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The influences of technological condition on thickness and refractive index of the SiON films preprared by plasma enhanced chemical vapor deposition and the influence of SiON/SiNx stacked film on passivation performance on P-type silicon wafer are investigatied. The results show that the refractive index of SiON film varies from 1.48 to 2.1 and thickness varies from 30-60 nm by changing the gas flow of NH3 and the gas flow ratio of N2O/SiH4. The pressure and RF power mainly affect the thickness of the film. The greater the pressure, the higher the RF power, the faster the deposition rate is and the thicker the film is. The influences of temperature on the film thickness and refractive index can be ignored. The passivation shows that the passivation performance of P-type silicon film after annealing SiON/SiNx stacked films with a gas flow ratio of N2O/SiH4 20 and 30 in the absence and the presence of NH3, is best, which the implied voltages and the lifetimes of minority carriers are 652 mV, 56.7 μs and 649 mV, 50.8 μs, respectively. The passivation effect of SiON/SiNx stacked film is superior to that of the reference SiNx film.
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Keywords:
- SiON /
- plasma enhanced chemical vapor deposition /
- rear surface passivation /
- crystalline silicon soler cell
[1] Glunz S W 2007 Adv. OptoElectron. 2007 97370
[2] Riegel S, Gloger S, Raabe B, Hahn G 2009 24th EUPVSEC Hamburg, Germany, September 21-25, 2009 p1596
[3] Chen F X, Wang L S, Xu W Y 2013 Chin. Phys. B 22 045202
[4] Jia Z N, Zhang X D, Liu Y, Wang Y F, Fan J, Liu C C, Zhao Y 2014 Chin. Phys. B 23 046106
[5] Zhao J H, Wang A H, Green M A 1999 Prog. Photovolt. 7 471
[6] Aberle A G 2000 Prog. Photovolt. 8 473
[7] Gruenbaum P E, Gan J Y, King R, Swanson R M 1990 PVSC,Conference Record of the 21st IEEE Kissimmee, Florida, May 21-25, 1990 p317
[8] Schultz O, Glunz S W, Goldschmidt J C, Lautenschlager H, Leimenstoll A, Schneiderlöchner E, Willeke G P 2004 19th EUPVSEC Paris, France, June 7-11, 2004 p604
[9] Meemongkolkiat V, Kim D S, Rohatgi A 2007 22nd EUPVSEC Milan, Italy, September 3-7, 2007 p1034
[10] Chang W L, Sun W C, Lin C H, Lan C W 2008 23rd EUPVSEC Valencia, Spain, September 1-5, 2008 p1349
[11] Li T T, Cuevas A 2009 Phys. Status Solidi (RRL) 3 160
[12] Hofmann M, Janz S, Schmidt C, Kambor S, Suwito D, Kohn N, Rentsch J, Preu R, Glunz S W 2009 Sol. Energy Mater. Sol. Cells. 93 1074
[13] Moschner J D, Henze J, Schmidt J, Hezel R 2004 Prog. Photovolt. 12 21
[14] Lenkeit B, Lauinger T, Aberle A G, Hezel R 1998 2nd WCPVSEC Vienna, Austria, July 6-10, 1998 p1434
[15] Dupuis J, Fourmond E, Nichiporuk O, Gibaja F, Lemiti M 2008 23rd EUPVSEC Valencia, Spain, September 1-5, 2008 p1633
[16] Dingemans G, Kessels E 2012 J. Vac. Sci. Technol. A 30 040802
[17] He Y, Dou Y N, Ma X G, Chen S B, Chu J H 2012 Acta Phys. Sin. 61 248102 (in Chinese) [何悦, 窦亚楠, 马晓光, 陈绍斌, 褚君浩 2012 61 248102]
[18] Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A 2010 Adv. Mater. 22 3564
[19] Maeda M, Itsumi M 1998 J. Appl. Phys. 84 5243
[20] Dupuis J, Fourmond E, Lelièvre J F, Ballutaud D, Lemiti M 2008 Thin Solid Films 516 6954
[21] Gong C F, Xi Z Q, Wang X Q, Yang D R, Que D L 2006 Acta Energ. Sol. Sin. 27 300 (in Chinese) [龚灿锋, 席珍强, 王晓泉, 杨德仁, 阙端麟 2006 太阳能学报 27 300]
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[1] Glunz S W 2007 Adv. OptoElectron. 2007 97370
[2] Riegel S, Gloger S, Raabe B, Hahn G 2009 24th EUPVSEC Hamburg, Germany, September 21-25, 2009 p1596
[3] Chen F X, Wang L S, Xu W Y 2013 Chin. Phys. B 22 045202
[4] Jia Z N, Zhang X D, Liu Y, Wang Y F, Fan J, Liu C C, Zhao Y 2014 Chin. Phys. B 23 046106
[5] Zhao J H, Wang A H, Green M A 1999 Prog. Photovolt. 7 471
[6] Aberle A G 2000 Prog. Photovolt. 8 473
[7] Gruenbaum P E, Gan J Y, King R, Swanson R M 1990 PVSC,Conference Record of the 21st IEEE Kissimmee, Florida, May 21-25, 1990 p317
[8] Schultz O, Glunz S W, Goldschmidt J C, Lautenschlager H, Leimenstoll A, Schneiderlöchner E, Willeke G P 2004 19th EUPVSEC Paris, France, June 7-11, 2004 p604
[9] Meemongkolkiat V, Kim D S, Rohatgi A 2007 22nd EUPVSEC Milan, Italy, September 3-7, 2007 p1034
[10] Chang W L, Sun W C, Lin C H, Lan C W 2008 23rd EUPVSEC Valencia, Spain, September 1-5, 2008 p1349
[11] Li T T, Cuevas A 2009 Phys. Status Solidi (RRL) 3 160
[12] Hofmann M, Janz S, Schmidt C, Kambor S, Suwito D, Kohn N, Rentsch J, Preu R, Glunz S W 2009 Sol. Energy Mater. Sol. Cells. 93 1074
[13] Moschner J D, Henze J, Schmidt J, Hezel R 2004 Prog. Photovolt. 12 21
[14] Lenkeit B, Lauinger T, Aberle A G, Hezel R 1998 2nd WCPVSEC Vienna, Austria, July 6-10, 1998 p1434
[15] Dupuis J, Fourmond E, Nichiporuk O, Gibaja F, Lemiti M 2008 23rd EUPVSEC Valencia, Spain, September 1-5, 2008 p1633
[16] Dingemans G, Kessels E 2012 J. Vac. Sci. Technol. A 30 040802
[17] He Y, Dou Y N, Ma X G, Chen S B, Chu J H 2012 Acta Phys. Sin. 61 248102 (in Chinese) [何悦, 窦亚楠, 马晓光, 陈绍斌, 褚君浩 2012 61 248102]
[18] Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A 2010 Adv. Mater. 22 3564
[19] Maeda M, Itsumi M 1998 J. Appl. Phys. 84 5243
[20] Dupuis J, Fourmond E, Lelièvre J F, Ballutaud D, Lemiti M 2008 Thin Solid Films 516 6954
[21] Gong C F, Xi Z Q, Wang X Q, Yang D R, Que D L 2006 Acta Energ. Sol. Sin. 27 300 (in Chinese) [龚灿锋, 席珍强, 王晓泉, 杨德仁, 阙端麟 2006 太阳能学报 27 300]
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