高性能透射式GaAs光电阴极量子效率拟合与结构研究

赵静; 张益军; 常本康; 熊雅娟; 张俊举; 石峰; 程宏昌; 崔东旭

doi:10.7498/aps.60.107802

摘要

为了探索高性能透射式GaAs光电阴极的特征结构,对光电阴极量子效率公式进行了光谱反射率与短波截止限的修正,并利用修正后的公式对ITT透射式GaAs光电阴极量子效率(43%)曲线进行了拟合,得到拟合相对误差小于5%时的结构参数为:窗口层Ga1-xAlxAs的厚度介于0.30.5 m,Al组分x值为0.7,发射层GaAs的厚度介于1.11.4 m.另外,根据拟合结果讨论了均匀掺杂透射式GaAs光电阴极的优化结构参数,如果光电阴极具有0.4 m厚的Ga1-xAlxAs(x=0.7)窗口层和1.11.5 m厚的GaAs发射层,则积分灵敏度可以达到2350 A/lm以上.

关键词:

Abstract

To explore the structural feature of high performance transmission-mode GaAs photocathode, the optical properties and shortwave limitation for the transmission-mode quantum efficient formula is modified. By using the modified formula, a high quantum efficient (43%) curve of ITT is well fitted. A series of structural parameters is obtained with in a relative error less than 5%, which indicates that the thickness of the Ga1-xAlxAs window layer is 0.30.5 m, the Al mole value is 0.7, and the thickness of the GaAs active layer is 1.11.4 m. In addition, an optimized structure for the uniform-doping transmission-mode GaAs photocathode is suggested based on the fitted results. When the thickness of the Ga1-xAlxAs (x=0.7) layer and the GaAs layer are 0.4 m and 1.11.5 m respectively, the integral sensitivity can exceed 2350 A/lm.

Keywords:

作者及机构信息

1.
南京理工大学电子工程与光电技术学院,南京 210094;

2.
微光夜视技术国防科技重点实验室,西安 710065;

3.
西安应用光学研究所,西安 710065

基金项目: 国家自然科学基金(批准号:60678043)、江苏省普通高校研究生科研创新计划(批准号:CX09B_096Z)和南京理工大学自主科研专项计划(批准号:2010ZYTS032)资助的课题.

Authors and contacts

1.
Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science & Technology, Nanjing 210094, China;

2.
Key Laboratory of Low Light Level Technology of COSTIND, Xi'an 710065, China;

3.
Xi'an Institute of Applied Optics, Xi'an 710065, China

参考文献

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施引文献

[1]	Guo L J, Wstenberg J P, Andreyev O, Michael B, Martin A 2005 Acta Phys. Sin. 54 3200 (in Chinese)[郭立俊、 Wustenberg J P、 Andreyev O、 Michael B、 Martin A 2005 54 3200]
[2]
[3]	Liu Z, Machuca F, Pianetta P, Spicer W E, Pease R F W 2004 Appl. Phys. Lett. 85 1541
[4]
[5]	Schneider J E, Sen P, Pickard D S 1998 J. Vac. Sci. Tech. B 16 3192
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[7]
[8]	Antypas G A, Escher J S, Edgecumbe J 1978 J. Appl. Phys. 49 4301
[9]
[10]	Andr J P, Guittard P, Hallais J 1981 J. Cryst. Growth 55 235
[11]
[12]	Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541
[13]
[14]	Arlynn S, Keith P, Roger S 2002 New Developments in Photodetection 3rd Beaune Conference Beaune, France, June 1721, 2002
[15]
[16]
[17]	Du X Q, Chang B K 2009 Acta Phys. Sin. 58 8643 (in Chinese)[杜晓晴、常本康 2009 58 8643]
[18]
[19]	Tang J F, Gu P F, Liu X, Li H F 2006 Modern Optical Thin Film Technology (Zhejiang: Zhejiang University Press) p20 (in Chinese)[唐晋发、顾培夫、刘旭、李海峰 2006 现代光学薄膜技术(浙江: 浙江大学出版社)第20页]
[20]	Liu Y Z, Wang Z C, Dong Y Q 1995 Electron Emission and Photocathode (Beijing: Beijing University of Science and Technology Press) p327 (in Chinese)[刘元震、王仲春、董亚强 1995 电子发射与光电阴极(北京: 北京理工大学出版社)第327页]
[21]
[22]
[23]	Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese)[邹继军、常本康、杨智 2007 56 2992]
[24]	Fang R Z, Liu Y F 1988 Optoelectronic Devices (Beijing: National Defence Industrial Press) p159 (in Chinese)[方如章、刘玉凤 1988 光电器件(北京:国防工业出版社)第159页]
[25]
[26]	Wu J Z, Ye G R 1992 Optical Radiation Measurement (Beijing: Mechanic Industry Press) p34 (in Chinese)[吴继宗、叶关荣 1992 光辐射测量(北京:机械工业出版社)第34页]
[27]
[28]
[29]	Liu S C 1991 Optical Radiation Measurement Technology (Beijing: National Defence Industrial Press) p78 (in Chinese)[刘世才1991 光辐射测量技术(北京:国防工业出版社)第78页]
[30]	Liu L, Chang B K 2004 Opt. Eng. 43 946
[31]
[32]
[33]	Aspnes D E, Kelso S M, Logan R A, R Bhat 1986 J. Appl. Phys. 60 754
[34]
[35]	Zou J J, 2007 Ph. D. dissertation (Nanjing: Nanjing University of Science and Technology)(in Chinese)[邹继军 2007 博士学位论文(南京:南京理工大学)]
[36]	Yang Z, Zou J J, Chang B K 2010 Acta Phys. Sin. 59 4290 (in Chinese)[杨智、邹继军、常本康 2010 59 4290]
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