[1] |
Ma Lei, Jiang Bing, Chen Yi-Hao, Shen Bo, Peng Ying-Cai. Structure and optical absorption of nc-Si:H/α-SiC:H multilayers. Acta Physica Sinica,
2014, 63(13): 136804.
doi: 10.7498/aps.63.136804
|
[2] |
Niu Hua-Lei, Li Xiao-Na, Hu Bing, Dong Chuang, Jiang Xin. Room-temperature photoluminescence analysis of nano-β-FeSi2/a-Si multilayer films. Acta Physica Sinica,
2009, 58(6): 4117-4122.
doi: 10.7498/aps.58.4117
|
[3] |
Wu Wen-Zhi, Yan Yu-Xi, Zheng Zhi-Ren, Jin Qin-Han, Liu Wei-Long, Zhang Jian-Ping, Yang Yan-Qiang, Su Wen-Hui. Steady-state and nanosecond time-resolved photoluminescence spectroscopies of aqueous CdTe quantum dots. Acta Physica Sinica,
2007, 56(5): 2926-2930.
doi: 10.7498/aps.56.2926
|
[4] |
Ma Zhong-Yuan, Huang Xin-Fan, Zhu Da, Li Wei, Chen Kun-Ji, Feng Duan. Photoluminescence from a-Si:H/SiO2 multilayers fabricated using in situ layer by layer plasma oxidation. Acta Physica Sinica,
2004, 53(8): 2746-2750.
doi: 10.7498/aps.53.2746
|
[5] |
TONG SONG, LIU XIANG-NA, GAO TING, YIN HAO, CHEN YI-JUN, BAO XI-MAO. INTENSE ULTRAVIOLET PHOTOLUMINESCENCE AT ROOM TEMPERATURE IN AS-DEPOSITED Si∶H∶O FILMS. Acta Physica Sinica,
1999, 48(2): 378-384.
doi: 10.7498/aps.48.378
|
[6] |
CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING. PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica,
1994, 43(11): 1847-1853.
doi: 10.7498/aps.43.1847
|
[7] |
DU KAI-YING, RAO HAI-BO. NUCLEATION MECHANISM OF THE SOLID PHASE CRY STALLIZATION OF a-Si:H FILMS CONTROLLED BY LIGHTLY DOPING IN LOW-TEMPE-RATURE ANNEALING. Acta Physica Sinica,
1994, 43(6): 966-972.
doi: 10.7498/aps.43.966
|
[8] |
CHEN GUANG-HUA, YAN SHAO-GUANG, ZHANG FANG-QING. A STUDY ON PHOTOLUMINESCENCE IN a-C:H FILMS. Acta Physica Sinica,
1992, 41(3): 500-505.
doi: 10.7498/aps.41.500
|
[9] |
WANG HONG, ZHU MEI-FANG, ZHENG DE-JUAN. CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1992, 41(8): 1338-1344.
doi: 10.7498/aps.41.1338
|
[10] |
ZHU MEI-FANG, ZONG JUN, ZHANG XIU-ZEN. THE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1991, 40(2): 253-261.
doi: 10.7498/aps.40.253
|
[11] |
WANG ZHI-CHAO, TENG MIN-KANG, LIU YIN-CHUN. ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT. Acta Physica Sinica,
1991, 40(12): 1973-1979.
doi: 10.7498/aps.40.1973
|
[12] |
. LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS. Acta Physica Sinica,
1989, 38(8): 1235-1244.
doi: 10.7498/aps.38.1235
|
[13] |
DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING. A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica,
1989, 38(5): 829-833.
doi: 10.7498/aps.38.829
|
[14] |
CHENG XING-KUI, ZHAO WEN-JIN, DAI GUO-CAI. ELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY. Acta Physica Sinica,
1988, 37(3): 481-484.
doi: 10.7498/aps.37.481
|
[15] |
WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE. THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica,
1988, 37(8): 1291-1297.
doi: 10.7498/aps.37.1291
|
[16] |
WANG ZHI-CHAO, LIU XIANG-NA, FENG XIAO-MIE, GENG XI-SHENG. OPTICAL PROPERTIES OF THE a-Si:H/a-SiNx:H SUPERLATTICE FILMS. Acta Physica Sinica,
1988, 37(2): 189-196.
doi: 10.7498/aps.37.189
|
[17] |
WANG SHU-LIN, CHENG RU-GUANG. DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1988, 37(7): 1119-1123.
doi: 10.7498/aps.37.1119
|
[18] |
WANG WAN-LU, LIAO KE-JUN. STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica,
1987, 36(12): 1529-1537.
doi: 10.7498/aps.36.1529
|
[19] |
MA HONG-LEI, ZHOU YU-FANG, LI DUN-YIN. EFFECTS OF BONDED HYDROGEN ON THE PHOTOLUMINESCENCE PROPERTIES OF GD a-Si:H THIN FILMS. Acta Physica Sinica,
1986, 35(6): 725-730.
doi: 10.7498/aps.35.725
|
[20] |
HE YU-LIANG, YAN YONG-HONG. THE EFFECT OF CRYSTALLIZATION ON HYDROGEN CONTENTS AND BONDING STRUCTURE OF A-Si:H FILMS. Acta Physica Sinica,
1984, 33(10): 1472-1474.
doi: 10.7498/aps.33.1472
|