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To ascertain the damage mechanism caused by high-energy proton irradiation to AlGaN/GaN power devices of enhanced Cascode structures, we study the radiation effect of enhanced Cascode structure and depletion AlGaN/GaN power devices by using 60 MeV energy protons in this work. In the case of proton injection reaching 1×1012 p/cm2, the experimental results show that the threshold voltage of the Cascode type device is negatively drifted, the transconductance decreases, and the peak leakage current increases. The threshold voltage decreases from 4.2 V to 3.0 V, with a decrement of 1.2 V, and the peak transconductance value decreases from 0.324 S/mm to 0.260 S/mm, with a decrement of about 19.75%. There is no significant change after the conventional depleted AlGaN/GaN device has been irradiated. The Cascode-type AlGaN/GaN power device is more sensitive to proton irradiation than the depletion-type AlGaN/GaN device. The Cascode-type device is sensitive to proton irradiation because of its structure connected to a silicon-based MOS tube. Proton irradiation causes the silicon-based MOS gate oxide layer to generate a large amount of net positive charge, induces an ionization damage effect, and causes threshold voltage to negatively drift and the gate leakage current to increase. The equivalent 60 MeV energy protons and cumulative injection of 1×1012 p/cm2 dose of the
$ {}_{}{}^{60}\rm{C}\rm{o}~\rm{\gamma } $ radiation device is used to obtain the ionization damage effect. It is found that after being irradiated by the equivalent dose${}_{}{}^{60}\rm{C}\rm{o}~\rm{\gamma }$ ray , the device has the threshold voltage decreasing from 4.15 V to 2.15 V, with a negative drift of 2 V; transconductance peak decreases from 0.335 S/mm to 0.300 S/mm, with an approximate decrement of 10.45%. The degradation of the electrical properties of the device after being irradiated by${}_{}{}^{60}\rm{C}\rm{o}~\rm{\gamma }$ ray is consistent with the degradation law after being irradiated by high-energy protons. In order to further verify the experimental accuracy and conclusions, the ionization energy loss and non-ionization energy loss induced by radiation in the device are obtained by Monte Carlo simulation. The simulation results show that the ionization energy loss induces silicon-based MOS to generate oxide trap charge and interfacial state trap charge, which is mainly responsible for the performance degradation of AlGaN/GaN HEMT power devices with enhanced Cascode structure.-
Keywords:
- enhanced AlGaN/GaN HEMT /
- proton irradiation /
- ionization energy loss
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Gao W Y, Yan R L, Yu X F, Ren D Y, Fan L 1992 J. Semiconduct. 13 475
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图 1 增强型Cascode GaN HEMT器件结构图
Figure 1. Structure diagram of enhanced Cascode GaN HEMT device.
图 2 增强型Cascode结构氮化镓器件开封装图
Figure 2. Internal equivalent circuit diagram of enhanced Cascode structure.
图 3 质子辐照前后增强型Cascode结构AlGaN/GaN HEMT器件阈值电压及跨导曲线
Figure 3. Threshold voltage and transconductance curve of AlGaN/GaN HEMT devices of enhanced Cascode structure before and after proton irradiation.
图 4 质子辐照前后增强型Cascode结构AlGaN/GaN HEMT器件栅泄漏电流曲线
Figure 4. Gate leakage current profile of AlGaN/GaN HEMT devices with enhanced Cascode structure before and after proton irradiation.
图 5 质子辐照前后耗尽型AlGaN/GaN HEMT器件阈值电压及跨导曲线
Figure 5. Threshold voltage and transconductance curve of depleted AlGaN/GaN HEMT devices before and after proton irradiation.
图 6 质子辐照前后耗尽型AlGaN/GaN HEMT器件栅泄漏电流曲线
Figure 6. Gate leakage current profile of depleted AlGaN/GaN HEMT devices before and after proton irradiation.
图 7
${}_{}{}^{60}\rm{C}\rm{o}~\rm{\gamma }$ 射线辐照前后增强型Cascode结构AlGaN/GaN HEMT器件阈值电压及跨导曲线Figure 7. Threshold voltage and transconductance curve of AlGaN/GaN HEMT devices of enhanced Cascode structure before and after
${}_{}{}^{60}\rm{C}\rm{o}~\rm{\gamma }$ -ray irradiation.
图 8 增强型Cascode结构内部等效电路图
Figure 8. Internal equivalent circuit diagram of enhanced Cascode structure.
图 9 器件切片分析结果示意图 (a)增强型硅基MOS管; (b)耗尽型GaN晶体管
Figure 9. Schematic diagram of device slice analysis results: (a) Reinforced silicon-based MOS transistors; (b) depletion-type GaN transistors.
图 10 级联硅基MOS管中的电离能损和非电离能损随深度的变化
Figure 10. Ionization and non-ionization loss in cascaded silicon MOS transistors vary with depth.
图 11 级联耗尽型AlGaN/GaN HEMT中的电离能损和非电离能损随深度的变化
Figure 11. Ionization and non-ionization losses in cascaded depleted AlGaN/GaN HEMT vary with depth.
