基于版图优化的综合灵敏度模型

王俊平; 戚苏阳; 刘士钢

doi:10.7498/aps.63.128503

摘要

随着集成电路规模的不断扩大和器件特征尺寸的不断缩减，保持和改善集成电路的制造成品率成为优化电路设计和制造工艺研究的热点. 为了减少由冗余物缺陷和丢失物缺陷所引起的成品率损失，选择优先优化的线网成为版图优化过程中的一个重要课题. 基于关键面积减小的版图优化是提高集成电路成品率的一种有效途径. 本文提出了一种新的短路、开路灵敏度模型，该模型以线网为单位，反映了单位线网上该线网与周围线网间的短路关键面积和自身开路关键面积的大小. 由于本文的灵敏度模型是关于单一线网的，同时又包含候选线网周围线网的信息，因此，在优化时可以同时减少候选线网与周围线网之间的短路关键面积以及线网本身的开路关键面积，提高了版图优化的效率. 实验结果表明，该灵敏度模型可作为版图优化中线网位置选择的依据.

关键词:

Abstract

To maintain and improve the manufacturing yield of integrated circuit becomes a research hot spot in optimized circuit design and manufacturing technology, with the expansion of the integrated circuit scale and shrinkage of devices feature sizes. In order to reduce the yield loss caused by redundancy material defect and missing material defect, choosing a preferentially optimizing net becomes an important subject in the process of layout optimization. Layout optimization is an effective way to increase integrated circuit yield which is based on the critical area diminution. In the paper presented is a new kind of short circuit and open circuit sensitivity model, which is net-based and not only reflects the size of the short critical area between the single net and the nets around it, but also possesses open critical area. Because this model is based on single net and includes the information about the surrounding net, the short critical area between the single net and the net around it and the open critical area of its own can be reduced at the same time. In this way, the efficiency of layout optimization is enhanced. According to the experimental results, this sensitivity model can be used to choose the position for optimization.

Keywords:

作者及机构信息

1.
西安电子科技大学通信工程学院, 西安 710071;

2.
西安电子科技大学微电子学院, 西安 710071

基金项目: 国家自然科学基金（批准号：61173088，61373172）和西安市产业技术创新计划（批准号：CX12485）资助的课题.

Authors and contacts

1.
School of Communication Engineering, Xidian University, Xi'an 710071, China;

2.
School of Microelectronics, Xidian University, Xi'an 710071, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61173088, 61373172) and the Industry Technology Innovation Program of Xi'an, China (Grant No. CX12485).

参考文献

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[2]	Raghvendra S, Hurat, Philippe 2005 The 18th International Conference on VLSI Design California, USA, January 3-7, 2005 p705
[3]	Tian X B, Xu H, Li Q J 2013 Chin. Phys. B 22 088502
[4]	Fang X D, Tang Y H, Wu J J, Zhu X, Zhou J, Huang D 2013 Chin. Phys. B 22 078901
[5]	Fang X D, Tang Y H, Wu J J 2012 Chin. Phys. B 21 098901
[6]	Muller D 2006 IEEE/ACM International Conference on Computer-Aided Design San Jose CA, November 5-9, 2006 p480
[7]	Minsik C, Hua X, Ruri R, Pan D Z 2008 IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 27 p872
[8]	Zhu Z M, Li R, Hao B T, Yang Y T 2009 Chin. Phys. B 18 4995
[9]	Zhu Z M, Qian L B, Yang Y T 2009 Chin. Phys. B 18 1188
[10]	Wang J P, Hao Y, Zhang J M 2007 Chin. Phys. 16 1796
[11]	Wang J P, Hao Y 2006 Chin. Phys. 15 1621
[12]	Ge J, Jin Z, Su Y B, Cheng W, Liu X Y, Wu D X 2009 Acta. Phys. Sin. 58 8584 (in Chinese) [葛霁, 金智, 苏永波, 程伟, 刘新宇, 吴德馨 2009 58 8584]
[13]	Cai D L, Song Z T, Li X, Chen H P, Chen X G 2011 Chin. Phys. Lett. 28 018501
[14]	Pan D Z, Minsik C, Kun Y, Ban Y C 2008 The 9th International Conference on Solid-State and Integrated-Circuit Technology Beijing, China, October 20-23 2008, p2232
[15]	Li X, Song Z T, Cai D L, Chen X G, Jia X L 2009 Chin. Phys. Lett. 26 128501
[16]	Ding S, Song Z T, Liu B, Zhu M, Chen X T, Chen Y F, Shen J, Fu C, Feng S L 2008 Chin. Phys. Lett. 25 3815
[17]	Ghaida R S, Doniger K, Zarkesh H P 2009 IEEE Trans. Semicond. Manufact. 22 329
[18]	Li X, Song Z T, Cai D L, Chen X G, Jia X L 2009 Chin. Phys. Lett. 26 128501
[19]	Ding S, Song Z T, Liu B, Zhu M, Chen X T, Chen Y F, Shen J, Fu C, Feng S L 2008 Chin. Phys. Lett. 25 3815
[20]	Wang J P, Hao Y 2009 Acta Phys. Sin. 58 4267 (in Chinese) [王俊平, 郝跃 2009 58 4267]
[21]	Wang J P, Hao Y 2005 Chin. J. Semicond. 26 1514
[22]	Pan D Z, Minsik C, Kun Y 2010 Foundations and Trends in Electronic Design Automation 4 1
[23]	Pan D Z, Minsik C, Kun Y, Ban Y C 2008 The 9th International Conference on Solid-State and Integrated-Circuit Technology Beijing, China, October 20-23, 2008 p2232
[24]	Liu S G, Wang J P, Su Y B, Wang L 2012 Chin. Phys. B 21 098503
[25]	Wang J P, Ning P Wang L Su Y B, Liu S G, Wan G T, Wang S 2010 Open NSO Modeling for DFM 2nd International Conference on Information Engineering and Computer Science-Proceedings Wuhan, China, December 25-26, 2010 p1

