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In order to improve the contradictory between Specific On-resistance (Ron,sp) and Breakdown voltage (BV) of LDMOS, and enhance the turn-off characteristic, this paper proposes a novel LDMOS device with dual-drift regions and dual-conduction paths, which achieves an ultra-low Ron,sp. The key feature of the proposed device is the introduction of a dual-drift region structure with alternating P-type and N-type regions, along with the incorporation of planar and trench gates to control the P-type and N-type drift regions, respectively. This configuration enables the formation of two independent electron conduction paths within the drift region. When a positive voltage is applied to the planar gate, a voltage difference generated between the surface of the P-type drift region and the body of device’s drift. Thereby, under the impact of the voltage difference, the electrons are pulled to the surface of the P-type drift region to inverts and forms a high-density electron inversion layer that connects the channel and the N+ drain, which significantly increases the electron density during conduction and reduces the Ron,sp. The introduction of the trench gate provides an additional electron disappearance path, which shortens the device's turn-off time (toff). Furthermore, the introduction of the P-type drift region facilitates the recombination of electrons with holes within the P-type drift region, accelerating the electron disappearance process and further reducing the device'stoff. What’s more, the proposed device exhibits a more uniform electric field distribution and higher voltage capability is due to the P+N-N+P+ structure adopted in the PolySi-top layer. During the off-state, each of the P+N- junction and the N+P+ junction generate an electric field peak at the interface, which modulates the electric field distribution on the surface of the drift region. Simulation results indicate that at a Breakdown Voltage (BV) level of 200V, the proposed LDMOS exhibits a Ron,sp of 3.43 mΩ·cm² and a toff of 9 ns. Compared to conventional LDMOS devices, there is a 90% reduction in Ron,sp and an 11.6% decrease in toff. The proposed device not only achieves an excellent trade-off between Ron,sp and BV but also shortens the toff, demonstrating the device achieved superior performance.
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Keywords:
- Dual-drift /
- Dual-conduction paths /
- Specific on-resistance /
- Breakdown voltage
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