| [1] |
Zhai Shi-Ming, Liao Huang-Sheng, Zhou Nai-Gen, Huang Hai-Bin, Zhou Lang. Atomic simulation of SiyHx structure configuration in a-Si:H thin films. Acta Physica Sinica,
2020, 69(7): 076801.
doi: 10.7498/aps.69.20191275
|
| [2] |
Chen Jun-Fan, Ren Hui-Zhi, Hou Fu-Hua, Zhou Zhong-Xin, Ren Qian-Shang, Zhang De-Kun, Wei Chang-Chun, Zhang Xiao-Dan, Hou Guo-Fu, Zhao Ying. Passivation optimization and performance improvement of planar a-Si:H/c-Si heterojunction cells in perovskite/silicon tandem solar cells. Acta Physica Sinica,
2019, 68(2): 028101.
doi: 10.7498/aps.68.20181759
|
| [3] |
Zhong Chun-Liang, Geng Kui-Wei, Yao Ruo-He. S-shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell. Acta Physica Sinica,
2010, 59(9): 6538-6544.
doi: 10.7498/aps.59.6538
|
| [4] |
Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men, Wang Yue-Hu, Guo Hui. Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layer. Acta Physica Sinica,
2010, 59(5): 3542-3546.
doi: 10.7498/aps.59.3542
|
| [5] |
Liu Bo, Tang Wen-Jin, Song Zhong-Xiao, Chen Ya-Shao, Xu Ke-Wei. Effect of N-doping on the microstructure and properties of amorphous SiC:H diffusion barrier films. Acta Physica Sinica,
2009, 58(3): 2042-2048.
doi: 10.7498/aps.58.2042
|
| [6] |
Hu Zhi-Hua, Liao Xian-Bo, Zeng Xiang-Bo, Xu Yan-Yue, Zhang Shi-Bin, Diao Hong-Wei, Kong Guang-Lin. Numerical simulation of nc-Si:H/ c-Si heterojunction solar cells. Acta Physica Sinica,
2003, 52(1): 217-224.
doi: 10.7498/aps.52.217
|
| [7] |
PENG YING-CAI, XU GANG-YI, HE YU-LIANG, LIU MING, LI YUE-XIA. CARRIER TRANSPORT PROPERTIES OF THE (n)nc-Si:H/(p)c-Si HETEROJUNCTION. Acta Physica Sinica,
2000, 49(12): 2466-2471.
doi: 10.7498/aps.49.2466
|
| [8] |
DU KAI-YING, RAO HAI-BO. NUCLEATION MECHANISM OF THE SOLID PHASE CRY STALLIZATION OF a-Si:H FILMS CONTROLLED BY LIGHTLY DOPING IN LOW-TEMPE-RATURE ANNEALING. Acta Physica Sinica,
1994, 43(6): 966-972.
doi: 10.7498/aps.43.966
|
| [9] |
CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING. PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica,
1994, 43(11): 1847-1853.
doi: 10.7498/aps.43.1847
|
| [10] |
WANG ZHI-CHAO, TENG MIN-KANG, LIU YIN-CHUN. ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT. Acta Physica Sinica,
1991, 40(12): 1973-1979.
doi: 10.7498/aps.40.1973
|
| [11] |
. LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS. Acta Physica Sinica,
1989, 38(8): 1235-1244.
doi: 10.7498/aps.38.1235
|
| [12] |
DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING. A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica,
1989, 38(5): 829-833.
doi: 10.7498/aps.38.829
|
| [13] |
ZHANG RUI-QIN, DAI GUO-CAI, GUAN DA-REN, CAI ZHENG-TING. GAP STATES DUE TO INTRINSIC DEFECTS IN a-Si:H. Acta Physica Sinica,
1989, 38(1): 163-169.
doi: 10.7498/aps.38.163
|
| [14] |
CHENG XING-KUI, ZHAO WEN-JIN, DAI GUO-CAI. ELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY. Acta Physica Sinica,
1988, 37(3): 481-484.
doi: 10.7498/aps.37.481
|
| [15] |
WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE. THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica,
1988, 37(8): 1291-1297.
doi: 10.7498/aps.37.1291
|
| [16] |
WANG SHU-LIN, CHENG RU-GUANG. DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1988, 37(7): 1119-1123.
doi: 10.7498/aps.37.1119
|
| [17] |
CHEN GUANG-HUA, PENG YING-QUAN, CHEN JI-HONG. STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H. Acta Physica Sinica,
1987, 36(4): 524-528.
doi: 10.7498/aps.36.524
|
| [18] |
WANG WAN-LU, LIAO KE-JUN. STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica,
1987, 36(12): 1529-1537.
doi: 10.7498/aps.36.1529
|
| [19] |
WU DAO-HUAI, YE JIAN-MING, PAN HUI-YING, CHENG RU-GUANG. PHOTO-INDUCED DEGRADATION OF UNDOPED AMORPHOUS SILICON HYDRIDE PREPARED BY D. C. GLOW-DISCHARGE DEPOSITION TECHNIQUE. Acta Physica Sinica,
1985, 34(2): 253-258.
doi: 10.7498/aps.34.253
|
| [20] |
HE YU-LIANG, YAN YONG-HONG. THE EFFECT OF CRYSTALLIZATION ON HYDROGEN CONTENTS AND BONDING STRUCTURE OF A-Si:H FILMS. Acta Physica Sinica,
1984, 33(10): 1472-1474.
doi: 10.7498/aps.33.1472
|
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