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By using the pulsed laser single effect facility, the single event upset and latch-up phenomenon are studied, and the bitmap of 90 nm complementary metal oxide semiconductor (CMOS) static random-access memory (SRAM) is mapped. It is shown that many multiple bit upsets occur and pulsed supply current of 20 mA amplitude is monitored. Based on the technology computer aided design (TCAD), it is found that the localized latch-up in CMOS SRAM is the main reason for the single event multiple bit upsets. Finally, by analyzing the results of the pulsed laser experiment and TCAD, it is found that the P/N well potential collapse is the key physical mechanism responsible for the spreading of the single event latch-up effect in 90 nm CMOS SRAM.
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Keywords:
- single event latch-up effect /
- device simulation /
- multiple bit upsets /
- pulsed laser
[1] Dodds N A, Hppten N C, Reed R A 2012 IEEE Trans. Nucl. Sci. 59 2642
[2] Voldman S H, Gebreselasie E, Zierak M, Hershberger D, Collins D, Feilchenfeld N, Onge St S, Dunn J 2005 Proceedings of the 43th Annual International Reliability Physics Symposium San Jose, USA, April 17-21, 2005 p129
[3] Hargrove M J, Voldman S H, Gauthier R, Brown I, Duncan K, Craig W 1998 Proceedings of the 36th Annual International Reliability Physics Symposium Reno NV, USA, March 31-April 2, 1998 p269
[4] Sukhaseum N, Samaras A, Du D L, Vandevelde B, Chatry N, Bezerra F 2012 Proceedings of the 13th European Conference on Radiation and Its Effects on Components and Systems Biarritz, France, September 24-28, 2012
[5] Luo Y H, Zhang F Q, Guo H X, Hajdas W, Zhou H 2013 Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems Oxford, UK, September 23-27, 2013
[6] Han J W, Zhang Z L, Feng G Q, Ma Y Q 2009 Spacecraft Environment Engineering 26 125 (in Chinese) [韩建伟, 张振龙, 封国强, 马英起 2009 航天器环境工程 26 125]
[7] Zhang K Y, Guo H X, Luo Y H, He B P, Yao Z B, Zhang F Q, Wang Y M 2009 Acta Phys. Sin. 58 8651 (in Chinese) [张科营, 郭红霞, 罗尹红, 何宝平, 姚志斌, 张凤祁, 王园明 2009 58 8651]
[8] Chen J J, Chen S M, Liang B, Deng K F 2012 Chin. Phys. B 21 016103
[9] Iwata H, Ohzone T 1995 IEEE Trans. Nucl. Sci. 42 148
[10] Nelson J G, Arthur F W, Nicholas M A, Jonathan R A 2011 IEEE Trans. Nucl. Sci. 58 2614
[11] Dodds N A, Hutson J M, Pellish J A, Reed R A, Kim H S, Berg M D, Friendlich M R, Phan A M, Seidleck C M, Xapsos M A, Deng X, Baumann R C, Schrimpf R D, King M P, Massengil L W, Weller R A 2010 IEEE Trans. Nucl. Sci. 57 3575
[12] Morris W 2003 Proceedings of the 41th Annual International Reliability Physics Symposium Dallas, Texas, March 30-April 4, 2003 p76
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[1] Dodds N A, Hppten N C, Reed R A 2012 IEEE Trans. Nucl. Sci. 59 2642
[2] Voldman S H, Gebreselasie E, Zierak M, Hershberger D, Collins D, Feilchenfeld N, Onge St S, Dunn J 2005 Proceedings of the 43th Annual International Reliability Physics Symposium San Jose, USA, April 17-21, 2005 p129
[3] Hargrove M J, Voldman S H, Gauthier R, Brown I, Duncan K, Craig W 1998 Proceedings of the 36th Annual International Reliability Physics Symposium Reno NV, USA, March 31-April 2, 1998 p269
[4] Sukhaseum N, Samaras A, Du D L, Vandevelde B, Chatry N, Bezerra F 2012 Proceedings of the 13th European Conference on Radiation and Its Effects on Components and Systems Biarritz, France, September 24-28, 2012
[5] Luo Y H, Zhang F Q, Guo H X, Hajdas W, Zhou H 2013 Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems Oxford, UK, September 23-27, 2013
[6] Han J W, Zhang Z L, Feng G Q, Ma Y Q 2009 Spacecraft Environment Engineering 26 125 (in Chinese) [韩建伟, 张振龙, 封国强, 马英起 2009 航天器环境工程 26 125]
[7] Zhang K Y, Guo H X, Luo Y H, He B P, Yao Z B, Zhang F Q, Wang Y M 2009 Acta Phys. Sin. 58 8651 (in Chinese) [张科营, 郭红霞, 罗尹红, 何宝平, 姚志斌, 张凤祁, 王园明 2009 58 8651]
[8] Chen J J, Chen S M, Liang B, Deng K F 2012 Chin. Phys. B 21 016103
[9] Iwata H, Ohzone T 1995 IEEE Trans. Nucl. Sci. 42 148
[10] Nelson J G, Arthur F W, Nicholas M A, Jonathan R A 2011 IEEE Trans. Nucl. Sci. 58 2614
[11] Dodds N A, Hutson J M, Pellish J A, Reed R A, Kim H S, Berg M D, Friendlich M R, Phan A M, Seidleck C M, Xapsos M A, Deng X, Baumann R C, Schrimpf R D, King M P, Massengil L W, Weller R A 2010 IEEE Trans. Nucl. Sci. 57 3575
[12] Morris W 2003 Proceedings of the 41th Annual International Reliability Physics Symposium Dallas, Texas, March 30-April 4, 2003 p76
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