Design and analysis of bilayer metallic grating polarizer in deep ultraviolet band

Wu Fang; Bu Yang; Liu Zhi-Fan; Wang Shao-Qing; Li Si-Kun; Wang Xiang-Zhao

doi:10.7498/aps.70.20201403

Abstract

The 193-nm immersion step-and-scan projection lithography tool is the most critical equipment in the high-volume manufacturing of integrated circuit with 45nm technology nodes and beyond. With the increase of numerical aperture (NA) of the projection lens, the resolution of lithography tool can be enhanced effectively. However, the polarization effect of the optics in an exposure system is more significant in high NA immersion lithography, which influences the lithographic imaging quality greatly. Thus, the polarization parameters of the immersion exposure system should be controlled -accurately for ensuring the lithographic imaging quality. With the advantages of miniaturization and high-accuracy online detection, the grating is applied to the polarization detection of the immersion lithography tools. A bilayer metallic grating polarizer with compact structure and excellent polarization performance is designed based on the inverse polarization effect and transmission enhancement effect on TE-polarized light. Rigorous coupled-wave theory and finite-different time-domain method are used to design the bilayer metallic grating polarizer. The former is used for analyzing the initial structure parameters of the grating, and the latter is used for acquiring the cross-sectional electromagnetic field of the structure. The initial parameters of the grating are calculated based on the surface plasmons resonance and Fabry-Perot-like theory. The influence of geometrical parameters of the grating on its polarization performance is analyzed. The simulation results show that the enhancement of TE-polarized light transmittance is mainly modulated by the middle layer height of the grating. Firstly, the TE-polarized light transmission is enhanced by the standing wave in the bottom medium cavity, and further enhanced by the top optical funnel formed. However, the transmission suppression of TM-polarized light is mainly caused by the low frequency mode of charge movement formed by surface plasmons. For the designed grating polarizer, the transmittance of TE-polarized light is 56.8%, and the extinction ratio is 65.6 dB at normal incidence. Comparing with previous metal grating polarizer, the extinction ratio of the designed grating is increased by four orders of magnitude.

Keywords:

Authors and contacts

1.
Laboratory of Information Optics and Opto-Electronic Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3.
School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200444, China

Corresponding author: Bu Yang, buyang@siom.ac.cn

Funds: Project supported by National Science and Technology Major Project of the Ministry of Science and Technology of China (2016ZX02201-001), the Open Fund Project of Key Laboratory of Opto-Electronic Information Processing of Guangxi Province, China (Grant No. KFJJ2016-03), and the Shanghai Committee of Science and Technology, China (Grant No. 18511104500)

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References

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Cited By

图 1 双层金属光栅偏振器结构示意图

Figure 1. Schematic diagram of bilayer metallic grating polarizer.

DownLoad: Full-Size Img PowerPoint

图 2 占空比对光栅偏振性能的影响　(a) 透过率; (b) 消光比

Figure 2. Polarization performance of grating as functions of the grating duty cycle: (a) Transmission; (b) extinction ratio.

DownLoad: Full-Size Img PowerPoint

图 3 二氧化硅层高度对光栅偏振性能的影响　(a) 透过率; (b) 消光比

Figure 3. Polarization performance of grating as functions of the silica height: (a) Transmission; (b) Extinction ratio.

DownLoad: Full-Size Img PowerPoint

图 4 正入射时光栅截面电场分布　(a) TM偏振光; (b) TE偏振光

Figure 4. Field distribution of grating cross-section when the light is incident normally: (a) TM-polarized light; (b) TE-polarized light.

DownLoad: Full-Size Img PowerPoint

图 5 金属层高度对光栅偏振性能的影响　(a) TE透过率; (b) TM透过率; (c)消光比

Figure 5. Polarization performance of grating as functions of the metal layer height: (a) TE transmission; (b) TM transmission; (c) Extinction ratio.

DownLoad: Full-Size Img PowerPoint

图 6 光栅氟化镁层高度对偏振性能的影响　(a) 透过率; (b) 消光比

Figure 6. Polarization performance of grating as functions of Magnesium fluoride height: (a) Transmission; (b) Extinction ratio.

