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本文重点探讨了金属有机源化学气相沉积生长ZnO薄膜中氢气的作用与机理. 研究表明氢气对ZnO薄膜的结构与性质具有重要的影响. 当采用叔丁醇为氧源时，氢气对ZnO薄膜的晶体质量，表面结构和发光性质主要产生负面的影响，同时发现氢气的加入有助于抑制碳的沾污. 而当采用笑气为氧源时，测量显示表面变光滑，晶体质量得到提高，发光强度也得到提升. 氢气在笑气作为氧源生长ZnO的过程中基本起到了正面的作用. 论文最后从氢气降低生长表面能量，提高表面原子迁移能力但存在表面腐蚀作用的方向以上结果给予了较好的解释. 研究显示MOCVD生长高质量ZnO薄膜中氢气的优化具有特别重要的意义.
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关键词:
- 金属有机源化学气相沉积外延生长 /
- 氧化锌 /
- 不同氧源 /
- 氢气影响
This paper focuses on the influence and mechanism of H2 in the eptaxial growth of ZnO using metal-organic chemical vapor deposition method. Studies show that hydrogen has a significant influence on the structure and properties of ZnO films. Hydrogen produces a mainly negative impact on crystal quality, surface structure, and optical properties of ZnO films when tert-butanol (t-BuOH) is used as the O sources. Raman scattering shows that hydrogen has a very good effect on the suppression of carbon contamination. When nitrous oxide is used as the O sources, the surface of ZnO films becomes smooth, and the crystal quality and optical property are improved. It is shown that hydrogen can play a positive role when N2O is used as O source. In this paper we highly estimate hydrogen's ability of reducing the surface growth energy, improving the migration of the surface atoms and the corrosion effect on the surface. Studies show that the optimization of hydrogen has a significant effect during the epitaxial growth of ZnO using the MOCVD method.-
Keywords:
- metal-organic chemical vapor deposition epitaxial growth /
- zinc oxide /
- different O source /
- hydrogen
[1] Shibata N, Uemura T, Yamaguchi H, Yasukawa T 2003 Phys. Status Solidia 200 58
[2] He T, Xia Y J, Qin H C, Guan Z S, Li W Y 2011 Physics 40 580 (in Chinese) [贺涛, 夏玉静, 秦洪春, 管自生, 李伟英 2011 物理 40 580]
[3] Duan L, Lin B X, Fu Z X 2003 Physics 32 27 (in Chinese) [段理, 林碧霞, 傅竹西2003 物理 32 27]
[4] Minegishi K, Koiwai Y, Kikuchi K 1997 Japan J. Appl. Phys 36 L 1453
[5] Yang Y T, Wu J, Ding R X, Song J X, Shi L C, Cai Y R 2008 Acta Phys. Sin. 57 7151 (in Chinese)[杨银堂, 武军, 丁瑞雪, 宋久旭, 石立春, 蔡玉荣 2008 57 7151]
[6] Zhao H F, Cao Q X, Li J T 2008 Acta Phys. Sin. 57 5828 (in Chinese)[赵慧芳, 曹全喜, 李建涛 2008 57 5828]
[7] Yuan N Y, Li J H, Fan L N, Wang X Q, Xie J S 2006 Acta Phys. Sin. 55 3581 (in Chinese)[袁宁一, 李金华, 范利宁, 王秀琴, 谢建生 2006 55 3581]
[8] Wang J Z, Elangovovan E, Vincent S, Alain L, Gaëlle A, François J, Rodrigo M, Elvira F 2008 Bol. Soc. Esp. Ceram. V 47 242
[9] Jung C KiH Y MinS O WonK C 2003 Journal of The Electrochemical Society 150 225
[10] Liu X D, Gu S L, Li F, Zhu S M, Liu W, Ye J D, Shan Z P, Liu S B, Tang K, Zhu G Y, Zhang R, Zhen Y D 2008 Chinese Journal of Luminescence 29 3 (in Chinese)[ 刘雪冬, 顾书林, 李峰, 朱顺明, 刘伟, 叶建东, 单正平, 刘少波, 汤琨, 朱光耀, 张荣, 郑有炓 2008 发光学报 29 3]
[11] Prakoso S P, Saleh R 2011 World Journal of Condensed Matter Physics 1 130
[12] Tzolov M, Tzenova U N, Dimova-Malinovska D, Kalitzova M, Pizzuto C, Vitali G, Zollo G, Ivanov I 2000 The solid thin film 379 28
[13] He Y L, Liu X N, Yin C Z, Zhang Y 1993 Chin. Phys. B 2 807
[14] Wang Y G, Gu C Z, Jin Z S, Xiong Y Y, Lin Z D, Feng K A 2000 Chin. Phys. Lett. 17 294
[15] Roy V A L, Djurisic A B, Chan W K, Gao J, Lui H F, Surya C 2003 Appl. Phys. Lett. 83 141
[16] Leung C Y, Djurišić, A B, Leung Y H, Ding L, Yang C L, Ge W K 2006 Journal of Crystal Growth 290 131
[17] Michihiro S, Kazuhiro M, Hiroyuki K, Takafumi Y 2004 Journal of applied physics 95 10
[18] Martinsa J B L Taft C A, Lie S K, Longo E 1999 Journal of Molecular Structure 528 161
