Fabrication of zigzag-edged graphene antidot lattice and its transport properties

Zhang Ting-Ting; Cheng Meng; Yang Rong; Zhang Guang-Yu

doi:10.7498/aps.66.216103

Abstract

Graphene nanostructures with defined edges are proposed as a promising platform for the realization of nano-electronics and spin-electronics. However, patterned graphene nanostructure can lead to extra damage and drastically reduce its charge carrier mobility due to the edge disorder. The high flexibility of a top-down patterning method with edge smoothness is extremely desirable. Hydrogen plasma enhanced anisotropic etching graphene is demonstrated to be an efficient method of fabricating zigzag-edge graphene nanostructures. In addition, boron nitride is shown to be an excellent substrate for graphene due to its atomic flatness. Here in this work, we fabricate zigzag edge graphene antidot lattices on a boron nitride substrate via dry transfer method and traditional electron beam lithography, and reactive ion etching followed by hydrogen anisotropic etching approach. At low magnetic fields, weak localization is observed and its visibility is enhanced by intervalley scattering on antidot edges. We observe commensurate features in magnetotransport properties which stem from carriers around one antidot, signifying the high quality of our patterned samples. At high magnetic field, crossover from Shubnikov-de Haas oscillation to quantum Hall effect can be clearly observed due to the high mobility of our zigzag edge graphene antidot lattices. The transport properties of our patterned samples suggest that our fabrication method paves the way for achieving high quality graphene antidot lattices. High quality zigzag edge graphene antidot lattice might be a great platform to study the transport properties of lateral superlattice potential modulation graphene.

Keywords:

Authors and contacts

1.
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2.
Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China;
3.
Collaborative Innovation Center of Quantum Matter, Beijing 100190, China;
4.
School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China

Corresponding author: Yang Rong, ryang@iphy.ac.cn;gyzhang@iphy.ac.cn ; Zhang Guang-Yu, ryang@iphy.ac.cn;gyzhang@iphy.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61325021, 11574361, 61390503) and the National Basic Research Program of China (Grant Nos. 2013CB934500, 2013CBA01602).

