具有N型缓冲层REBULF Super Junction LDMOS

段宝兴; 曹震; 袁小宁; 杨银堂

doi:10.7498/aps.63.227302

摘要

针对功率集成电路对低损耗LDMOS (lateral double-diffused MOSFET)类器件的要求,在N型缓冲层super junction LDMOS (buffered SJ-LDMOS)结构基础上, 提出了一种具有N型缓冲层的REBULF (reduced BULk field) super junction LDMOS结构. 这种结构不但消除了N沟道SJ-LDMOS由于P型衬底带来的衬底辅助耗尽效应问题, 使super junction的N区和P区电荷完全补偿, 而且同时利用REBULF的部分N型缓冲层电场调制效应, 在表面电场分布中引入新的电场峰而使横向表面电场分布均匀, 提高了器件的击穿电压. 通过优化部分N型埋层的位置和参数, 利用仿真软件ISE分析表明, 新型REBULF SJ-LDMOS 的击穿电压较一般LDMOS提高了49%左右, 较文献提出的buffered SJ-LDMOS结构提高了30%左右.

关键词:

Abstract

In this paper, a new REBULF (reduced BULk field) SJ-LDMOS (lateral double-diffused MOSFET) is proposed with the N type buffered layer based on the buffered SJ-LDMOS for the low loss of LDMOS used in the power integrated circuits. In this structure, the problem of the substrate-assisted depletion, produced due to the P-type substrate for the N-channel SJ-LDMOS, is eliminated by the N-type buffered layer. The charges for the N-type and P-type pillars are depleted completely. Moreover, a new electric field peak is introduced into the surface electric field distribution, which makes the lateral surface electric field uniform. The breakdown voltage is improved for the REBULF SJ-LDMOS in virtue of the ISE simulation results. By optimizing the location and parameters of the N-type buried layer, the breakdown voltage of REBULF SJ-LDMOS is increased by about 49% compared with that of the conventional LDMOS, and improved by about 30% compared with that of the buffered SJ-LDMOS.

Keywords:

作者及机构信息

1.
西安电子科技大学微电子学院, 宽禁带半导体材料与器件教育部重点实验室, 西安 710071

基金项目: 国家重点基础研究发展计划(批准号:2014CB339900)、国家自然科学基金重点项目(批准号:61234006)和国家自然科学基金重点项目(批准号:61334002)资助的课题.

Authors and contacts

1.
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Funds: Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), the Key Program of the National Natural Science Foundation of China (Grant Nos. 61234006, 61334002).

参考文献

[1]	Kyungho L, Haeung J, Byunghee C, Joonhee C, Pang Y S, Jinwoo M, Susanna K 2013 Proceedings of the 25th International Power Semiconductor Devices and ICs Kanazawa, May 26-30, 2013 p163
[2]	Yoshiaki T, Katakura H, Takatoshi O, Masanobu I, Hitoshi S 2013 Proceedings of the 25th International Power Semiconductor Devices and ICs Kanazawa, May 26-30, 2013 p145
[3]	Chang H, Jung J, Kim M H, Lee E K, Jang D E, Park J S, Jung J H, Yoon C J, Bea S R, Park C H 2012 Proceedings of the 24th International Power Semiconductor Devices and ICs Bruges, Belgium, June 3-7, 2012 p217
[4]	Duan B X, Yang Y T 2012 Chin. Phys. B 21 057201
[5]	Zhang X J, Yang Y T, Duan B X, Chen B, Chai C C, Song K 2012 Chin. Phys. B 21 017201
[6]	Zhang X J, Yang Y T, Duan B X, Chai C C, Song K, Chen B 2012 Chin. Phys. B 21 037303
[7]	Sameh G, Khalil N, Salama C A T 2003 IEEE Trans. Electron Dev. 50 1385
[8]	Sameh G, Khalil N, Li Z H, Salama C A T 2004 IEEE Trans. Electron Dev. 51 1185
[9]	Park Y, Salama C T 2005 Proceedings of the 17th International Power Semiconductor Devices and ICs Santa Barbara, California, May 26-30, 2005 p163
[10]	Zhang B, Chen L, Wu J, Li Z J 2005 International Conference on Communications, Circuits and System Hongkong, May 16-20, 2005 p1399
[11]	Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Dev. Lett. 30 305
[12]	Duan B X, Yang Y T 2011 Micro Nano Lett. 6 881
[13]	Duan B X, Zhang B, Li Z J 2007 Chin. J. Semicond. 28 166
[14]	Chen J B, Zhang B, Li Z J 2008 IEEE Electron Dev. Lett. 29 645
[15]	Duan B X, Zhang B, Li Z J 2005 Solid-State Electron. 49 1965
[16]	Duan B X, Zhang B, Li Z J 2006 IEEE Electron Dev. Lett. 27 377
[17]	Duan B X, Zhang B, Li Z J 2007 Chin. Phys. Lett. 24 1342
[18]	Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Dev. Lett. 30 1329
[19]	Duan B X, Yang Y T, Zhang B, Li Z J 2008 Chin. J. Semicond. 29 677
[20]	Duan B X, Yang Y T 2011 IEEE Trans. Electron Dev. 58 2057
[21]	Duan B X, Yang Y T, Zhang B 2010 Solid-State Electron. 54 685
[22]	Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 247302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 247302]
[23]	Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 227302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 227302]
[24]	Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 057302 (in Chinese) [段宝兴, 杨银堂 2014 63 057302]
[25]	ISE TCAD Manuals, release 10.0
[26]	Chen X B, Wang X, Johnny K O S 2000 IEEE Trans. Electron Dev. 47 1280
[27]	Chen X B, Johnny K O S 2001 IEEE Trans. Electron Dev. 48 344
[28]	Appels J A, Collet M G, Hart P A H, Vaes H M J 1980 Philips J. Res. 35 1