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[1] Chen Z W, Yue S Z, Peng C, Zhang Z G, Liu C, Wang L, Huang Y M, Huang Y, He Y J, Zhong X L, Lei Z F 2021 IEEE Trans. Nucl. Sci. 64 118
[2] Chen K J, Häberlan O, Lidwo A, Tsai C L, Ueda T, Uemoto Y, Wu Y 2017 IEEE Trans. Electron. Dev. 64 779
Google Scholar
[3] Karmarkar A P, Jun B, Fleetwood D M, Schrimpf R D, Weller R A, White B D, Brillson L J, Mishra U K 2004 IEEE Trans. Nucl. Sci. 51 3801
Google Scholar
[4] 张志荣, 房玉龙, 尹甲运, 郭艳敏, 王波, 王元刚, 李佳, 芦伟立, 高楠, 刘沛, 冯志红 2018 67 076801
Google Scholar
Zhang Z R, Fang Y L, Yin J Y, Guo Y M, Wang B, Wang Y G, Li J, Lu W L, Gao N, Liu P, Feng Z H 2018 Acta Phys. Sin. 67 076801
Google Scholar
[5] Roy T, Zhang E X, Puzyrev Y S, Fleetwood D M, Schrimpf R D, Choi B K, Hmelo A B, Pantelides S T 2001 IEEE Trans. Nucl. Sci. 57 3060
[6] Wu Y F, Kapolnek D, Ibbetson J P, Parikh P, Keller B P, Mishra U K 2001 IEEE Trans. Electron. Dev. 48 586
Google Scholar
[7] Jun B, Subramanian S 2001 IEEE Trans. Electron. Dev. 48 2250
[8] Gu W P, Hao Y, Yang L A 2010 Phys. Status Solidi C 7 1991
Google Scholar
[9] Keum D M, Sung H, Kim H 2017 IEEE Trans. Nucl. Sci. 64 258
Google Scholar
[10] Wan X, Baker O K, McCurdy M W, Zhang E X, Zafrani M, Wainwright S P, Xu J, Bo H L, Reed R A, Fleedwood D M, Ma T P 2017 IEEE Trans. Nucl. Sci. 64 253
Google Scholar
[11] 吕玲, 林正兆, 郭红霞, 潘霄宇, 严肖瑶 2021 现代应用物理 12 603
Lv L, Lin Z Z, Guo H X, Pan X Y, Yan X Y 2021 Modern Appl. Phys. 12 603
[12] Floriduz A, Devine J D 2020 Microelectron. Reliab. 110 113656
Google Scholar
[13] Meneghini M, Tajalli A, Moens P, Banerjee A, Stockman A, Tack M, Gerardin S, Bagatin M, Paccagnella A, Zanoni E, Meneghesso G 2017 IEEE Xplore. Res. Appl. 17 753
[14] Keum D M, Cha H, Kim H 2015 IEEE Trans. Nucl. Sci. 62 3362
Google Scholar
[15] Aditya K, Silvestri M, Beck M J, Dixit S K, Ronald D, Reed R A, Fleetwood D M, Shen L, Mishra U K 2009 IEEE Trans. Nucl. Sci. 56 3192
Google Scholar
[16] Patrick E, Law M E, Lu L, Cuervo C V, Xi Y Y, Ren F, Pearton S J 2013 IEEE Trans. Nucl. Sci. 60 4103
Google Scholar
[17] Kim H Y, Lo C F, Liu L, Ren F, Kim J, Pearton J S 2012 Appl. Phys. Lett. 100 1791
[18] 伍文俊, 兰雪梅 2020 电子技术应用 1 22
Wu W J, Lan X M 2020 Appl. Electron. Tech. 1 22
[19] 施敏, 李明逵 著 (王明湘, 赵鹤鸣 译) 2021 半导体器件物理与工艺 (第三版) (苏州: 苏州大学出版社) 第170—176页
Shi M, Li M K (translated by Wang M X, Zhao H M) 2021 Semiconductor Devices Physics and Technology (3rd Ed.) (Suzhou: Soochow University Press) pp170–176 (in Chinese)
[20] 唐常钦, 王多为, 龚敏, 马瑶, 杨治美 2021 电子与封装 21 080402
Tan C Q, Wang D W, Gong M, Ma Y, Yang Z M 2021 Electron. Packag. 21 080402
[21] Schwank J R, Shaneyfelt M R, Feeltwood D M 2008 IEEE Trans. Nucl. Sci. 55 1833
Google Scholar
[22] Rajan S, Xing H, Denbaars S, Jena D 2004 Appl. Phys. Lett. 84 1591
Google Scholar
[23] 高文钰, 严荣良, 余学峰, 任迪远, 范隆 1992 半导体学报 13 475
Gao W Y, Yan R L, Yu X F, Ren D Y, Fan L 1992 J. Semiconduct. 13 475
[24] 吕玲, 张进成, 李亮, 马晓华, 曹艳荣, 郝跃 2012 61 057202
Google Scholar
Lv L, Zhang J C, Li L, Ma X H, Cao Y R, Hao Y 2012 Acta Phys. Sin. 61 057202
Google Scholar
[25] Smith M D, O’ Mahony D, Vitobello F, Muschitiello M, Costantino A, Barnes A R, Parbrook P J 2016 Semicond. Sci. Technol. 31 025008
Google Scholar
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