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Cited By

[1]	Kim K, Choi J Y, Kim T, Cho S H, Chung H J 2011 Nature 479 338
[2]	Liu D P, Yu Z M, Liu Y L 2016 Phys. Rev. B 94 155102
[3]	Son Y W, Cohen M L, Louie S G 2006 Nature 444 347
[4]	Kim W Y, Kim K S 2008 Nat. Nanotechnol. 3 408
[5]	Min S K, Kim W Y, Cho Y, Kim K S 2011 Nat. Nanotechnol. 6 162
[6]	Long M, Liu E, Wang P, Gao A, Xia H, Luo W, Wang B, Zeng J, Fu Y, Xu K, Zhou W, L Y, Yao S, Lu M, Chen Y, Ni Z, You Y, Zhang X, Qin S, Shi Y, Hu W, Xing D, Miao F 2016 Nano Lett. 16 2254
[7]	Zhang T T, Wu S, Yang R, Zhang G Y 2017 Frontiers Phys. 12 127206
[8]	Yu Z M, Pan H, Yao Y 2015 Phys. Rev. B 92 155419
[9]	Nikitin A Y, Guinea F, Martin-Moreno L 2012 Appl. Phys. Lett. 101 151119
[10]	Karamitaheri H, Pourfath M, Faez R, Kosina H 2011 J. Appl. Phys. 110 054506
[11]	Pedersen T G, Flindt C, Pedersen J, Mortensen N A, Jauho A P, Pedersen K 2008 Phys. Rev. Lett. 100 136804
[12]	Shen T, Wu Y Q, Capano M A, Rokhinson L P, Engel L W, Ye P D 2008 Appl. Phys. Lett. 93 122102
[13]	Shimizu T, Nakamura J, Tada K, Yagi Y, Haruyama J 2012 Appl. Phys. Lett. 100 023104
[14]	Yagi R, Shimomura M, Tahara F, Kobara H, Fukada S 2012 J. Phys. Soc. Jpn. 81 063707
[15]	Eroms J, Weiss D 2009 New J. Phys. 11 095021
[16]	Bai J, Zhong X, Jiang S, Huang Y, Duan X 2010 Nat. Nanotechnol. 5 190
[17]	Yang W, Chen G, Shi Z, Liu C C, Zhang L, Xie G, Cheng M, Wang D, Yang R, Shi D, Watanabe K, Taniguchi T, Yao Y, Zhang Y, Zhang G 2013 Nat. Mater. 12 792
[18]	Ponomarenko L A, Gorbachev R V, Yu G L, Elias D C, Jalil R, Patel A A, Mishchenko A, Mayorov A S, Woods R C, Wallbank J R, Mucha-Kruczynski M, Piot B A, Potemski M, Grigorieva I V, Novoselov K S, Guinea F, Fal'ko V I, Geim A K 2013 Nature 497 594
[19]	Dean C R, Wang L, Maher P, Forsythe C, Ghahari F, Gao Y, Katoch J, Ishigami M, Moon P, Koshino M, Taniguchi T, Watanabe K, Shepard K L, Hone J, Kim P 2013 Nature 497 598
[20]	Lu X B, Zhang G Y 2015 Acta Phys. Sin. 64 077305 (in Chinese) [卢晓波, 张广宇 2015 64 077305]
[21]	Lu X, Yang W, Wang S, Wu S, Chen P, Zhang J, Zhao J, Meng J, Xie G, Wang D, Wang G, Zhang T T, Watanabe K, Taniguchi T, Yang R, Shi D, Zhang G 2016 Appl. Phys. Lett. 108 113103
[22]	Nihey F, Nakamura K, Takamasu T, Kido G, Sakon T, Motokawa M 1999 Phys. Rev. B 59 14872
[23]	Smet J H, von Klitzing K, Weiss D, Wegscheider W 1998 Phys. Rev. Lett. 80 4538
[24]	Eroms J, Tolkiehn M, Weiss D, Rossler U, de Boeck J, Borghs S 2002 Physica E 12 918
[25]	Albrecht C, Smet J H, von Klitzing K, Weiss D, Umansky V V, Schweizer H 2001 Phys. Rev. Lett. 86 147
[26]	Shabani J, Shayegan M, Winkler R 2008 Phys. Rev. Lett. 100 096803
[27]	Sandner A, Preis T, Schell C, Giudici P, Watanabe K, Taniguchi T, Weiss D, Eroms J 2015 Nano Lett. 15 8402
[28]	Yagi R, Sakakibara R, Ebisuoka R, Onishi J, Watanabe K, Taniguchi T, Iye Y 2015 Phys. Rev. B 92 195406
[29]	Taychatanapat T, Watanabe K, Taniguchi T, Jarillo-Herrero P 2013 Nat. Phys. 9 225
[30]	Dean C R, Young A F, Cadden-Zimansky P, Wang L, Ren H, Watanabe K, Taniguchi T, Kim P, Hone J, Shepard K L 2011 Nat. Phys. 7 693
[31]	Bischoff D, Krhenmann T, Drscher S, Gruner M A, Barraud C, Ihn T, Ensslin K 2012 Appl. Phys. Lett. 101 203103
[32]	Yang R, Zhang L, Wang Y, Shi Z, Shi D, Gao H, Wang E, Zhang G 2010 Adv. Mater. 22 4014
[33]	Shi Z, Yang R, Zhang L, Wang Y, Liu D, Shi D, Wang E, Zhang G 2011 Adv. Mater. 23 3061
[34]	Wang G, Wu S, Zhang T, Chen P, Lu X, Wang S, Wang D, Watanabe K, Taniguchi T, Shi D, Yang R, Zhang G 2016 Appl. Phys. Lett. 109 053101
[35]	Wang G L, Xie L, Chen P, Yang R, Shi D X, Zhang G Y 2016 Acta Phys. Sin. 65 196101 (in Chinese) [王国乐, 谢立, 陈鹏, 杨蓉, 时东霞, 张广宇 2016 65 196101]
[36]	Zomer P J, Dash S P, Tombros N, van Wees B J 2011 Appl. Phys. Lett. 99 232104

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Vol. 66, Issue 21 - 2017-11-05

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