Research progress of thermal transport in graphene-based thermal interfacial composite materials

An Meng; Sun Xu-Hui; Chen Dong-Sheng; Yang Nuo

doi:10.7498/aps.71.20220306

Abstract

With the rapid increase of the thermal power density of microelectronic devices and circuits, controlling its temperature has become an urgent need for the development and application of the electronic industry. By virtue of the ultrahigh thermal conductivity of graphene, developing high-performance graphene-based composite thermal interface materials has attracted much research attention and become one of hot research topics. The understanding of phonon transport mechanism in graphene-based composites at atomic scale can be helpful to enhance the heat conductive capability of composites systems. In this review, focused on graphene-based thermal interfaces materials, the heat conduction mechanism and the regulating strategy are introduced on both the internal thermal resistance and interfacial thermal resistance. Finally, the reseach progress and opportunities for future studies are also summarized.

Keywords:

Authors and contacts

1.
College of Mechanical & Electrical Engineering, Shaanxi University of Science and Technology, Xi’an 710021, China
2.
School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Corresponding author: An Meng, anmeng@sust.edu.cn ; Yang Nuo, nuo@hust.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 52006130), and the Fundamental Research Funds for Shaanxi Province (Grant No. 2020JQ-692) .

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Cited By

图 1 高功率密度集成电路散热示意图和热界面示意图

Figure 1. The schematic diagram of high-power integrated chip for heat dissipation.

DownLoad: Full-Size Img PowerPoint

图 2 (a) 石墨烯基复合体系中石墨烯面内振动(黑色箭头)和面外振动(红色箭头); (b) 复合体系中石墨烯内非平衡声子群温度; (c) 复合体系中界面石墨烯的面内振动(黑色箭头)和面外振动(红色箭头); (d) 界面石墨烯的非平衡声子温度

Figure 2. (a), (c) The schematic diagram of two types of graphene-based composites where in-plane (out-of-plane) phonon group is denoted as black arrow (red arrow); (b), (d) the temperature distribution of in-plane phonon group, out-of-plane phonon group in graphene and polymer.

DownLoad: Full-Size Img PowerPoint

图 3 (a) 面内异质结构和(c)范德瓦耳斯界面原子模型; (b) 面内异质界面和(d)范德瓦耳斯界面在沿热流方向的温度分布, 其中左边系统声子群A和B均对系统导热有贡献且存在非平衡现象, 右边系统仅有一种声子群

Figure 3. (a) The atomic structure models of in-plane heterointerface and (c) van der Waals heterointerfaces;the temperature distribution of phonon group A(b), T_{A, left}, phonon group B(d), T_{B, left} in the left region and phonon group T_right in right region.

DownLoad: Full-Size Img PowerPoint

map

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Vol. 71, Issue 16 - 2022-08-20

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