Research progress of green chemical mechanical polishing slurry

Gao Pei-Li; Zhang Zhen-Yu; Wang Dong; Zhang Le-Zhen; Xu Guang-Hong; Meng Fan-Ning; Xie Wen-Xiang; Bi Sheng

doi:10.7498/aps.70.20201917

Abstract

Atomic-scale fabrication is an effective way to realize the ultra-smooth surfaces of semiconductor wafers on an atomic scale. As one of the crucial manufacturing means for atomically precise surface of large-sized functional materials, chemical mechanical polishing (CMP) has become a key technology for ultra-smooth and non-damage surface planarization of advanced materials and devices by virtue of the synergetic effect of chemical corrosion and mechanical grinding. It has been widely used in aviation, aerospace, microelectronics, and many other fields. However, in order to achieve ultra-smooth surface processing at an atomic level, chemical corrosion and mechanical grinding methods commonly used in CMP process require some highly corrosive and toxic hazardous chemicals, which would cause irreversible damage to the ecosystems. Therefore, the recently reported green chemical additives used in high-performance and environmentally friendly CMP slurry for processing atomically precise surface are summarized here in this paper. Moreover, the mechanism of chemical reagents to the modulation of materials surface properties in the CMP process is also analyzed in detail. This will provide a reference for improving the surface characteristics on an atomic scale. Finally, the challenges that the polishing slurry is facing in the research of atomic-scale processing are put forward, and their future development directions are prospected too, which has profound practical significance for further improving the atomic-scale surface accuracy.

Keywords:

Authors and contacts

1.
Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Institute of High Performance Manufacturing, Dalian University of Technology, Dalian 116024, China
2.
Beijing Spacecrafts, China Academy of Space Technology, Beijing 100094, China
3.
Weichai Power Co., Ltd., Weifang 261061, China

Corresponding author: Zhang Zhen-Yu, zzy@dlut.edu.cn

Funds: Project supported by the National Key R&D Program of China (Grant No. 2018YFA0703400)

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References

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Cited By

图 1 CMP系统示意图

Figure 1. Diagram of CMP system.

DownLoad: Full-Size Img PowerPoint

图 2 不同H₂O₂浓度下铝合金基底的氧化和腐蚀过程示意图^[37]

Figure 2. Schematic diagram for the oxidation and corrosion processes of substrates with various H₂O₂ concentration^[37].

DownLoad: Full-Size Img PowerPoint

图 3 (a) 利用臭氧气体发生器产生的含气泡的强化浆料对SiC衬底的CMP方法示意图^[48]; (b) 基于电芬顿反应的6H-SiC单晶增强CMP法原理图^[49]; (c) 氯化钠水溶液阳极氧化装置示意图^[50]; (d) 光化学辅助CMP示意图^[51]

Figure 3. (a) Illustration of proposed CMP method of SiC substrate by enhanced slurry containing bubbles enclosing ozone gas generated by ozone gas generator^[48]; (b) schematic diagram of enhanced CMP method for single-crystal 6H-SiC based on electro-Fenton reaction^[49]; (c) schematic diagram of anodic oxidation setup with sodium chloride aqueous solution^[50]; (d) schematic diagram of photochemically combined CMP process^[51].

DownLoad: Full-Size Img PowerPoint

图 4 研制的优化CMP浆料的CMP机理示意图^[29]

Figure 4. Schematic diagram of the CMP mechanism for the developed optimal CMP slurry^[29].

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图 5 (a) 具有阻挡层的Cu互连线的抛光过程; (b) CMP加工后具有的典型的碟状结构图形^[70]; (c) 电偶腐蚀的示意图^[71]

Figure 5. (a) Schematic of the CMP process of Cu interconnect with a barrier; (b) typical dishing profiles of the pattern feature after CMP process^[70]; (c) schematic diagram of galvanic corrosion^[71].

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图 6 离子(a)和非离子(b)表面活性剂对高离子强度泥浆稳定性的影响; (c) 阴离子和非离子表面活性剂协同混合的高离子强度浆料稳定机理^[102]

Figure 6. Effects of ionic (a) and nonionic (b) surfactant addition on the stability of high ionic strength slurries; (c) mechanism of high ionic strength slurry stabilization by the synergistic mixture of anionic and nonionic surfactants^[102].

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图 7 表面活性剂在液-汽界面和液-固界面的分布示意图　(a) 阳离子表面活性剂; (b) 非离子表面活性剂; (c) 阴离子表面活性剂^[103]

Figure 7. Schematics of how the surfactants are partitioned on the liquid-vapor and liquid-solid interfaces: (a) Cationic surfactants; (b) nonionic surfactants; (c) anionic surfactants^[103]

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图 8 (a) 污染的图案化晶圆SEM图像(左)以及污染(中间)和清洁(右)的晶圆表面缺陷图^[107]; (b) 污染(左)和清洁(右)的铜样品AFM图像^[88]

Figure 8. (a) SEM images (left) of contaminated patterned wafer and the defect map on contaminated (centre) and cleaned (right) wafer surface^[107]; (b) AFM images of contaminated (left) and cleaned (right) Cu sample^[88].

