基于深紫外激光-光发射电子显微技术的高分辨率磁畴成像

吕浩昌; 赵云驰; 杨光; 董博闻; 祁杰; 张静言; 朱照照; 孙阳; 于广华; 姜勇; 魏红祥; 王晶; 陆俊; 王志宏; 蔡建旺; 沈保根; 杨峰; 张申金; 王守国

doi:10.7498/aps.69.20200083

摘要

基于磁二色效应的光发射电子显微镜磁成像技术是研究薄膜磁畴结构的一种重要研究手段, 具有空间分辨率高、可实时成像以及对表面信息敏感等优点. 以全固态深紫外激光(波长为177.3 nm; 能量为7.0 eV)为激发光源的光发射电子显微技术相比于传统的光发射电子显微镜磁成像技术(以同步辐射光源或汞灯为激发源), 摆脱了大型同步辐射光源的限制; 同时又解决了当前阈激发研究中由于激发光源能量低难以实现光电子直接激发的技术难题, 在实验室条件下实现了高分辨磁成像. 本文首先对最新搭建的深紫外激光-光发射电子显微镜系统做了简单介绍. 然后结合超高真空分子束外延薄膜沉积技术, 成功实现了L1₀-FePt垂直磁各向异性薄膜的磁畴观测, 其空间分辨率高达43.2 nm, 与利用X射线作为激发源的光发射电子显微镜磁成像技术处于同一量级, 为后续开展高分辨磁成像提供了便利. 最后, 重点介绍了在该磁成像技术方面取得的一些最新研究成果: 通过引入Cr的纳米“台阶”, 成功设计出FePt的(001)与(111)双取向外延薄膜; 并在“台阶”区域使用线偏振态深紫外激光观测到了磁线二色衬度, 其强度为圆二色衬度的4.6倍. 上述研究结果表明: 深紫外激光-光发射电子显微镜磁成像技术在磁性薄膜/多层膜体系磁畴观测方面具备了出色的分辨能力, 通过超高真空系统与分子束外延薄膜制备系统相连接, 可以实现高质量单晶外延薄膜制备、超高真空原位传输和高分辨磁畴成像三位一体的功能, 为未来磁性薄膜材料的研究提供了重要手段.

关键词:

Abstract

Magnetic imaging technology based on photo-emission electron microscopy (PEEM) has become an important and powerful tool for observing the magnetic domain in spintronics. The PEEM can get access to real-time imaging with high spatial resolution and is greatly sensitive to the spectroscopic information directly from the magnetic films and surfaces through photoemission process with variable excitation sources. Moreover, the breakthrough in the deep ultraviolet (DUV) laser technology makes it possible to realize domain imaging without the limitation of synchrotron radiation facilities or the direct excitation of photoelectrons due to the high enough photon energy of the source in the current threshold excitation study. In this review article, the deep ultraviolet photo-emission electron microscopy system is first introduced briefly. Then, a detailed study of the magnetic domain observation for the surface of L1₀-FePt films by the DUV-PEEM technique is presented, where a spatial resolution as high as 43.2 nm is successfully achieved. The above results clearly indicate that the DUV-PEEM reaches a level equivalent to the level reached by X-ray photoemission imaging technique. Finally, a series of recent progress of perpendicular FePt magnetic thin films obtained by the DUV-PEEM technique is provided in detail. For example, a stepped Cr seeding layer is used to form the large-area epitaxial FePt films with (001) and (111) two orientations, where magnetic linear dichroism (MLD) with large asymmetry is observed in the transition area of two phases. The signal of MLD is 4.6 times larger than that of magnetic circular dichroism. These results demonstrate that the magnetic imaging technology based on DUV-PEEM with excellent resolution ability will potentially become an important method to study magnetic materials in the future.

Keywords:

作者及机构信息

1.
北京科技大学材料科学与工程学院材料物理与化学系, 北京　100083

2.
中国科学院物理研究所, 磁学国家重点实验室, 北京　100190

3.
中国科学院理化技术研究所, 功能晶体与激光技术重点实验室, 北京　100190

通信作者: 王守国, sgwang@ustb.edu.cn

基金项目: 国家自然科学基金(批准号: 51625101, 51961145305, 51971026, 51431009)和中央高校基本科研业务费(批准号: FRF-TP-16-OO1C2)资助的课题

Authors and contacts

1.
Department of Materials Physics and Chemistry, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

2.
State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

3.
Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China

Corresponding author: Wang Shou-Guo, sgwang@ustb.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51625101, 51961145305, 51971026, 51431009) and the Fundamental Research Fund for the Central Universities, China (Grant No. FRF-TP-16-OO1C2)

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施引文献

图 1 (a)通过λ/4波片输出圆偏振态DUV激光; (b)通过λ/2波片调制DUV激光线偏振态^[69]

Fig. 1. Schematic drawings of the DUV laser optical system with (a) circular and (b) linear polarizations^[69].

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图 2 深紫外激光与PEEM的连接示意图

Fig. 2. Optical system of the DUV-PEEM system.

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图 3 深紫外激光-光发射电子显微镜系统装置示意图^[69]

Fig. 3. A schematic layout of the DUV laser-based LEEM/PEEM system^[69].

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图 4 MBE-PEEM系统连接示意图和实物照片

Fig. 4. Schematic setup and photo of MBE-PEEM combined system.

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图 5 (a) Hg灯激发下碳原子吸附于Ru (0001) 表面的PEEM图像; (b)在PEEM图像所示位置进行线扫描的归一化强度曲线与计算得到的空间分辨率^[71]

Fig. 5. (a) PEEM image of multilayer graphene on Ru (0001) taken with Hg arc lamp; (b) spatial resolution calculated from obtained PEEM image^[71].

