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The design and fabrication of multilayer antireflection (AR) coating based on plasma enhanced chemical vapor deposition (PECVD) is studied for its applications in optoelectronic devices. Deposition conditions for obtaining SiO2/SiNx thin films with large refractive index difference is determined through systematic study of factors influencing the refractive index of deposited SiNx. Four-layer SiO2/SiNx AR coating is designed to exhibit a reflectivity of less than 10-4 over 70 nm bandwidth. Reflectivity of the thin film structure at the center wavelength of 1550 nm remains less than 5×10-4 when the thickness deviation of any single layer is within ±5 nm from the designed value. Based on the simulation results, SiO2/SiNx multilayer AR coating is deposited on the end facet of a Fabry-Perot laser. By analyzing the output spectra of the laser, the residual reflectivity of the AR coating is determined to be on the order of 10-4 over the wavelength range of 1535—1565 nm.
[1] Mukai T, Yamamoto Y 1981 IEEE J. Quantum. Elect. QE-17 1028
[2] Sun C Z, Xiong B, Wang J, Cai P F, Xu J M, Huang J, Yuan H, Zhou Q W, Luo Y 2008 J. Lightwave Technol. 26 1464
[3] Saitoh T, Mukai T, Mikami O 1985 J. Lightwave Technol. LT-3 288
[4] Eisenstein G 1984 Bell Syst. Tech. J. 63 357
[5] Ji A L, Ma L B, Liu C, Wang Y Q 2004 Acta Phys. Sin. 53 3818 (in Chinese) [纪爱玲、马利波、刘 诚、王永谦 2004 53 3818]
[6] Wang Y Y, Guan X D, Ma J R 1991 Basic Technology of Integrated Circuit (Beijing: Higher Education Press) p253 (in Chinese)[王阳元、关旭东、马俊如 1991 集成电路工艺基础 (北京: 高等教育出版社) 第253页]
[7] Braun D M, Jungerman R L 1995 Opt. Lett. 20 1154
[8] Yu W,Liu L H, Hou H H, Ding X C, Han L, Fu G S 2003 Acta Phys. Sin. 52 687 (in Chinese) [于 威、刘丽辉、侯海虹、丁学成、韩 理、傅广生 2003 52 687]
[9] Wu Q X, Chen G H, Yu Y, Luo Z Z 2007 J. Funct. Mater. 5 703[吴清鑫、陈光红、于 映、罗仲梓 2007 功能材料 5 703]
[10] Lee J, Tanaka T, Sasaki S, Uchiyama S, Tsuchiya M, Kamiya T 1998 J. Lightwave Technol. 16 884
[11] Kaminow I P, Eisenstein G, Stulz L W 1983 IEEE J. Quantum Electron. QE-19 493
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[1] Mukai T, Yamamoto Y 1981 IEEE J. Quantum. Elect. QE-17 1028
[2] Sun C Z, Xiong B, Wang J, Cai P F, Xu J M, Huang J, Yuan H, Zhou Q W, Luo Y 2008 J. Lightwave Technol. 26 1464
[3] Saitoh T, Mukai T, Mikami O 1985 J. Lightwave Technol. LT-3 288
[4] Eisenstein G 1984 Bell Syst. Tech. J. 63 357
[5] Ji A L, Ma L B, Liu C, Wang Y Q 2004 Acta Phys. Sin. 53 3818 (in Chinese) [纪爱玲、马利波、刘 诚、王永谦 2004 53 3818]
[6] Wang Y Y, Guan X D, Ma J R 1991 Basic Technology of Integrated Circuit (Beijing: Higher Education Press) p253 (in Chinese)[王阳元、关旭东、马俊如 1991 集成电路工艺基础 (北京: 高等教育出版社) 第253页]
[7] Braun D M, Jungerman R L 1995 Opt. Lett. 20 1154
[8] Yu W,Liu L H, Hou H H, Ding X C, Han L, Fu G S 2003 Acta Phys. Sin. 52 687 (in Chinese) [于 威、刘丽辉、侯海虹、丁学成、韩 理、傅广生 2003 52 687]
[9] Wu Q X, Chen G H, Yu Y, Luo Z Z 2007 J. Funct. Mater. 5 703[吴清鑫、陈光红、于 映、罗仲梓 2007 功能材料 5 703]
[10] Lee J, Tanaka T, Sasaki S, Uchiyama S, Tsuchiya M, Kamiya T 1998 J. Lightwave Technol. 16 884
[11] Kaminow I P, Eisenstein G, Stulz L W 1983 IEEE J. Quantum Electron. QE-19 493
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