Influence of quantum wells on the quantum efficiency of GaAs solar cells

Ding Mei-Bin; Lou Chao-Gang; Wang Qi-Long; Sun Qiang

doi:10.7498/aps.63.198502

Abstract

Influences of InGaAs/GaAsP quantum wells on the quantum efficiency of GaAs solar cells are investigated. In addion of extending the absorption spectrum from 890 nm to 1000 nm, introduction of quantum wells has important effects on the quantum efficiency below 890 nm. In the range of shorter wavelengths(<680 nm), the GaAs control cells have higher quantum efficiencies, while in the longer wavelengths (680-890 nm), the quantum well solar cells have higher quantum efficiencies. This phenomenon can be explained by the difference in the absorption coefficients of quantum well structure and GaAs materials.

Keywords:

Authors and contacts

1.
School of Electronic Science & Applied Physics, HeFei University of Technology, Hefei 230009, China;
2.
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
3.
Tianjin Institute of Power Sources, Tianjin 300384, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No.60976047), the National High-tech R&D Program of China (Grant No. 2007AA05Z435), and the Natural Science Foundation of Jiangsu Province, China(Grant No.BK2011033).

References

[1]	Barnham K W J, Ballard I, Barnes J, Connolly J, Griffin P, Kluftinger B, Nelson J, Tsui E, Zachariou A 1997 Appl. Surf. Sci. 113-114 722
[2]	Barnham K W J, Connolly J P, Griffin P, Haarpaintner G, Nelson J, Tsui E, Zachariou A, Osborne J 1996 J. Appl. Phys. 80 1201
[3]	Ekins-Daukes N J, Barnham K W J, Connolly J P 1999 Appl. Phys. Letts. 75 4195
[4]	Zhao B J, Chen X, Ren Z W, Tong J H, Wang X F, Li D W, Zhuo X J, Zhang J, Yi H X, Li S T 2013 Chin. Phys. B 22 088401
[5]	Mazzer M, Barnham K W J, Ballard I M, Bessiere A, Ioannides A, Johnson D C, Lynch M C, Tibbits T N D, Roberts J S, Hill G, Calder C 2006 Thin Solid Films 511-512 76
[6]	Zhang X B, Wang X L, Xiao H L, Yang C B, Hou Q F, Yin H B, Chen H, Wang Z G 2011 Chin. Phys. B 20 028402
[7]	Lou C G, Sun Q, Xu J, Zhang X B, Lei W, Wang B P, Chen W J, Qiao Z X 2006 Chin. Phys. Letters 23 247
[8]	Lou C G, Yan T, Sun Q, Xu J, Zhang X B, Lei W 2008 Chinese Journal of Semiconductors 29 2088
[9]	Paxman M, Nelson J, Braun B, Connolly J, Barnham K W J 1993 J. Appl. Phys. 74 614
[10]	NREL, Reference Solar Spectral Irradiance: ASTM G-173
[11]	Hamaker H C 1985 J. Appl. Phys. 58 2344
[12]	Casey H C 1975 J. Appl. Phys. 46 250
[13]	Kailuweit P, Kellenbenz R, Philipps S P, Guter W, Bett A W, Dimroth F 2010 J. Appl. Phys. 107 064317
[14]	Miller D A B, Chemla D S, Damen T C, Gossard A C Wiegmann W 1985 Physical Review B 32 1043

Cited By

[1]	Barnham K W J, Ballard I, Barnes J, Connolly J, Griffin P, Kluftinger B, Nelson J, Tsui E, Zachariou A 1997 Appl. Surf. Sci. 113-114 722
[2]	Barnham K W J, Connolly J P, Griffin P, Haarpaintner G, Nelson J, Tsui E, Zachariou A, Osborne J 1996 J. Appl. Phys. 80 1201
[3]	Ekins-Daukes N J, Barnham K W J, Connolly J P 1999 Appl. Phys. Letts. 75 4195
[4]	Zhao B J, Chen X, Ren Z W, Tong J H, Wang X F, Li D W, Zhuo X J, Zhang J, Yi H X, Li S T 2013 Chin. Phys. B 22 088401
[5]	Mazzer M, Barnham K W J, Ballard I M, Bessiere A, Ioannides A, Johnson D C, Lynch M C, Tibbits T N D, Roberts J S, Hill G, Calder C 2006 Thin Solid Films 511-512 76
[6]	Zhang X B, Wang X L, Xiao H L, Yang C B, Hou Q F, Yin H B, Chen H, Wang Z G 2011 Chin. Phys. B 20 028402
[7]	Lou C G, Sun Q, Xu J, Zhang X B, Lei W, Wang B P, Chen W J, Qiao Z X 2006 Chin. Phys. Letters 23 247
[8]	Lou C G, Yan T, Sun Q, Xu J, Zhang X B, Lei W 2008 Chinese Journal of Semiconductors 29 2088
[9]	Paxman M, Nelson J, Braun B, Connolly J, Barnham K W J 1993 J. Appl. Phys. 74 614
[10]	NREL, Reference Solar Spectral Irradiance: ASTM G-173
[11]	Hamaker H C 1985 J. Appl. Phys. 58 2344
[12]	Casey H C 1975 J. Appl. Phys. 46 250
[13]	Kailuweit P, Kellenbenz R, Philipps S P, Guter W, Bett A W, Dimroth F 2010 J. Appl. Phys. 107 064317
[14]	Miller D A B, Chemla D S, Damen T C, Gossard A C Wiegmann W 1985 Physical Review B 32 1043

