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In this paper, a new REBULF (reduced BULk field) SJ-LDMOS (lateral double-diffused MOSFET) is proposed with the N type buffered layer based on the buffered SJ-LDMOS for the low loss of LDMOS used in the power integrated circuits. In this structure, the problem of the substrate-assisted depletion, produced due to the P-type substrate for the N-channel SJ-LDMOS, is eliminated by the N-type buffered layer. The charges for the N-type and P-type pillars are depleted completely. Moreover, a new electric field peak is introduced into the surface electric field distribution, which makes the lateral surface electric field uniform. The breakdown voltage is improved for the REBULF SJ-LDMOS in virtue of the ISE simulation results. By optimizing the location and parameters of the N-type buried layer, the breakdown voltage of REBULF SJ-LDMOS is increased by about 49% compared with that of the conventional LDMOS, and improved by about 30% compared with that of the buffered SJ-LDMOS.
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Keywords:
- lateral double-diffused MOSFET /
- super junction /
- breakdown voltage /
- surface electric field
[1] Kyungho L, Haeung J, Byunghee C, Joonhee C, Pang Y S, Jinwoo M, Susanna K 2013 Proceedings of the 25th International Power Semiconductor Devices and ICs Kanazawa, May 26-30, 2013 p163
[2] Yoshiaki T, Katakura H, Takatoshi O, Masanobu I, Hitoshi S 2013 Proceedings of the 25th International Power Semiconductor Devices and ICs Kanazawa, May 26-30, 2013 p145
[3] Chang H, Jung J, Kim M H, Lee E K, Jang D E, Park J S, Jung J H, Yoon C J, Bea S R, Park C H 2012 Proceedings of the 24th International Power Semiconductor Devices and ICs Bruges, Belgium, June 3-7, 2012 p217
[4] Duan B X, Yang Y T 2012 Chin. Phys. B 21 057201
[5] Zhang X J, Yang Y T, Duan B X, Chen B, Chai C C, Song K 2012 Chin. Phys. B 21 017201
[6] Zhang X J, Yang Y T, Duan B X, Chai C C, Song K, Chen B 2012 Chin. Phys. B 21 037303
[7] Sameh G, Khalil N, Salama C A T 2003 IEEE Trans. Electron Dev. 50 1385
[8] Sameh G, Khalil N, Li Z H, Salama C A T 2004 IEEE Trans. Electron Dev. 51 1185
[9] Park Y, Salama C T 2005 Proceedings of the 17th International Power Semiconductor Devices and ICs Santa Barbara, California, May 26-30, 2005 p163
[10] Zhang B, Chen L, Wu J, Li Z J 2005 International Conference on Communications, Circuits and System Hongkong, May 16-20, 2005 p1399
[11] Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Dev. Lett. 30 305
[12] Duan B X, Yang Y T 2011 Micro Nano Lett. 6 881
[13] Duan B X, Zhang B, Li Z J 2007 Chin. J. Semicond. 28 166
[14] Chen J B, Zhang B, Li Z J 2008 IEEE Electron Dev. Lett. 29 645
[15] Duan B X, Zhang B, Li Z J 2005 Solid-State Electron. 49 1965
[16] Duan B X, Zhang B, Li Z J 2006 IEEE Electron Dev. Lett. 27 377
[17] Duan B X, Zhang B, Li Z J 2007 Chin. Phys. Lett. 24 1342
[18] Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Dev. Lett. 30 1329
[19] Duan B X, Yang Y T, Zhang B, Li Z J 2008 Chin. J. Semicond. 29 677
[20] Duan B X, Yang Y T 2011 IEEE Trans. Electron Dev. 58 2057
[21] Duan B X, Yang Y T, Zhang B 2010 Solid-State Electron. 54 685
[22] Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 247302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 247302]
[23] Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 227302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 227302]
[24] Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 057302 (in Chinese) [段宝兴, 杨银堂 2014 63 057302]
[25] ISE TCAD Manuals, release 10.0
[26] Chen X B, Wang X, Johnny K O S 2000 IEEE Trans. Electron Dev. 47 1280
[27] Chen X B, Johnny K O S 2001 IEEE Trans. Electron Dev. 48 344
[28] Appels J A, Collet M G, Hart P A H, Vaes H M J 1980 Philips J. Res. 35 1
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[1] Kyungho L, Haeung J, Byunghee C, Joonhee C, Pang Y S, Jinwoo M, Susanna K 2013 Proceedings of the 25th International Power Semiconductor Devices and ICs Kanazawa, May 26-30, 2013 p163
[2] Yoshiaki T, Katakura H, Takatoshi O, Masanobu I, Hitoshi S 2013 Proceedings of the 25th International Power Semiconductor Devices and ICs Kanazawa, May 26-30, 2013 p145
[3] Chang H, Jung J, Kim M H, Lee E K, Jang D E, Park J S, Jung J H, Yoon C J, Bea S R, Park C H 2012 Proceedings of the 24th International Power Semiconductor Devices and ICs Bruges, Belgium, June 3-7, 2012 p217
[4] Duan B X, Yang Y T 2012 Chin. Phys. B 21 057201
[5] Zhang X J, Yang Y T, Duan B X, Chen B, Chai C C, Song K 2012 Chin. Phys. B 21 017201
[6] Zhang X J, Yang Y T, Duan B X, Chai C C, Song K, Chen B 2012 Chin. Phys. B 21 037303
[7] Sameh G, Khalil N, Salama C A T 2003 IEEE Trans. Electron Dev. 50 1385
[8] Sameh G, Khalil N, Li Z H, Salama C A T 2004 IEEE Trans. Electron Dev. 51 1185
[9] Park Y, Salama C T 2005 Proceedings of the 17th International Power Semiconductor Devices and ICs Santa Barbara, California, May 26-30, 2005 p163
[10] Zhang B, Chen L, Wu J, Li Z J 2005 International Conference on Communications, Circuits and System Hongkong, May 16-20, 2005 p1399
[11] Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Dev. Lett. 30 305
[12] Duan B X, Yang Y T 2011 Micro Nano Lett. 6 881
[13] Duan B X, Zhang B, Li Z J 2007 Chin. J. Semicond. 28 166
[14] Chen J B, Zhang B, Li Z J 2008 IEEE Electron Dev. Lett. 29 645
[15] Duan B X, Zhang B, Li Z J 2005 Solid-State Electron. 49 1965
[16] Duan B X, Zhang B, Li Z J 2006 IEEE Electron Dev. Lett. 27 377
[17] Duan B X, Zhang B, Li Z J 2007 Chin. Phys. Lett. 24 1342
[18] Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Dev. Lett. 30 1329
[19] Duan B X, Yang Y T, Zhang B, Li Z J 2008 Chin. J. Semicond. 29 677
[20] Duan B X, Yang Y T 2011 IEEE Trans. Electron Dev. 58 2057
[21] Duan B X, Yang Y T, Zhang B 2010 Solid-State Electron. 54 685
[22] Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 247302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 247302]
[23] Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 227302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 227302]
[24] Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 057302 (in Chinese) [段宝兴, 杨银堂 2014 63 057302]
[25] ISE TCAD Manuals, release 10.0
[26] Chen X B, Wang X, Johnny K O S 2000 IEEE Trans. Electron Dev. 47 1280
[27] Chen X B, Johnny K O S 2001 IEEE Trans. Electron Dev. 48 344
[28] Appels J A, Collet M G, Hart P A H, Vaes H M J 1980 Philips J. Res. 35 1
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