施引文献

[1]	Kyungho L, Haeung J, Byunghee C, Joonhee C, Pang Y S, Jinwoo M, Susanna K 2013 Proceedings of the 25th International Power Semiconductor Devices and ICs Kanazawa, May 26-30, 2013 p163
[2]	Yoshiaki T, Katakura H, Takatoshi O, Masanobu I, Hitoshi S 2013 Proceedings of the 25th International Power Semiconductor Devices and ICs Kanazawa, May 26-30, 2013 p145
[3]	Chang H, Jung J, Kim M H, Lee E K, Jang D E, Park J S, Jung J H, Yoon C J, Bea S R, Park C H 2012 Proceedings of the 24th International Power Semiconductor Devices and ICs Bruges, Belgium, June 3-7, 2012 p217
[4]	Duan B X, Yang Y T 2012 Chin. Phys. B 21 057201
[5]	Zhang X J, Yang Y T, Duan B X, Chen B, Chai C C, Song K 2012 Chin. Phys. B 21 017201
[6]	Zhang X J, Yang Y T, Duan B X, Chai C C, Song K, Chen B 2012 Chin. Phys. B 21 037303
[7]	Sameh G, Khalil N, Salama C A T 2003 IEEE Trans. Electron Dev. 50 1385
[8]	Sameh G, Khalil N, Li Z H, Salama C A T 2004 IEEE Trans. Electron Dev. 51 1185
[9]	Park Y, Salama C T 2005 Proceedings of the 17th International Power Semiconductor Devices and ICs Santa Barbara, California, May 26-30, 2005 p163
[10]	Zhang B, Chen L, Wu J, Li Z J 2005 International Conference on Communications, Circuits and System Hongkong, May 16-20, 2005 p1399
[11]	Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Dev. Lett. 30 305
[12]	Duan B X, Yang Y T 2011 Micro Nano Lett. 6 881
[13]	Duan B X, Zhang B, Li Z J 2007 Chin. J. Semicond. 28 166
[14]	Chen J B, Zhang B, Li Z J 2008 IEEE Electron Dev. Lett. 29 645
[15]	Duan B X, Zhang B, Li Z J 2005 Solid-State Electron. 49 1965
[16]	Duan B X, Zhang B, Li Z J 2006 IEEE Electron Dev. Lett. 27 377
[17]	Duan B X, Zhang B, Li Z J 2007 Chin. Phys. Lett. 24 1342
[18]	Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Dev. Lett. 30 1329
[19]	Duan B X, Yang Y T, Zhang B, Li Z J 2008 Chin. J. Semicond. 29 677
[20]	Duan B X, Yang Y T 2011 IEEE Trans. Electron Dev. 58 2057
[21]	Duan B X, Yang Y T, Zhang B 2010 Solid-State Electron. 54 685
[22]	Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 247302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 247302]
[23]	Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 227302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 227302]
[24]	Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 057302 (in Chinese) [段宝兴, 杨银堂 2014 63 057302]
[25]	ISE TCAD Manuals, release 10.0
[26]	Chen X B, Wang X, Johnny K O S 2000 IEEE Trans. Electron Dev. 47 1280
[27]	Chen X B, Johnny K O S 2001 IEEE Trans. Electron Dev. 48 344
[28]	Appels J A, Collet M G, Hart P A H, Vaes H M J 1980 Philips J. Res. 35 1

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