DownLoad: Full-Size Img PowerPoint

图 7 TE偏振光正入射时光栅截面场分布　(a) 电场分布; (b) 坡印廷矢量方向(箭头)和幅度(颜色图)

Figure 7. Field distribution of grating cross-section when TE-polarized light is incident normally: (a) Electric field distribution; (b) Poynting vector direction (arrowheads) and magnitude (color map).

DownLoad: Full-Size Img PowerPoint

图 8 TM偏振光正入射时光栅截面场分布　(a) 瞬时(箭头)和时间平均电场分布; (b) 坡印廷矢量方向(箭头)和幅度(颜色图)

Figure 8. Field distribution of grating cross-section when TM-polarized light is incident normally: (a) Instantsneous (arrowheads) and time-averaged (color map) electric field distribution; (b) Poynting vector direction (arrowheads) and magnitude (color map).

DownLoad: Full-Size Img PowerPoint

图 9 光栅的工艺容差分析　(a), (b)为占空比和金属层高度分别对TE透过率和消光比的影响; (c), (d)为占空比和中间层高度分别对TE透过率和消光比的影响; (e), (f)为金属层和中间层高度分别对TE透过率和消光比的影响

Figure 9. Fabrication tolerance analysis of grating: (a) and (b) are TE transmission and extinction ratio as function of the grating duty cycle and metal layer height, respectively; (c) and (d) are TE transmission and extinction ratio as function of the grating duty cycle and middle layer height, respectively; (e) and (f) are TE transmission and extinction ratio as function of the grating metal layer height and middle layer height, respectively.

