Simulation of displacement damage in indium phosphide induced by space heavy ions

Bai Yu-Rong; Li Yong-Hong; Liu Fang; Liao Wen-Long; He Huan; Yang Wei-Tao; He Chao-Hui

doi:10.7498/aps.70.20210303

Abstract

Indium phosphide (InP) has the characteristics of high electron mobility, large band gap, high temperature resistance, and radiation resistance. It is an important material of electronic devices in the space radiation environment. With the miniaturization of electronic devices, the displacement damage (DD) effect caused by a single heavy ion in the device may give rise to permanent failure. Therefore, this paper uses Monte Carlo software Geant4 to simulate the transportation process of space heavy ions(C, N, O, Fe) in InP. The non-ionizing energy loss (NIEL) of heavy ions is calculated for getting the information about displacement damage. Some conclusions are drawn as follows. 1) NIEL is proportional to the square of the atomic number, which means that single Fe can make severe displacement damage in InP. 2) The heavy ions NIEL is 3 to 4 orders of magnitude larger than PKA NIEL. The NIEL is proportional to the non-ionizing damage energy of recoil atoms produced by nuclear elastic collision, which indicates that the primary recoil atoms produced by heavy ions are the main cause of InP DD. 3) The number of heavy ions in space is small, so the proportion of total non-ionizing damage energy produced by heavy ions in 0.0125 mm³ InP is only 2.56% in one year. But the NIEL of heavy ions NIEL is 2–30 times that of protons and α particles, so the DD effect caused by single heavy ion incident on InP electronic device still needs to be considered. 4) NIEL decreases slightly with the increase of material thickness. The reason is that low-energy heavy ions are completely deposited in the front of InP, resulting in a non-uniform distribution of non-ionizing energy deposited in the material. Analyzing the dependence of mean DD energy with depth, we find that mean DD energy decreases with incident depth increasing, which means that the most severe DD region of heavy ions in InP is in the front of material.

Keywords:

Authors and contacts

School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China

Corresponding author: He Chao-Hui, hechaohui@xjtu.edu.cn

Funds: Project supported by the Basic Strength Program of China (Grant No. 2019-JCJQ-ZD-267)

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References

[1]	Yamaguchi M, Araki K, Kojima N, Ohshita Y 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Calgary, OR, Canada, June 15–August 21, 2020 pp149–151
[2]	O’Neill P M 2010 IEEE Trans. Nucl. Sci. 57 3148 Google Scholar
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[4]	Raine M, Jay A, Richard N, Goiffon V, Girard S, Gaillardin M, Paillet P 2017 IEEE Trans. Nucl. Sci. 64 133 Google Scholar
[5]	Yamaguchi M, Uemura C, Yamamoto A 1984 J. Appl. Phys. 55 1429 Google Scholar
[6]	Yamaguchi M, Ando K 1988 J. Appl. Phys. 63 5555 Google Scholar
[7]	Walters R J, Messenger S R, Summers G P, Burke E A, Keavney C J 1991 IEEE Trans. Nucl. Sci. 38 1153 Google Scholar
[8]	Keavney C J, Walters R J, Drevinsky P J 1993 J. Appl. Phys. 73 60 Google Scholar
[9]	Walters R J 1995 Microelectronics J. 26 697 Google Scholar
[10]	Messenger S R, County B, Road I H 1996 Solid. State. Electron. 39 797 Google Scholar
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[12]	Walters R J, Messenger S R, Summers G P, Romero M J, Al-Jassim M M, Araújo D, Garcia R 2001 J. Appl. Phys. 90 3558 Google Scholar
[13]	Herre O, Wesch W, Wendler E, Gaiduk P, Komarov F 1998 Phys. Rev. B-Condens. Matter Mater. Phys. 58 4832 Google Scholar
[14]	Gasparotto A, Carnera A, Frigeri C, Priolo F, Fraboni B, Camporese A, Rossetto G 1999 J. Appl. Phys. 85 753 Google Scholar
[15]	Kamarou A, Wesch W, Wendler E, Undisz A, Rettenmayr M 2008 Phys. Rev. B - Condens. Matter Mater. Phys. 78 054111 Google Scholar
[16]	Schnohr C S, Kluth P, Giulian R, Llewellyn D J, Byrne A P, Cookson D J, Ridgway M C 2010 Phys. Rev. B-Condens. Matter Mater. Phys. 81 1 Google Scholar
[17]	Summers G P, Burke E A, Shapiro P, Messenger S R, Walters R J 1993 IEEE Trans. Nucl. Sci. 40 1372 Google Scholar
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[20]	谢飞, 臧航, 刘方, 何欢, 廖文龙, 黄煜 2020 69 192401 Google Scholar Xie F, Zang H, Liu F, He H, Liao W L, Huang Y 2020 Acta Phys. Sin. 69 192401 Google Scholar
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[22]	李兴冀, 刘超铭, 孙中亮, 兰慕杰, 肖立伊, 何世禹 2013 62 058502 Google Scholar Li X J, Liu M C, Sun Z L, Lan M J, Xiao L Y, He S Y 2013 Acta Pyhs. Sin. 62 058502 Google Scholar
[23]	Mendenhall M H, Weller R A 2005 Nucl. Instruments Methods Phys. Res. B. 227 420 Google Scholar
[24]	Weller R A, Mendenhall M H, Fleetwod D M 2004 Trans. Nucl. Sci. 51 3669 Google Scholar
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[26]	Summers G P, Burke E A, Xapsos M A 1995 Radiat. Meas. 24 1 Google Scholar
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[28]	Robinson M T, Torrens L M 1974 Phys. Rev. B 8 15 Google Scholar
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图 1 能谱图　(a)宇宙射线能谱图; (b) 100 mil Al屏蔽后的宇宙射线能谱图

