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Cao Yang, Xi Kai, Xu Yan-Nan, Li Mei, Li Bo, Bi Jin-Shun, Liu Ming. Total ionizing dose effects of γ and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell. Acta Physica Sinica,
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Chen Qian, Ma Ying-Qi, Chen Rui, Zhu Xiang, Li Yue, Han Jian-Wei. Characteristics of latch-up current of dose rate effect by laser simulation. Acta Physica Sinica,
2019, 68(12): 124202.
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Li Xiao-Long, Lu Wu, Wang Xin, Guo Qi, He Cheng-Fa, Sun Jing, Yu Xin, Liu Mo-Han, Jia Jin-Cheng, Yao Shuai, Wei Xin-Yu. Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods. Acta Physica Sinica,
2018, 67(9): 096101.
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Zheng Qi-Wen, Cui Jiang-Wei, Wang Han-Ning, Zhou Hang, Yu De-Zhao, Wei Ying, Su Dan-Dan. Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process. Acta Physica Sinica,
2016, 65(7): 076102.
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Ma Wu-Ying, Lu Wu, Guo Qi, He Cheng-Fa, Wu Xue, Wang Xin, Cong Zhong-Chao, Wang Bo, Maria. Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator. Acta Physica Sinica,
2014, 63(2): 026101.
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica,
2013, 62(19): 196104.
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Wang Feng, Zhao Zheng-Yu, Chang Shan-Shan, Ni Bin-Bin, Gu Xu-Dong. Raytracing of extreamely low frequency waves radiated from ionospheric artificial modulation at low latitude. Acta Physica Sinica,
2012, 61(19): 199401.
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Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing. Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica,
2012, 61(24): 246101.
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Chen Guo-Yun, Xin Yong, Huang Fu-Cheng, Wei Zhi-Yong, Lei Sheng-Jie, Huang San-Bo, Zhu Li, Zhao Jing-Wu, Ma Jia-Yi. Performances of a boron-lined ionization chamber used in neutron/-ray mixed field of reactors. Acta Physica Sinica,
2012, 61(8): 082901.
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Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2011, 60(6): 068702.
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Wang Yi-Yuan, Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Gao Bo. Degradation and dose rate effects of bipolar linearregulator on ionizing radiation. Acta Physica Sinica,
2011, 60(9): 096104.
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He Bao-Ping, Yao Zhi-Bin. Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment. Acta Physica Sinica,
2010, 59(3): 1985-1990.
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Zheng Yu-Zhan, Lu Wu, Ren Di-Yuan, Wang Yi-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa. Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinica,
2009, 58(8): 5572-5577.
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Huang Yan-Ping, Qi Chun-Yuan. Measurement of refractive index profile of holey fiber using quantitative phase tomography. Acta Physica Sinica,
2006, 55(12): 6395-6398.
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He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong. Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica,
2004, 53(9): 3125-3129.
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He Bao-Ping, Wang Gui-Zhen, Zhou Hui, Gong Jian-Cheng, Luo Yin-Hong, Jiang Jing-He. Predicting NMOS device radiation response at different dose rates in γ-ray environment. Acta Physica Sinica,
2003, 52(1): 188-191.
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MU WEI-BING, CHEN PAN-XUN. MONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE. Acta Physica Sinica,
2001, 50(2): 189-192.
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ZHANG TING-QING, LIU CHUAN-YANG, LIU JIA-LU, WANG JIAN-PING, HUANG ZHI, XU NA-JUN, HE BAO-PING, PENG HONG-LUN, YAO YU-JUAN. RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE. Acta Physica Sinica,
2001, 50(12): 2434-2438.
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GUO HONG-XIA, CHEN YU-SHENG, ZHANG YI-MEN, WU GUO-RONG, ZHOU HUI, GUAN YING, HAN FU-BIN, GONG JIAN-CHENG. USING MULTIPLE PARALLEL PLATE ALUMINUM IONIZATION CHAMBER FOR DETERMINING DOSE DISTRIBUTION AT AND NEAR THE INTERFACE OF DIFFERENT MATERIALS AND ITS MONTE CARLO SIMULATION. Acta Physica Sinica,
2001, 50(8): 1545-1548.
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1936, 2(1): 1-9.
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