[1]	Liu Heng, Li Ye, Du Meng-Chao, Qiu Peng, He Ying-Feng, Song Yi-Meng, Wei Hui-Yun, Zhu Xiao-Li, Tian Feng, Peng Ming-Zeng, Zheng Xin-He. Atomic layer deposition of AlGaN alloy and its application in quantum dot sensitized solar cells. Acta Physica Sinica, 2023, 72(13): 137701. doi: 10.7498/aps.72.20230113
[2]	Li Xu-Dong, Jiang Zeng-Gong, Gu Qiang, Zhang Meng, Lin Guo-Qiang, Zhao Ming-Hua, Guo Li. Cs-Te photocathode preparation with Te intermittent and Cs continuous deposition based on improved preparation success rate and quantum efficiency. Acta Physica Sinica, 2022, 71(17): 178501. doi: 10.7498/aps.71.20220818
[3]	Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903. doi: 10.7498/aps.66.067903
[4]	Zhao Feng-Qi, Zhang Min, Li Zhi-Qiang, Ji Yan-Ming. Effects of optical phonon and built-in electric field on the binding energy of bound polarons in a wurtzite In0.19Ga0.81N/GaN quantum well. Acta Physica Sinica, 2014, 63(17): 177101. doi: 10.7498/aps.63.177101
[5]	Wang Hai-Xiao, Zheng Xin-He, Wu Yuan-Yuan, Gan Xing-Yuan, Wang Nai-Ming, Yang Hui. Well layer design for 1eV absorption band edge of GaInAs/GaNAs super-lattice solar cell. Acta Physica Sinica, 2013, 62(21): 218801. doi: 10.7498/aps.62.218801
[6]	Chen Ai-Xi, Chen Yuan, Deng Li, Kuang Yun-Feng. Spontaneously generated coherence induced transparency in an asymmetric semiconductor quantum well. Acta Physica Sinica, 2012, 61(21): 214204. doi: 10.7498/aps.61.214204
[7]	Su An, Gao Ying-Jun. Light propagation characteristics of one-dimensional photonic crystal with double-barrier quantum well. Acta Physica Sinica, 2012, 61(23): 234208. doi: 10.7498/aps.61.234208
[8]	Lei Xiao-Li, Wang Da-Wei, Liang Shi-Xiong, Wu Zhao-Xin. Wavefunction and Fourier coefficients of excitons in quantum wells: computation and application. Acta Physica Sinica, 2012, 61(5): 057803. doi: 10.7498/aps.61.057803
[9]	Zhang Yun-Yan, Fan Guan-Han. Theoretical study of the effect of changes in the number of quantum wells of dual-wavelength LED. Acta Physica Sinica, 2011, 60(7): 078504. doi: 10.7498/aps.60.078504
[10]	Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang. Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes. Acta Physica Sinica, 2011, 60(6): 067301. doi: 10.7498/aps.60.067301
[11]	Zhao Jing, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan, Zhang Jun-Ju, Shi Feng, Cheng Hong-Chang, Cui Dong-Xu. Research on quantum efficient fitting and structure of high performance transmission-mode GaAs photocathode. Acta Physica Sinica, 2011, 60(10): 107802. doi: 10.7498/aps.60.107802
[12]	Guo Xiang-Yang, Du Xiao-Qing, Chang Ben-Kang, Qiao Jian-Liang, Qian Yun-Sheng, Wang Xiao-Hui. Quantum efficiency recovery of reflection-mode NEA GaN photocathode. Acta Physica Sinica, 2011, 60(1): 017903. doi: 10.7498/aps.60.017903
[13]	Qiao Jian-Liang, Chang Ben-Kang, Du Xiao-Qing, Niu Jun, Zou Ji-Jun. Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode. Acta Physica Sinica, 2010, 59(4): 2855-2859. doi: 10.7498/aps.59.2855
[14]	Jiang Wen-Long, Meng Zhao-Hui, Cong Lin, Wang Jin, Wang Li-Zhong, Han Qiang, Meng Fan-Chao, Gao Yong-Hui. The role of magnetic fields on the efficiency of OLED of double quantum well structures. Acta Physica Sinica, 2010, 59(9): 6642-6646. doi: 10.7498/aps.59.6642
[15]	Chen Xiao-Bo, Yang Guo-Jian, Zhang Chun-Lin, Li Yong-Liang, Liao Hong-Bo, Zhang Yun-Zhi, Chen Luan, Wang Ya-Fei. Infrared quantum-cutting analysis of Er0.3Gd0.7VO4 crystal for solar cell application. Acta Physica Sinica, 2010, 59(11): 8191-8199. doi: 10.7498/aps.59.8191
[16]	Niu Jun, Yang Zhi, Chang Ben-Kang, Qiao Jian-Liang, Zhang Yi-Jun. Study on the model of quantum efficiency of reflective varied doping GaAs photocathode. Acta Physica Sinica, 2009, 58(7): 5002-5006. doi: 10.7498/aps.58.5002
[17]	Du Xiao-Qing, Chang Ben-Kang. Revision of quantum efficiency formula for negative electron affinity photocathodes. Acta Physica Sinica, 2009, 58(12): 8643-8650. doi: 10.7498/aps.58.8643
[18]	Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing. Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica, 2007, 56(6): 3453-3457. doi: 10.7498/aps.56.3453
[19]	Zou Ji-Jun, Chang Ben-Kang, Yang Zhi. Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica, 2007, 56(5): 2992-2997. doi: 10.7498/aps.56.2992
[20]	Chang Jun-Tao, Wu Ling-An. Absolute self-calibration of the quantum efficiency of single-photon detectors. Acta Physica Sinica, 2003, 52(5): 1132-1136. doi: 10.7498/aps.52.1132

Catalog

Vol. 63, Issue 19 - 2014-10-05

Metrics

Abstract views: 7802
PDF Downloads: 480
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板