Figure 1. Energy spectrum: (a) Cosmic ray energy spectrum; (b) 100 mil Al shielded cosmic ray energy spectrum.

DownLoad: Full-Size Img PowerPoint

图 2 1−300 MeV质子入射(a) Si 和(b) InP的NIEL计算值

Figure 2. 1−300 MeV proton NIEL for (a) Si and (b) InP.

DownLoad: Full-Size Img PowerPoint

图 3 不同种类重离子(a) C, (b) N, (c) O, (d) Fe入射5000 μm InP产生的平均非电离损伤能随深度分布图

Figure 3. Distribution average non-ionization damage energy of different heavy ions (a) C, (b) N, (c) O, (d) Fe with depth in 5000 μm InP

DownLoad: Full-Size Img PowerPoint

表 1 Geant4模拟相关参数和NIEL计算值

Table 1. Geant4 Simulated parameters and NIEL.

质子能量/MeV	Si射程/mm	Si厚度/mm	NIEL/(MeV·cm²·g^–1)	InP射程/mm	InP厚度/mm	NIEL/(MeV·cm²·g^–1)
1	0.016	0.0018	0.07004	0.013	0.0015	0.0558
2	0.048	0.0050	0.03763	0.038	0.0040	0.0302
5	0.216	0.0220	0.01519	0.164	0.0180	0.0135
10	0.709	0.0750	0.00968	0.518	0.0550	0.0079
20	2.390	0.2400	0.00759	1.680	0.2000	0.0051
50	12.180	1.2200	0.00483	8.320	1.0000	0.0037
100	41.620	4.1800	0.00265	27.530	3.0000	0.0034
200	138.630	14.0000	0.00148	90.270	9.5000	0.0032
300	273.570	28.0000	0.00138	176.860	18.0000	0.0033

DownLoad: CSV

表 2 重离子入射InP材料的设计方案

Table 2. Design scheme of heavy ion incident on InP.

	粒子种类	粒子数目	InP材料厚度/μm
方法一	H	10⁶	500
	He	10⁶	500
	C	10⁶	500
	N	10⁶	500
	O	10⁶	500
	Fe	10⁶	500
方法二	H	12728631	500
	He	1187039	500
	C	30945	500
	N	8389	500
	O	29305	500
	Fe	3200	500
方法三	C	10⁶	500, 1000, 5000
	N	10⁶	500, 1000, 5000
	O	10⁶	500, 1000, 5000
	Fe	10⁶	500, 1000, 5000

DownLoad: CSV

表 3 宇宙射线粒子及其PKA在500 μm 厚的InP中产生的NIEL统计表

Table 3. NIEL of cosmic ray particles and their PKA produced in 500 μm InP.

