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In order to break through the limit relationship between the breakdown voltage and specific on-resistance for LDMOS (lateral double-diffused MOSFET), a new super junction LDMOS is proposed with the electric field modulation by differently doping the buffered layer in this paper for the first time based on the buffered SJ-LDMOS. The new electric field introduced by the differently doping buffered layer, owing to the electric field modulation, is brought to the surface electric field of SJ-LDMOS, which alleviates a low lateral breakdown voltage due to the uneven electric field distribution for the LDMOS affected by the vertical electric field. Through the ISE simulation, the results are obtained that the surface electric field is optimized for the proposed SJ-LDMOS when the number of differently doping buffered layers is three. The saturated breakdown voltage for the new SJ-LDMOS is increased by about 50% compared with that for conventional LDMOS, and improved by about 32% compared with that for buffered SJ-LDMOS. The lateral breakdown voltage for unit length is increased to 18.48 V/μm. For the proposed SJ-LDMOS, the specific on-resistance is 25.6 mΩ· cm2 with a breakdown voltage of 382 V, which already breaks the limit relationship of 71.8 mΩ·cm2 with a breakdown voltage of 254 V in the conventional LDMOS.
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Keywords:
- lateral double-diffused MOSFET /
- super junction /
- breakdown voltage /
- specific on resistance
[1] Wei J, Luo X R, Shi X L, Tian R C, Zhang B, Li Z J 2014 Proceedings of the 17th International Power Semiconductor Devices and ICs Waikoloa, USA, June 15-19, 2014 p127
[2] He Y D, Zhang G G, Zhang X 2014 Proceedings of the 17^th International Power Semiconductor Devices and ICs Waikoloa, USA, June 15-19, 2014 p171
[3] Chen X B, Wang X, Johnny K O S 2000 IEEE Trans. Electron Dev. 47 1280
[4] Chen X B, Johnny K O S 2001 IEEE Trans. Electron Dev. 48 344
[5] Park Y, Salama C T 2005 Proceedings of the 17th International Power Semiconductor Devices and ICs Santa Barbara, USA, May 26-30, 2005 p163
[6] Zhang B, Chen L, Wu J, Li Z J 2005 International Conference on Communications, Circuits and System Hong Kong, May 27-30, 2005 p1399
[7] Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Dev. Lett. 30 305
[8] Duan B X, Yang Y T 2011 Micro Nano Lett. 6 881
[9] Appels J A, Collet M G, Hart P A H, Vaes H M J 1980 Philips J. Res. 35 1
[10] Luo Y C, Luo X R, Hu G Y, Fan Y H, Li P C, Wei J, Tan Q, Zhang B 2014 Chin. Phys. B 23 077306
[11] Hu S D, Wu X H, Zhu Z, Jin J J, Chen Y H 2014 Chin. Phys. B 23 067101
[12] Duan B X, Yang Y T 2011 IETE Tech. Rev. 28 503
[13] Duan B X, Yang Y T 2012 IETE Tech. Rev. 29 36
[14] Duan B X, Yang Y T 2012 IETE Tech. Rev. 29 276
[15] Duan B X, Zhang B, Li Z J 2006 J. Semicond. 27 886
[16] Duan B X, Zhang B, Li Z J 2005 Solid State Electron. 49 1965
[17] Duan B X, Zhang B, Li Z J 2006 IEEE Electron Dev. Lett. 27 377
[18] Duan B X, Zhang B, Li Z J 2007 Chin. Phys. Lett. 24 1342
[19] Duan B X, Yang Y T, Zhang B Li Z J 2008 Chin. J. Semicond. 29 677
[20] Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Dev. Lett. 30 1329
[21] Duan B X, Yang Y T 2011 IEEE Trans. Electron Dev. 58 2057
[22] Duan B X, Yang Y T, Zhang B 2010 Solid State Electron. 54 685
[23] Duan B X, Yang Y T 2012 Sci. China: Inf. Sci. 55 473
[24] Duan B X, Yang Y T 2012 Micro Nano Lett. 7 9
[25] Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 247302]
[26] Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 227302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 227302]
[27] Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 057302 (in Chinese) [段宝兴, 杨银堂 2014 63 057302]
[28] SE TCAD Manuals, release 10.0, Synopsys Coporation, Switzerland.
[29] Michael A, Vladimir R 1985 International Electron Devices Meeting Washington, USA, Dec. 1-4, 1985 p736
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[1] Wei J, Luo X R, Shi X L, Tian R C, Zhang B, Li Z J 2014 Proceedings of the 17th International Power Semiconductor Devices and ICs Waikoloa, USA, June 15-19, 2014 p127
[2] He Y D, Zhang G G, Zhang X 2014 Proceedings of the 17^th International Power Semiconductor Devices and ICs Waikoloa, USA, June 15-19, 2014 p171
[3] Chen X B, Wang X, Johnny K O S 2000 IEEE Trans. Electron Dev. 47 1280
[4] Chen X B, Johnny K O S 2001 IEEE Trans. Electron Dev. 48 344
[5] Park Y, Salama C T 2005 Proceedings of the 17th International Power Semiconductor Devices and ICs Santa Barbara, USA, May 26-30, 2005 p163
[6] Zhang B, Chen L, Wu J, Li Z J 2005 International Conference on Communications, Circuits and System Hong Kong, May 27-30, 2005 p1399
[7] Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Dev. Lett. 30 305
[8] Duan B X, Yang Y T 2011 Micro Nano Lett. 6 881
[9] Appels J A, Collet M G, Hart P A H, Vaes H M J 1980 Philips J. Res. 35 1
[10] Luo Y C, Luo X R, Hu G Y, Fan Y H, Li P C, Wei J, Tan Q, Zhang B 2014 Chin. Phys. B 23 077306
[11] Hu S D, Wu X H, Zhu Z, Jin J J, Chen Y H 2014 Chin. Phys. B 23 067101
[12] Duan B X, Yang Y T 2011 IETE Tech. Rev. 28 503
[13] Duan B X, Yang Y T 2012 IETE Tech. Rev. 29 36
[14] Duan B X, Yang Y T 2012 IETE Tech. Rev. 29 276
[15] Duan B X, Zhang B, Li Z J 2006 J. Semicond. 27 886
[16] Duan B X, Zhang B, Li Z J 2005 Solid State Electron. 49 1965
[17] Duan B X, Zhang B, Li Z J 2006 IEEE Electron Dev. Lett. 27 377
[18] Duan B X, Zhang B, Li Z J 2007 Chin. Phys. Lett. 24 1342
[19] Duan B X, Yang Y T, Zhang B Li Z J 2008 Chin. J. Semicond. 29 677
[20] Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Dev. Lett. 30 1329
[21] Duan B X, Yang Y T 2011 IEEE Trans. Electron Dev. 58 2057
[22] Duan B X, Yang Y T, Zhang B 2010 Solid State Electron. 54 685
[23] Duan B X, Yang Y T 2012 Sci. China: Inf. Sci. 55 473
[24] Duan B X, Yang Y T 2012 Micro Nano Lett. 7 9
[25] Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 247302]
[26] Duan B X, Yang Y T, Chen J 2012 Acta Phys. Sin. 61 227302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 61 227302]
[27] Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 057302 (in Chinese) [段宝兴, 杨银堂 2014 63 057302]
[28] SE TCAD Manuals, release 10.0, Synopsys Coporation, Switzerland.
[29] Michael A, Vladimir R 1985 International Electron Devices Meeting Washington, USA, Dec. 1-4, 1985 p736
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