DownLoad: Full-Size Img PowerPoint

map

[1]	Bruce W S, Cashmore J S 2002 Proceedings of the Society of Photo-Optical Instrumentation Engineers Santa Clara, CA, March 5–8, 2002 p11
[2]	Wim de B, Geert S, Nicolas L M, Armand K, Henk van G, Michel K, Mark K, Koen I S, Laurens de W, Martijn W, Steve H, Christian W 2006 Optical Microlithography XIX San Jose, CA, February 21–24, 2006 61540 B
[3]	Jia Y, Li Y Q, Liu L H, Han C Y, Liu X L 2014 7 th International Symposium on Advanced Optical Manufacturing and Testing Technologies-Design Manufacturing, and Testing of Micro- and Nano-Optical Devices, and Systems Harbin, Peoples R China, April 26–29, 2014 928309
[4]	Xu S, Tao B, Guo Y X, Li G F 2019 Opt. Eng. 58 082405 Google Scholar
[5]	Toru F, Naonori K, Yasushi M 2005 Proceedings of the Society of Photo-Optical Instrumentation Engineers San Jose, CA, February 28–March 3, 2005 p846
[6]	ASML Netherlands B V 2005 U.S. Patent 7375799 B2
[7]	Canon Kabushiki K 2009 U.S. Patent 7525656
[8]	Li L, Li, Y Q, Chi Q, Liu K, Zhang X B, Li J H 2014 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies-Optical Test and Measurement Technology and Equipment Harbin, Peoples R China, April 26–29, 2014 928232
[9]	Xu M, Urbach H P, Bore D K G, Cornelissen H J 2005 Opt. Express 13 2303 Google Scholar
[10]	Sasaki T, Kushida H, Sakamoto K, Noda K, Okamoto H, Kawatsuki N, Ono H 2019 Opt. Commun. 431 63 Google Scholar
[11]	Nguyen D M, Lee D, Rho J 2017 Sci. Rep. 7 2611 Google Scholar
[12]	Thomas W, Thomas K, Michael H, Ernst B K, Andreas T 2012 Appl. Opt. 51 3224 Google Scholar
[13]	Kosuke A, Satoshi Y, Atsushi K, Toyohiko Y 2014 Appl. Opt. 53 2942 Google Scholar
[14]	Thomas S, Stefanie K, Kristin P, Oliver P, Kay D, Daniel F, Ivan O, Adriana S, Ernst-Bernhard K, Andreas T 2016 Adv. Opt. Mater. 4 1780 Google Scholar
[15]	Honkanen M, Kettunen V, Kuittinen M, Lautanen J, Turunen J, Schnabel B, Wyrowski F 1999 Appl. Phys. B 68 81 Google Scholar
[16]	Kang G G, Vartiainen I, Bai B F, Tuovinen H, Turunen J 2011 Appl. Phys. Lett. 99 071103 Google Scholar
[17]	Kang G G, Rahom€aki J, Dong J, Honkanen S, Turunen J 2013 Appl. Phys. Lett. 103 131110 Google Scholar
[18]	张冲, 胡敬佩, 周如意, 刘铁诚, Sergey Avakaw, 曾爱军, 黄惠杰 2019 中国激光 47 49 Google Scholar Zhang C, Hu J P, Zhou R Y, Liu T C, Sergey A, Zeng A J, Huang H J 2019 Chin. J. Lasers 47 49 Google Scholar
[19]	Yu Z N, Deshpande P, Wu W, Wang J, Chou S Y 2000 Appl. Phys. Lett. 77 927 Google Scholar
[20]	Ekinci Y, Solak H H, David C, Sigg H 2006 Opt. Express 14 2323 Google Scholar
[21]	褚金奎, 王倩怡, 王志文, 王立鼎 2015 64 164206 Google Scholar Chu J K, Wang Q Y, Wang Z W, Wang LD 2015 Acta Phys. Sin. 64 164206 Google Scholar
[22]	Hwang B J, Oh B, Kim Y, Silva S, Kim J O, Czaplewski D A, Ryu J E, Kim E K, Urbas A, Zhou J F, Ku Z, Lee S J 2018 Sci. Rep. 8 14787 Google Scholar
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[24]	Ebbesen T W, Lezec H J, Ghaemi H F, Thio T, Wol P A 1998 Nature 391 667 Google Scholar
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[26]	Cao Q, Lalanne P 2002 Phys. Rev. Lett. 88 057403 Google Scholar
[27]	褚培新, 张玉斌, 陈俊学 2020 69 134205 Google Scholar Chu P X, Zhang Y B, Chen J X 2020 Acta Phys. Sin. 69 134205 Google Scholar
[28]	Crouse D, Keshavareddy P 2005 Opt. Express 13 7760 Google Scholar
[29]	Yaremchuk Y, Fitio V, Bobitski Y 2017 Semicond. Phys. Quantum Electron. Optoelectron. 20 85 Google Scholar
[30]	Li S, Huang L, Ling Y H, Liu W B, Ba C F, Li H H 2019 Sci. Rep. 9 17117 Google Scholar
[31]	Homola J, Koudela I, Yee S S 1999 Sens. Actuators, B: Chem. 54 16 Google Scholar
[32]	Genet C, Exter M P, Woerdman J P 2003 Opt. Commun. 225 331 Google Scholar
[33]	Wang B, Wang G P 2005 Appl. Phys. Lett. 87 013107 Google Scholar
[34]	Xie Y, Zakharian R A, Moloney J V, Mansuripur M 2005 Opt. Express 13 4485 Google Scholar
[35]	Borisov A G, García de Abajo F J, Shabanov S V 2005 Phys. Rev. Lett. 71 075408 Google Scholar
[36]	Hibbins A P, Evans B R, Sambles J R 2005 Science 308 670 Google Scholar
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[38]	周云, 申溯, 叶燕, 浦东林, 陈林森 2010 光学学报 30 1158 Google Scholar Zhou Y, Shen S, Ye Y, Pu D L, Chen L S 2010 Acta Optic. Sin. 30 1158 Google Scholar
[39]	王亚伟, 刘明礼, 刘仁杰, 雷海娜, 邓晓斌 2010 59 4030 Google Scholar Wang Y W, Liu M L, Liu R J, Lei H N, Deng X B 2010 Acta Phys. Sin. 59 4030 Google Scholar
[40]	王亚伟, 刘明礼, 刘仁杰, 雷海娜, 田相龙 2011 60 024217 Google Scholar Wang Y W, Liu M L, Liu R J, Lei H N, Tian X L 2011 Acta Phys. Sin. 60 024217 Google Scholar
[41]	Barnes W L, Dereux A, Ebbesen T W 2003 Nature 424 824 Google Scholar

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