粒子种类	统计种类	NIEL/ (MeV·cm²·g^–1)	NIEL 占比/%	变异系数
H	H	0.004316	98.365	0.03953
	PKA	7.1739×10^–5	1.635	0.08716
He	He	0.00861	96.443	0.02208
	PKA	3.17556×10^–4	3.557	0.04532
C	C	0.0165	99.906	0.01073
	PKA	1.54785×10^–5	0.094	0.20895
N	N	0.01798	99.928	0.01309
	PKA	1.2888×10^–5	0.072	0.30657
O	O	0.02132	99.936	0.01548
	PKA	1.3566×10^–5	0.064	0.20082
Fe	Fe	0.11922	99.976	0.00507
	PKA	2.9332×10^–5	0.024	0.15543

DownLoad: CSV

表 4 不同粒子在0.125 mm³ InP产生的非电离损伤能统计表

Table 4. Total non-ionization damage energy produced by cosmic particles in 0.125 mm³ InP.

粒子种类	入射数目	非电离损伤能/MeV	非电离损伤能占比/%	变异系数
H	12728631	12380.55	82.14	0.01366
He	1187039	2312.76	15.34	0.02426
C	30945	116.995	0.78	0.07564
N	8389	33.99	0.23	0.01548
O	29304	142.74	0.95	0.05274
Fe	3200	86.27	0.56	0.01301

DownLoad: CSV

表 5 重离子在500, 1000, 5000 μm InP产生的NIEL统计表

Table 5. NIEL of heavy ion produced in 500, 1000, 5000 μm InP.

重离子种类	材料厚度/μm	NIEL均值	变异系数
C	500	0.0165	0.01073
	1000	0.01639	0.00631
	5000	0.01539	0.00664
N	500	0.01798	0.01309
	1000	0.01755	0.01031
	5000	0.01628	0.00723
O	500	0.02132	0.01548
	1000	0.02087	0.00724
	5000	0.01878	0.00349
Fe	500	0.11922	0.00507
	1000	0.11591	0.00382
	5000	0.09486	0.00303

