| [1] |
Liu Ying, Guo Si-Lin, Zhang Yong, Yang Peng, Lyu Ke-Hong, Qiu Jing, Liu Guan-Jun. Review on 1/f noise and its research progress in two-dimensional material graphene. Acta Physica Sinica,
2023, 72(1): 017302.
doi: 10.7498/aps.72.20221253
|
| [2] |
Huang Jun-Chao, Wang Ling-Ke, Duan Yi-Fei, Huang Ya-Feng, Liu Liang, Li Tang. Experimental study on 1/f intrinsic thermal noise in optical fibers. Acta Physica Sinica,
2019, 68(5): 054205.
doi: 10.7498/aps.68.20181838
|
| [3] |
Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei. Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica,
2015, 64(13): 136104.
doi: 10.7498/aps.64.136104
|
| [4] |
Liu Yu-An, Zhuang Yi-Qi, Du Lei, Su Ya-Hui. 1/f noise characterization gamma irradiation of GaN-based blue light-emitting diode. Acta Physica Sinica,
2013, 62(14): 140703.
doi: 10.7498/aps.62.140703
|
| [5] |
Chen Hai-Peng, Cao Jun-Sheng, Guo Shu-Xu. Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser. Acta Physica Sinica,
2013, 62(10): 104209.
doi: 10.7498/aps.62.104209
|
| [6] |
Li Yang, Guo Shu-Xu. A new method to estimate the parameter of 1/f Noise of high power semiconductor laser diode based on sparse decomposition. Acta Physica Sinica,
2012, 61(3): 034208.
doi: 10.7498/aps.61.034208
|
| [7] |
Li Xin-Mei, Ruan Ya-Ping, Zhong Zhi-Ping. Theoretical study of the Rydberg series energy levels of ns2S1/2,np2P1/2,3/2, nd2D3/2,5/2 and nf2F5/2,7/2 for alkali-metal Li, Na, K, Rb, Cs and Fr. Acta Physica Sinica,
2012, 61(2): 023104.
doi: 10.7498/aps.61.023104
|
| [8] |
Sun Peng, Du Lei, He Liang, Chen Wen-Hao, Liu Yu-Dong, Zhao Ying. Radiation degradation mechanism of pn-junction diode based on 1/f noise variation. Acta Physica Sinica,
2012, 61(12): 127808.
doi: 10.7498/aps.61.127808
|
| [9] |
Wu Shao-Bing, Chen Shi, Li Hai, Yang Xiao-Fei. Researching progress of the 1/f noise in TMR and GMR sensors. Acta Physica Sinica,
2012, 61(9): 097504.
doi: 10.7498/aps.61.097504
|
| [10] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica,
2012, 61(6): 067801.
doi: 10.7498/aps.61.067801
|
| [11] |
Bao Jun-Lin, Lin Li-Yan, He Liang, Du Lei. Noise as a characteriscic for current transmitting rateof optoelectronic coupled devicesfor ionization radiation damage. Acta Physica Sinica,
2011, 60(4): 047202.
doi: 10.7498/aps.60.047202
|
| [12] |
Dai Yu, Zhang Jian-Xun. Reduction of 1/f noise in semiconductor devices based on wavelet transform and Wiener filter. Acta Physica Sinica,
2011, 60(11): 110516.
doi: 10.7498/aps.60.110516
|
| [13] |
Zhang Zhen-Guo, Gao Feng-Li, Guo Shu-Xu, Li Xue-Yan, Yu Si-Yao. A novel method to estimate the parameters of 1/f noise of semiconductor laser diodes. Acta Physica Sinica,
2009, 58(4): 2772-2775.
doi: 10.7498/aps.58.2772
|
| [14] |
Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang. The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica,
2008, 57(9): 5869-5874.
doi: 10.7498/aps.57.5869
|
| [15] |
Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica,
2008, 57(8): 5205-5211.
doi: 10.7498/aps.57.5205
|
| [16] |
Liu Yu-An, Du Lei, Bao Jun-Lin. Research on correlation of 1/fγ noise and hot carrier degradation in metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2008, 57(4): 2468-2475.
doi: 10.7498/aps.57.2468
|
| [17] |
Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin. A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica,
2007, 56(6): 3400-3406.
doi: 10.7498/aps.56.3400
|
| [18] |
Bao Jun-Lin, Zhuang Yi-Qi, Du Lei, Li Wei-Hua, Wan Chang-Xing, Zhang Ping. A unified model for 1/f noise in n-channel and p-channel MOSFETs. Acta Physica Sinica,
2005, 54(5): 2118-2122.
doi: 10.7498/aps.54.2118
|
| [19] |
Sun Tao, Chen Xing-Guo, Hu Xiao-Ning, Li Yan-Jin. Analysis of surface leakage and 1/f noise on long-wavelength infrared HgCdTe photodiodes. Acta Physica Sinica,
2005, 54(7): 3357-3362.
doi: 10.7498/aps.54.3357
|
| [20] |
Du Lei, Zhuang Yi-Qi, Xue Li-Jun. Ａｕｎｉｆｉｅｄｍｏｄｅｌｆｏｒ 1 ｆｎｏｉｓｅａｎｄ 1 ｆ2 ｎｏｉｓｅｄｕｅｔｏｅｌｅｃｔｒｏｍｉｇｒａｔｉｏｎｉｎｍｅｔａｌｆｉｌｍ. Acta Physica Sinica,
2002, 51(12): 2836-2841.
doi: 10.7498/aps.51.2836
|
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