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中国物理学会期刊
Xi Xiao-Wen, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Fan Qing-Yang. Influence of the external condition on the damage process of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulseJ. Acta Physica Sinica, 2017, 66(7): 078401. DOI: 10.7498/aps.66.078401
Citation: Xi Xiao-Wen, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Fan Qing-Yang. Influence of the external condition on the damage process of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulseJ. Acta Physica Sinica, 2017, 66(7): 078401. DOI: 10.7498/aps.66.078401

    Influence of the external condition on the damage process of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

    CSTR: 32037.14.aps.66.078401
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