DownLoad: CSV

map

[1]	Yamaguchi M, Araki K, Kojima N, Ohshita Y 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Calgary, OR, Canada, June 15–August 21, 2020 pp149–151
[2]	O’Neill P M 2010 IEEE Trans. Nucl. Sci. 57 3148 Google Scholar
[3]	Srour J R, Palko J W 2013 IEEE Trans. Nucl. Sci. 60 1740 Google Scholar
[4]	Raine M, Jay A, Richard N, Goiffon V, Girard S, Gaillardin M, Paillet P 2017 IEEE Trans. Nucl. Sci. 64 133 Google Scholar
[5]	Yamaguchi M, Uemura C, Yamamoto A 1984 J. Appl. Phys. 55 1429 Google Scholar
[6]	Yamaguchi M, Ando K 1988 J. Appl. Phys. 63 5555 Google Scholar
[7]	Walters R J, Messenger S R, Summers G P, Burke E A, Keavney C J 1991 IEEE Trans. Nucl. Sci. 38 1153 Google Scholar
[8]	Keavney C J, Walters R J, Drevinsky P J 1993 J. Appl. Phys. 73 60 Google Scholar
[9]	Walters R J 1995 Microelectronics J. 26 697 Google Scholar
[10]	Messenger S R, County B, Road I H 1996 Solid. State. Electron. 39 797 Google Scholar
[11]	Yamaguchi M, Takamoto T, Ohmori M 1997 J. Appl. Phys. 81 1116 Google Scholar
[12]	Walters R J, Messenger S R, Summers G P, Romero M J, Al-Jassim M M, Araújo D, Garcia R 2001 J. Appl. Phys. 90 3558 Google Scholar
[13]	Herre O, Wesch W, Wendler E, Gaiduk P, Komarov F 1998 Phys. Rev. B-Condens. Matter Mater. Phys. 58 4832 Google Scholar
[14]	Gasparotto A, Carnera A, Frigeri C, Priolo F, Fraboni B, Camporese A, Rossetto G 1999 J. Appl. Phys. 85 753 Google Scholar
[15]	Kamarou A, Wesch W, Wendler E, Undisz A, Rettenmayr M 2008 Phys. Rev. B - Condens. Matter Mater. Phys. 78 054111 Google Scholar
[16]	Schnohr C S, Kluth P, Giulian R, Llewellyn D J, Byrne A P, Cookson D J, Ridgway M C 2010 Phys. Rev. B-Condens. Matter Mater. Phys. 81 1 Google Scholar
[17]	Summers G P, Burke E A, Shapiro P, Messenger S R, Walters R J 1993 IEEE Trans. Nucl. Sci. 40 1372 Google Scholar
[18]	Allison J, Amako K, Apostolakis J, et al. 2006 IEEE Trans. Nucl. Sci. 53 270 Google Scholar
[19]	申帅帅, 贺朝会, 李永宏 2018 67 182401 Google Scholar Shen S S, He C H, Li Y H 2018 Acta Phys. Sin. 67 182401 Google Scholar
[20]	谢飞, 臧航, 刘方, 何欢, 廖文龙, 黄煜 2020 69 192401 Google Scholar Xie F, Zang H, Liu F, He H, Liao W L, Huang Y 2020 Acta Phys. Sin. 69 192401 Google Scholar
[21]	Garcia A R, Mendoza E, Cano-Ott D, Nolte R, Martinez T, Algora A, Tain J L, Banerjee K, Bhattacharya C 2017 Nucl. Instruments Methods Phys. Res. Sect. A: Accel. Spectrometers, Detect. Assoc. Equip. 868 73 Google Scholar
[22]	李兴冀, 刘超铭, 孙中亮, 兰慕杰, 肖立伊, 何世禹 2013 62 058502 Google Scholar Li X J, Liu M C, Sun Z L, Lan M J, Xiao L Y, He S Y 2013 Acta Pyhs. Sin. 62 058502 Google Scholar
[23]	Mendenhall M H, Weller R A 2005 Nucl. Instruments Methods Phys. Res. B. 227 420 Google Scholar
[24]	Weller R A, Mendenhall M H, Fleetwod D M 2004 Trans. Nucl. Sci. 51 3669 Google Scholar
[25]	Boberg P R, Brownstein B, Dietrich W F, Flueckiger E O, Petersen E L, Shea M A, Smart D F, Smith E C 1997 IEEE Trans. Nucl. Sci. 44 2150 Google Scholar
[26]	Summers G P, Burke E A, Xapsos M A 1995 Radiat. Meas. 24 1 Google Scholar
[27]	Jun I, Xapsos M A, Messenger S R, Burke E A, Walters R J, Summers G P, Jordan T 2003 IEEE Trans. Nucl. Sci. 50 1924 Google Scholar
[28]	Robinson M T, Torrens L M 1974 Phys. Rev. B 8 15 Google Scholar
[29]	Akkerman A, Barak J 2006 IEEE Trans. Nucl. Sci. 53 3667 Google Scholar
[30]	Akkerman A, Barak J 2007 Nucl. Instrum. Methods Phys. Res. Sect. B: Beam Interact. Mater. Atoms 260 529 Google Scholar
[31]	Jun I, Kim W, Evans R 2009 IEEE Trans. Nucl. Sci. 56 3229 Google Scholar
[32]	路伟, 王同权, 王兴功, 刘雪林 2011 核技术 34 529 Lu W, Wang T Q, Wang X G, Liu X L 2011 Nucl. Tech. 34 529
[33]	Dale C G, Chen L, McNulty P J, Marshall P W, Burke E A 1994 IEEE Trans. Nucl. Sci. 41 197 Google Scholar
[34]	Ziegler J F, Ziegler M D, Biersack J P 2010 Nucl. Instruments Methods Phys. Res. B 268 1818 Google Scholar
[35]	Xapsos M A, Burke E A, Badavi F F, Townsend L W, Wilson J W, Jun I 2004 IEEE Trans. Nucl. Sci. 51 3250 Google Scholar

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