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map

[1]	Liao Z R, Abdelhafeez A, Li H N, Yang Y, Diaz O Z, Axinte D 2019 Int. J. Mach. Tools Manuf. 143 63 Google Scholar
[2]	Chappert C, Bernas H, Ferre J, Kottler V, Jamet J P, Chen Y, Cambril E, Devolder T, Rousseaux F, Mathet V, Launois H 1998 Science 280 1919 Google Scholar
[3]	Krishnan M, Nalaskowski J W, Cook L M 2010 Chem. Rev. 110 178 Google Scholar
[4]	Zhong Z W 2020 Int. J. Adv. Manuf. Technol. 109 1419 Google Scholar
[5]	Frank B, Kahl P, Podbiel D, Spektor G, Orenstein M, Fu L, Weiss T, Hoegen M H, Davis T J, zu Heringdorf F J M 2017 Sci. Adv. 3 1700721 Google Scholar
[6]	Nagpal P, Lindquist N C, Oh S H, Norris D J 2009 Science 325 594 Google Scholar
[7]	Zhang S J, Zhou Y P, Zhang H J, Xiong Z W, To S 2019 Int. J. Mach. Tools Manuf. 142 16 Google Scholar
[8]	Guo X G, Yuan S, Huang J X, Chen C, Kang R K, Jin Z J, Guo D M 2020 Appl. Surf. Sci. 505 144610 Google Scholar
[9]	Yuan S, Guo X G, Huang J X, Gou Y J, Jin Z J, Kang R K, Guo D M 2020 Tribol. Int. 148 106308 Google Scholar
[10]	Qin C J, Hu Z H, Tang A M, Yang Z P, Luo S 2020 Wear 452–453 203293 Google Scholar
[11]	Zhang Z F, Yan W X, Zhang L, Liu W L, Song Z T 2011 Microelectron. Eng. 88 3020 Google Scholar
[12]	Xu W H, Cheng Y Y, Zhong M 2019 Microelectron. Eng. 216 111029 Google Scholar
[13]	Werrell J M, Mandal S, Thomas E L H, Brousseau E B, Lewis R, Borri P, Davies P R, Williams O A 2017 Sci. Technol. Adv. Mater. 18 654 Google Scholar
[14]	Lin Z C, Wang R Y, Ma S H 2018 Tribol. Int. 117 119 Google Scholar
[15]	Sanusi N F A M, Yusoff M H M, Seng O B, Marzuki M S, Abdullah A Z 2018 J. Membr. Sci. 548 232 Google Scholar
[16]	Oh M H, Nho J S, Cho S B, Lee J S, Singh R K 2011 Powder Technol. 206 239 Google Scholar
[17]	Zhou Y, Pan G S, Shi X L, Xu L, Zou C L, Gong H, Luo G H 2014 Appl. Surf. Sci. 316 643 Google Scholar
[18]	Ballarin N, Carraro C, Maboudian R, Magagnin L 2014 Electrochem. Commun. 40 17 Google Scholar
[19]	Wysocki B, Idaszek J, Buhagiar J, Szlazak K, Brynk T, Kurzydlowski K J, Swieszkowski W 2019 Mater. Sci. Eng., C 95 428 Google Scholar
[20]	Liu J W, Jiang L, Wu H Q, Zhao T, Qian L M 2020 J. Electrochem. Soc. 167 131502 Google Scholar
[21]	Yin D, Yang L, Ma T D, Xu Y, Tan B M, Yang F, Sun X Q, Liu M R 2020 Mater. Chem. Phys. 252 123230 Google Scholar
[22]	Pang R, Zhang X L 2019 J. Cleaner Prod. 233 84 Google Scholar
[23]	Xiong X Q, Ma Q R, Yuan Y Y, Wu Z H, Zhang M 2020 J. Cleaner Prod. 267 121957 Google Scholar
[24]	Mandal S, Thomas E L H, Gines L, Morgan D, Green J, Brousseau E B, Williams O A 2018 Carbon 130 25 Google Scholar
[25]	Jiang L, He Y Y, Luo J B 2014 Tribol. Lett. 56 327 Google Scholar
[26]	Hazarika J, Rajaraman P V 2020 ECS J. Solid State Sci. Technol. 9 024008 Google Scholar
[27]	Zhang M, Oh J K, Huang S Y, Lin Y R, Liu Y, Mannan M S, Cisneros-Zevallos L, Akbulut M 2015 J. Food Eng. 161 8 Google Scholar
[28]	Gottselig S M, Dunn-Horrocks S L, Woodring K S, Coufal C D, Tri D 2016 J. Poult. Sci. 95 1356 Google Scholar
[29]	Zhang Z Y, Liao L X, Wang X Z, Xie W X, Guo D M 2020 Appl. Surf. Sci. 506 144670 Google Scholar
[30]	Zhang Z Y, Cui J F, Zhang J B, Liu D D, Yu Z J, Guo D M 2019 Appl. Surf. Sci. 467–468 5 Google Scholar
[31]	Zhang Z Y, Wang B, Zhou P, Kang R K, Zhang B, Guo D M 2016 Sci. Rep. 6 26891 Google Scholar
[32]	Zhang Z Y, Wang B, Zhou P, Guo D M, Kang R K, Zhang B 2016 Sci. Rep. 6 22466 Google Scholar
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