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To explore the structural feature of high performance transmission-mode GaAs photocathode, the optical properties and shortwave limitation for the transmission-mode quantum efficient formula is modified. By using the modified formula, a high quantum efficient (43%) curve of ITT is well fitted. A series of structural parameters is obtained with in a relative error less than 5%, which indicates that the thickness of the Ga1-xAlxAs window layer is 0.30.5 m, the Al mole value is 0.7, and the thickness of the GaAs active layer is 1.11.4 m. In addition, an optimized structure for the uniform-doping transmission-mode GaAs photocathode is suggested based on the fitted results. When the thickness of the Ga1-xAlxAs (x=0.7) layer and the GaAs layer are 0.4 m and 1.11.5 m respectively, the integral sensitivity can exceed 2350 A/lm.
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Keywords:
- transmission-mode GaAs photocathode /
- quantum efficient /
- integral sensitivity /
- optical properties
[1] Guo L J, Wstenberg J P, Andreyev O, Michael B, Martin A 2005 Acta Phys. Sin. 54 3200 (in Chinese)[郭立俊、 Wustenberg J P、 Andreyev O、 Michael B、 Martin A 2005 54 3200]
[2] [3] Liu Z, Machuca F, Pianetta P, Spicer W E, Pease R F W 2004 Appl. Phys. Lett. 85 1541
[4] [5] Schneider J E, Sen P, Pickard D S 1998 J. Vac. Sci. Tech. B 16 3192
[6] Antypas G A, Edgecumbe J 1975 Appl. Phys. Lett. 26 371
[7] [8] Antypas G A, Escher J S, Edgecumbe J 1978 J. Appl. Phys. 49 4301
[9] [10] Andr J P, Guittard P, Hallais J 1981 J. Cryst. Growth 55 235
[11] [12] Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541
[13] [14] Arlynn S, Keith P, Roger S 2002 New Developments in Photodetection 3rd Beaune Conference Beaune, France, June 1721, 2002
[15] [16] [17] Du X Q, Chang B K 2009 Acta Phys. Sin. 58 8643 (in Chinese)[杜晓晴、 常本康 2009 58 8643]
[18] [19] Tang J F, Gu P F, Liu X, Li H F 2006 Modern Optical Thin Film Technology (Zhejiang: Zhejiang University Press) p20 (in Chinese)[唐晋发、 顾培夫、 刘 旭、 李海峰 2006 现代光学薄膜技术(浙江: 浙江大学出版社)第20页]
[20] Liu Y Z, Wang Z C, Dong Y Q 1995 Electron Emission and Photocathode (Beijing: Beijing University of Science and Technology Press) p327 (in Chinese)[刘元震、 王仲春、 董亚强 1995 电子发射与光电阴极(北京: 北京理工大学出版社)第327页]
[21] [22] [23] Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese)[邹继军、 常本康、 杨 智 2007 56 2992]
[24] Fang R Z, Liu Y F 1988 Optoelectronic Devices (Beijing: National Defence Industrial Press) p159 (in Chinese)[方如章、 刘玉凤 1988 光电器件(北京:国防工业出版社)第159页]
[25] [26] Wu J Z, Ye G R 1992 Optical Radiation Measurement (Beijing: Mechanic Industry Press) p34 (in Chinese)[吴继宗、 叶关荣 1992 光辐射测量(北京:机械工业出版社)第34页]
[27] [28] [29] Liu S C 1991 Optical Radiation Measurement Technology (Beijing: National Defence Industrial Press) p78 (in Chinese)[刘世才1991 光辐射测量技术(北京:国防工业出版社)第78页]
[30] Liu L, Chang B K 2004 Opt. Eng. 43 946
[31] [32] [33] Aspnes D E, Kelso S M, Logan R A, R Bhat 1986 J. Appl. Phys. 60 754
[34] [35] Zou J J, 2007 Ph. D. dissertation (Nanjing: Nanjing University of Science and Technology)(in Chinese)[邹继军 2007 博士学位论文(南京:南京理工大学)]
[36] Yang Z, Zou J J, Chang B K 2010 Acta Phys. Sin. 59 4290 (in Chinese)[杨 智、 邹继军、 常本康 2010 59 4290]
[37] -
[1] Guo L J, Wstenberg J P, Andreyev O, Michael B, Martin A 2005 Acta Phys. Sin. 54 3200 (in Chinese)[郭立俊、 Wustenberg J P、 Andreyev O、 Michael B、 Martin A 2005 54 3200]
[2] [3] Liu Z, Machuca F, Pianetta P, Spicer W E, Pease R F W 2004 Appl. Phys. Lett. 85 1541
[4] [5] Schneider J E, Sen P, Pickard D S 1998 J. Vac. Sci. Tech. B 16 3192
[6] Antypas G A, Edgecumbe J 1975 Appl. Phys. Lett. 26 371
[7] [8] Antypas G A, Escher J S, Edgecumbe J 1978 J. Appl. Phys. 49 4301
[9] [10] Andr J P, Guittard P, Hallais J 1981 J. Cryst. Growth 55 235
[11] [12] Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541
[13] [14] Arlynn S, Keith P, Roger S 2002 New Developments in Photodetection 3rd Beaune Conference Beaune, France, June 1721, 2002
[15] [16] [17] Du X Q, Chang B K 2009 Acta Phys. Sin. 58 8643 (in Chinese)[杜晓晴、 常本康 2009 58 8643]
[18] [19] Tang J F, Gu P F, Liu X, Li H F 2006 Modern Optical Thin Film Technology (Zhejiang: Zhejiang University Press) p20 (in Chinese)[唐晋发、 顾培夫、 刘 旭、 李海峰 2006 现代光学薄膜技术(浙江: 浙江大学出版社)第20页]
[20] Liu Y Z, Wang Z C, Dong Y Q 1995 Electron Emission and Photocathode (Beijing: Beijing University of Science and Technology Press) p327 (in Chinese)[刘元震、 王仲春、 董亚强 1995 电子发射与光电阴极(北京: 北京理工大学出版社)第327页]
[21] [22] [23] Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese)[邹继军、 常本康、 杨 智 2007 56 2992]
[24] Fang R Z, Liu Y F 1988 Optoelectronic Devices (Beijing: National Defence Industrial Press) p159 (in Chinese)[方如章、 刘玉凤 1988 光电器件(北京:国防工业出版社)第159页]
[25] [26] Wu J Z, Ye G R 1992 Optical Radiation Measurement (Beijing: Mechanic Industry Press) p34 (in Chinese)[吴继宗、 叶关荣 1992 光辐射测量(北京:机械工业出版社)第34页]
[27] [28] [29] Liu S C 1991 Optical Radiation Measurement Technology (Beijing: National Defence Industrial Press) p78 (in Chinese)[刘世才1991 光辐射测量技术(北京:国防工业出版社)第78页]
[30] Liu L, Chang B K 2004 Opt. Eng. 43 946
[31] [32] [33] Aspnes D E, Kelso S M, Logan R A, R Bhat 1986 J. Appl. Phys. 60 754
[34] [35] Zou J J, 2007 Ph. D. dissertation (Nanjing: Nanjing University of Science and Technology)(in Chinese)[邹继军 2007 博士学位论文(南京:南京理工大学)]
[36] Yang Z, Zou J J, Chang B K 2010 Acta Phys. Sin. 59 4290 (in Chinese)[杨 智、 邹继军、 常本康 2010 59 4290]
[37]
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