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图 6 LEEM模式的电子光路系统(电子枪部分)

Fig. 6. Optical system of LEEM (E-Gun).

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图 7 (a) Si (001) 的LEEM暗场像; (b) Si (001) 表面的(2 × 1)重构LEED图像; (c)在LEEM图像所示位置进行线扫描的归一化强度曲线与计算得到的空间分辨率^[71]

Fig. 7. (a) Dark field image and (b) LEED pattern of a (2 × 1) reconstructed Si (001) surface; (c) spatial resolution calculated from obtained LEEM image^[71].

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图 8 (a)单晶Ru (0001) 表面生长的岛状PbO的DUV-PEEM图像; (b)在PEEM图像所示位置进行线扫描的归一化强度曲线与计算得到的空间分辨率^[71]

Fig. 8. (a) DUV-PEEM image of PbO islands on Ru(0001); (b) spatial resolution calculated from obtained PEEM image^[71].

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图 9 (a) PEEM系统能量狭缝的结构示意图; (b)色散模式下采集得到的单晶Ru (0001)上生长岛状PbO样品的深紫外激光-光发射谱图; (c)线扫描得到的费米边附近激光光发射谱的归一化强度曲线

Fig. 9. (a) Schematic drawing of energy filter in PEEM system; (b) DUV-photo emission spectrum obtained from island-shaped PbO grown on Ru (0001) in dispersion mode; (c) normalized line profile with the calculated spatial resolution from selected area marked in panel (b).

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图 10 (a) MgO/Cr (5 nm)/Pt (10 nm)/FePt (20nm)结构样品垂直于膜面的磁滞回线; (b) FePt薄膜的LEEM图像(E_p = 8.6 eV), 插图所示为该区域的LEED图像(E_p = 16.3 eV); (c)图(b)红色方框标识区域使用圆偏振DUV获得的PEEM磁畴图像; (d)使用磁力显微镜采集同一样品的磁畴照片; (e)插图所示视野内对DUV-PEEM磁畴成像空间分辨率的测定^[69]

Fig. 10. (a) Schematic structure and out-of-plane hysteresis loop of MgO (001) sub. /Cr (5 nm)/Pt (10 nm)/FePt (20 nm) films; (b) LEEM image (E_p = 8.6 eV) and LEED (E_p = 16.3 eV) pattern (inset) of FePt film; (c) magnetic domain (contrast enhanced) of the area marked by a red dashed rectangle in (b) taken with circularly polarized DUV laser; (d) magnetic domain image of the FePt films with the same structure obtained by magnetic force microscopy; (e) normalized line profile with the estimated spatial resolution from selected area marked in inset^[69].

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图 11 (a) Cr纳米台阶上外延生长的Pt种子层结构示意图; (b) Pt种子层的UV-PEEM图像; (c)暗区A对应的LEEM与LEED图像; (d)亮区B对应的LEEM与LEED图像; (e)过渡区域的LEEM图像(区域A, B与C的位置在(b)图中标出); (f) Pt种子层选区((b)图中红色线框) DUV-PEEM图像; (g)与(f)图同区域的线二色DUV-PEEM图像^[69]

Fig. 11. (a) Schematic drawing of a Pt seed layer with Cr step. (b) UV PEEM image of Pt seed layer consisting of two orientations. LEEM and LEED patterns of the selected areas marked by blue rectangles in panel (b): (c) dark area A, (d) light area B and (e) boundary area C. (f) DUV-PEEM image of the selected area marked by a red dashed rectangle in panel (b). (g) Linear dichroism image of the same area as panel (f)^[69].

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图 12 (a)在具有双晶体取向的Pt种子层上生长FePt后的UV-PEEM图像; (b)区域I ((a)图标注位置)的LEED图像; (c)区域II的LEED图像; (d)使用线偏振态深紫外激光在选定区域((a)图红色线框标记位置)采集的DUV-PEEM图像^[69]

Fig. 12. (a) UV-PEEM image of FePt film deposited on Pt seed layer with two orientations. LEED patterns of selected areas marked by blue rectangles in panel (a): (b) light area I and (c) dark area II. (d) DUV-PEEM image of the selected area marked by a red dashed rectangle in panel (a) taken with linearly polarized laser^[69].

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图 13 在同一视野下分别使用(a)左旋与(b)右旋的圆偏振态深紫外激光采集的DUV-PEEM图像; (c)计算得到的MCD磁畴图像; 在同一视野下分别使用偏振方向为(d)竖直与(e)水平的线偏振态激光采集的DUV-PEEM图像; (f)计算所得MLD磁畴图像; (g)磁线二色衬度随激光偏振方向的变化规律^[69]

Fig. 13. DUV-PEEM images taken with (a) left-circularly polarized and (b) right-circularly polarized light; (c) MCD image of FePt film; (d), (e) DUV-PEEM images taken with linearly-polarized laser (polarization shown by red arrow); (f) MLD image of FePt film; (g) polarization dependent MLD asymmetry for the selected area^[69].

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表 1 三种光源的特性比较^[65]

Table 1. Properties comparing of the three source^[65].

	Source
	DUV-DPL	Synchrotron radiation	Gas discharge laser
Energy resolution/meV	～0.26	1—5	～1.2
Photon circulation	10¹⁴—10¹⁵	10¹⁰—10¹²	～10¹²
Photon flux density/photon·s^–1·cm^–2	10¹⁹—10²⁰	10¹²—10¹⁴	< 10¹⁴
Wavelength range/nm	170—210	1—210	58.5
Mode of operation	ns, ps, fs pulse	ps pulse	continuous wave
Detection depth/nm	～10 (bulk effect)	0.5—2 (skin effect)	～0.5 (skin effect)

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