[19] Martins J B L, Longo E, Octavio D Salmon R, Espinoza V A A, Taft C A 2004 Chem. Phys. Lett. 400 481
[20] Liu W, Gu S L, Ye J D, Zhu S M, Liu S M, Zhou X, Zhang R, Shi Y, Zheng Y D, Hang Y, Zhang C L 2006 Appl. Phys. Lett. 88 092101
[21] Zhu S M, Huang S M, Gu S L, Zhu Z B, Gu R 2012 Chinese Journal of Luminescence 33 665 (in Chinese) [朱顺明黄时敏顾书林朱振邦顾然郑有炓 2012 发光学报 33 665]
[22] Su H B, Dai J N, Wang L, Pu Y, Fang W Q, Jiang F 2006 Acta Optica Sinica 26 7 (in Chinese) [苏宏波, 戴江南, 王立, 蒲勇, 方文卿, 江风 2006 光学学报 26 7]
[23] Sano M, Miyamoto K, Kato H, Yao T J Appl Phys 95 5527
[24] Zhu G Y 2011 Ph. D Thesis (Nanjing University) (in Chinese) [朱光耀 2011 年博士学位论文(南京大学)]
[25] Gregory L G, John T Y 1982 J. Chem. Phys. 77 3744
[26] Klaus E, Rainald M 2008 Thin Solid Films 516 4620
-
[1] Shibata N, Uemura T, Yamaguchi H, Yasukawa T 2003 Phys. Status Solidia 200 58
[2] He T, Xia Y J, Qin H C, Guan Z S, Li W Y 2011 Physics 40 580 (in Chinese) [贺涛, 夏玉静, 秦洪春, 管自生, 李伟英 2011 物理 40 580]
[3] Duan L, Lin B X, Fu Z X 2003 Physics 32 27 (in Chinese) [段理, 林碧霞, 傅竹西2003 物理 32 27]
[4] Minegishi K, Koiwai Y, Kikuchi K 1997 Japan J. Appl. Phys 36 L 1453
[5] Yang Y T, Wu J, Ding R X, Song J X, Shi L C, Cai Y R 2008 Acta Phys. Sin. 57 7151 (in Chinese)[杨银堂, 武军, 丁瑞雪, 宋久旭, 石立春, 蔡玉荣 2008 57 7151]
[6] Zhao H F, Cao Q X, Li J T 2008 Acta Phys. Sin. 57 5828 (in Chinese)[赵慧芳, 曹全喜, 李建涛 2008 57 5828]
[7] Yuan N Y, Li J H, Fan L N, Wang X Q, Xie J S 2006 Acta Phys. Sin. 55 3581 (in Chinese)[袁宁一, 李金华, 范利宁, 王秀琴, 谢建生 2006 55 3581]
[8] Wang J Z, Elangovovan E, Vincent S, Alain L, Gaëlle A, François J, Rodrigo M, Elvira F 2008 Bol. Soc. Esp. Ceram. V 47 242
[9] Jung C KiH Y MinS O WonK C 2003 Journal of The Electrochemical Society 150 225
[10] Liu X D, Gu S L, Li F, Zhu S M, Liu W, Ye J D, Shan Z P, Liu S B, Tang K, Zhu G Y, Zhang R, Zhen Y D 2008 Chinese Journal of Luminescence 29 3 (in Chinese)[ 刘雪冬, 顾书林, 李峰, 朱顺明, 刘伟, 叶建东, 单正平, 刘少波, 汤琨, 朱光耀, 张荣, 郑有炓 2008 发光学报 29 3]
[11] Prakoso S P, Saleh R 2011 World Journal of Condensed Matter Physics 1 130
[12] Tzolov M, Tzenova U N, Dimova-Malinovska D, Kalitzova M, Pizzuto C, Vitali G, Zollo G, Ivanov I 2000 The solid thin film 379 28
[13] He Y L, Liu X N, Yin C Z, Zhang Y 1993 Chin. Phys. B 2 807
[14] Wang Y G, Gu C Z, Jin Z S, Xiong Y Y, Lin Z D, Feng K A 2000 Chin. Phys. Lett. 17 294
[15] Roy V A L, Djurisic A B, Chan W K, Gao J, Lui H F, Surya C 2003 Appl. Phys. Lett. 83 141
[16] Leung C Y, Djurišić, A B, Leung Y H, Ding L, Yang C L, Ge W K 2006 Journal of Crystal Growth 290 131
[17] Michihiro S, Kazuhiro M, Hiroyuki K, Takafumi Y 2004 Journal of applied physics 95 10
[18] Martinsa J B L Taft C A, Lie S K, Longo E 1999 Journal of Molecular Structure 528 161
[19] Martins J B L, Longo E, Octavio D Salmon R, Espinoza V A A, Taft C A 2004 Chem. Phys. Lett. 400 481
[20] Liu W, Gu S L, Ye J D, Zhu S M, Liu S M, Zhou X, Zhang R, Shi Y, Zheng Y D, Hang Y, Zhang C L 2006 Appl. Phys. Lett. 88 092101
[21] Zhu S M, Huang S M, Gu S L, Zhu Z B, Gu R 2012 Chinese Journal of Luminescence 33 665 (in Chinese) [朱顺明黄时敏顾书林朱振邦顾然郑有炓 2012 发光学报 33 665]
[22] Su H B, Dai J N, Wang L, Pu Y, Fang W Q, Jiang F 2006 Acta Optica Sinica 26 7 (in Chinese) [苏宏波, 戴江南, 王立, 蒲勇, 方文卿, 江风 2006 光学学报 26 7]
[23] Sano M, Miyamoto K, Kato H, Yao T J Appl Phys 95 5527
[24] Zhu G Y 2011 Ph. D Thesis (Nanjing University) (in Chinese) [朱光耀 2011 年博士学位论文(南京大学)]
[25] Gregory L G, John T Y 1982 J. Chem. Phys. 77 3744
[26] Klaus E, Rainald M 2008 Thin Solid Films 516 4620
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