施引文献

[1]	Chiang C, Kawa J 2006 IEEE Asia Pacific Conference on Circuits and Systems Singapore, December 4-7, 2006 p1099
[2]	Raghvendra S, Hurat, Philippe 2005 The 18th International Conference on VLSI Design California, USA, January 3-7, 2005 p705
[3]	Tian X B, Xu H, Li Q J 2013 Chin. Phys. B 22 088502
[4]	Fang X D, Tang Y H, Wu J J, Zhu X, Zhou J, Huang D 2013 Chin. Phys. B 22 078901
[5]	Fang X D, Tang Y H, Wu J J 2012 Chin. Phys. B 21 098901
[6]	Muller D 2006 IEEE/ACM International Conference on Computer-Aided Design San Jose CA, November 5-9, 2006 p480
[7]	Minsik C, Hua X, Ruri R, Pan D Z 2008 IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 27 p872
[8]	Zhu Z M, Li R, Hao B T, Yang Y T 2009 Chin. Phys. B 18 4995
[9]	Zhu Z M, Qian L B, Yang Y T 2009 Chin. Phys. B 18 1188
[10]	Wang J P, Hao Y, Zhang J M 2007 Chin. Phys. 16 1796
[11]	Wang J P, Hao Y 2006 Chin. Phys. 15 1621
[12]	Ge J, Jin Z, Su Y B, Cheng W, Liu X Y, Wu D X 2009 Acta. Phys. Sin. 58 8584 (in Chinese) [葛霁, 金智, 苏永波, 程伟, 刘新宇, 吴德馨 2009 58 8584]
[13]	Cai D L, Song Z T, Li X, Chen H P, Chen X G 2011 Chin. Phys. Lett. 28 018501
[14]	Pan D Z, Minsik C, Kun Y, Ban Y C 2008 The 9th International Conference on Solid-State and Integrated-Circuit Technology Beijing, China, October 20-23 2008, p2232
[15]	Li X, Song Z T, Cai D L, Chen X G, Jia X L 2009 Chin. Phys. Lett. 26 128501
[16]	Ding S, Song Z T, Liu B, Zhu M, Chen X T, Chen Y F, Shen J, Fu C, Feng S L 2008 Chin. Phys. Lett. 25 3815
[17]	Ghaida R S, Doniger K, Zarkesh H P 2009 IEEE Trans. Semicond. Manufact. 22 329
[18]	Li X, Song Z T, Cai D L, Chen X G, Jia X L 2009 Chin. Phys. Lett. 26 128501
[19]	Ding S, Song Z T, Liu B, Zhu M, Chen X T, Chen Y F, Shen J, Fu C, Feng S L 2008 Chin. Phys. Lett. 25 3815
[20]	Wang J P, Hao Y 2009 Acta Phys. Sin. 58 4267 (in Chinese) [王俊平, 郝跃 2009 58 4267]
[21]	Wang J P, Hao Y 2005 Chin. J. Semicond. 26 1514
[22]	Pan D Z, Minsik C, Kun Y 2010 Foundations and Trends in Electronic Design Automation 4 1
[23]	Pan D Z, Minsik C, Kun Y, Ban Y C 2008 The 9th International Conference on Solid-State and Integrated-Circuit Technology Beijing, China, October 20-23, 2008 p2232
[24]	Liu S G, Wang J P, Su Y B, Wang L 2012 Chin. Phys. B 21 098503
[25]	Wang J P, Ning P Wang L Su Y B, Liu S G, Wan G T, Wang S 2010 Open NSO Modeling for DFM 2nd International Conference on Information Engineering and Computer Science-Proceedings Wuhan, China, December 25-26, 2010 p1

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