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2021, 70(6): 067301.
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Yang Chu-Ping, Geng Yi-Nan, Wang Jie, Liu Xing-Nan, Shi Zhen-Gang. Breakdown voltage of high pressure helium parallel plates and effect of field emission. Acta Physica Sinica,
2021, 70(13): 135102.
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Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang. Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer. Acta Physica Sinica,
2017, 66(16): 167301.
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Zhao Yi-Han, Duan Bao-Xing, Yuan Song, Lü Jian-Mei, Mei Yang. Novel lateral double-diffused MOSFET with vertical assisted deplete-substrate layer. Acta Physica Sinica,
2017, 66(7): 077302.
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Duan Bao-Xing, Li Chun-Lai, Ma Jian-Chong, Yuan Song, Yang Yin-Tang. New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layer. Acta Physica Sinica,
2015, 64(6): 067304.
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2015, 64(10): 105101.
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Duan Bao-Xing, Yang Yin-Tang. Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers. Acta Physica Sinica,
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Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong, Zhang Wei-Hua, Dai Hong-Li. A dual-trench silicon on insulator high voltage device with an L-shaped source field plate. Acta Physica Sinica,
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2014, 63(24): 247301.
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2014, 63(10): 107302.
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Duan Bao-Xing, Cao Zhen, Yuan Xiao-Ning, Yang Yin-Tang. New REBULF super junction LDMOS with the N type buffered layer. Acta Physica Sinica,
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Wang Xiao-Wei, Luo Xiao-Rong, Yin Chao, Fan Yuan-Hang, Zhou Kun, Fan Ye, Cai Jin-Yong, Luo Yin-Chun, Zhang Bo, Li Zhao-Ji. Mechanism and optimal design of a high-k dielectric conduction enhancement SOI LDMOS. Acta Physica Sinica,
2013, 62(23): 237301.
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2012, 61(22): 227302.
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2008, 57(4): 2456-2461.
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Li Qi, Li Zhao-Ji, Zhang Bo. Analytical model for the surface electrical field distribution of double RESURF device with surface implanted P-top region. Acta Physica Sinica,
2007, 56(11): 6660-6665.
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Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan. Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica,
2007, 56(5): 2895-2899.
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Zhao Yi, Wan Xing-Gong. Substrate and process dependence of gate oxide reliability of 0.18μm dual gate CMOS process. Acta Physica Sinica,
2006, 55(6): 3003-3006.
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Fang Jian, Qiao Ming, Li Zhao-Ji. Electric field distribution in charge imbalance super junction. Acta Physica Sinica,
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