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利用等离子体增强化学气相沉积技术,在高氢稀释条件下,研究不同激发频率对纳米晶硅薄膜生长特性的影响.剖面透射电子显微镜(TEM)分析结果显示,不同激发频率下制备的纳米晶硅薄膜晶化区均呈锥状结构生长,但13.56 MHz激发频率下制备的纳米晶硅薄膜最初生长阶段存在非晶态孵化层,即纳米晶硅薄膜的形成经历了由非晶态孵化层到晶态结构层的转变.而高激发频率(40.68 MHz)下硅纳米晶则能直接在非晶态衬底上生长形成.Raman谱和红外吸收谱测量结果表明高激发频率(40.68 MHz)下制备的纳米晶硅薄膜不但具有较高
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关键词:
- 等离子体增强化学气相沉积 /
- 高氢稀释 /
- 纳米晶硅
Nanocrystalline silicon films were prepared from SiH4 highly diluted with hydrogen by plasma enhanced chemical vapor deposition. The influence of excitation frequency on their growth properties was investigated. The cross-section transmisson electron microscopy images show that all the films grow with certain fastigiated structure in the crystalline region. However, the films deposited at 13.56 MHz undergo a transition from amorphous incubation layer to crystalline structure. In contrast, for the films deposited at a high excitation frequency (40.68 MHz), nanocrystalline silicon grains can directly grow on the amorphous substrates. Furthermore, the results of Raman spectra and Fourier transform infrared spectroscopy manifest that the nanocrystalline silicon films deposited at high excitation frequency (40.68 MHz) possess high crystalline fraction, low hydrogen content and small microstructure factor.-
Keywords:
- VHF-plasma enhanced chemical vapor deposition /
- high hydrogen dilution /
- nanocrystalline silicon
[1] Peng W B, Liu S Y, Xiao H B, Zhang C S, Shi M J, Zeng X B, Xu Y Y, Kong G L, Yu Y D 2009 Acta Phys. Sin. 58 5716 (in Chinese) [彭文博、刘石勇、肖海波、张长沙、石明吉、曾湘波、徐艳月、孔光临、俞育德 2009 58 5716]
[2] Li J S, Wang J X, Yin M, Gao P Q, Chen Q, Li Y L, He D Y 2008 J. Cryst. Growth 310 4340
[3] Huang S Y, Wang L, Ganguly G, Xu J, Huang X F, Matsuda A, Chen K J 2000 J. Non-Cryst. Solids 266—269 347
[4] Rui Y J, Chen D Y, Xu J, Zhang Y J, Yang L, Mei J X, Ma Z Y, Cen Z H, Li W, Xu L, Huang X F, Chen K J 2005 J. Appl. Phys. 98 033532
[5] Cabarrocas P R, Hamma S 1999 Thin Solid Films 23—26 337
[6] Amanatides E, Mataras D, Rapakoulias D E 2001 J. Appl. Phys. 90 5799
[7] Zhou J H, Ikuta K, Yasuda T, Umeda T, Yamasaki S, Tanaka K 1997 Appl. Phys. Lett. 71 1997
[8] Houben L, Luysberg M, Hapke P, Carius R, Finger F, Wagner 1998 Philos. Mag. A 77 1447
[9] Lucovsky G, Nemanich R J, Knights J C 1978 Phys. Rev. B 19 2064
[10] Manfredotti C, Fizzotti F, Boevo M, Pastorino P, Polesell P, Vittone E 1994 Phys. Rev. B 50 18046
[11] Han X Y, Geng X H, Hou G F, Zhang X D, Li G J,Yuan Y J, Wei C C, Sun J, Zhang D K, Zhao Y 2009 Acta Phys. Sin. 58 1344 (in Chinese) [韩晓艳、耿新华、侯国付、张晓丹、李贵君、袁育杰、魏长春、孙 建、张德坤、赵 颖2009 58 1344]
[12] Xu J, Chen K J, Feng D, Miyazaki S, Hirose M 1996 Solid State Commun. 99 269
[13] Gu J, Zhu M, Wang L, Liu F, Zhou B, Zhou Y, Ding K, Li G 2005 J. Appl. Phys. 98 093505
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[1] Peng W B, Liu S Y, Xiao H B, Zhang C S, Shi M J, Zeng X B, Xu Y Y, Kong G L, Yu Y D 2009 Acta Phys. Sin. 58 5716 (in Chinese) [彭文博、刘石勇、肖海波、张长沙、石明吉、曾湘波、徐艳月、孔光临、俞育德 2009 58 5716]
[2] Li J S, Wang J X, Yin M, Gao P Q, Chen Q, Li Y L, He D Y 2008 J. Cryst. Growth 310 4340
[3] Huang S Y, Wang L, Ganguly G, Xu J, Huang X F, Matsuda A, Chen K J 2000 J. Non-Cryst. Solids 266—269 347
[4] Rui Y J, Chen D Y, Xu J, Zhang Y J, Yang L, Mei J X, Ma Z Y, Cen Z H, Li W, Xu L, Huang X F, Chen K J 2005 J. Appl. Phys. 98 033532
[5] Cabarrocas P R, Hamma S 1999 Thin Solid Films 23—26 337
[6] Amanatides E, Mataras D, Rapakoulias D E 2001 J. Appl. Phys. 90 5799
[7] Zhou J H, Ikuta K, Yasuda T, Umeda T, Yamasaki S, Tanaka K 1997 Appl. Phys. Lett. 71 1997
[8] Houben L, Luysberg M, Hapke P, Carius R, Finger F, Wagner 1998 Philos. Mag. A 77 1447
[9] Lucovsky G, Nemanich R J, Knights J C 1978 Phys. Rev. B 19 2064
[10] Manfredotti C, Fizzotti F, Boevo M, Pastorino P, Polesell P, Vittone E 1994 Phys. Rev. B 50 18046
[11] Han X Y, Geng X H, Hou G F, Zhang X D, Li G J,Yuan Y J, Wei C C, Sun J, Zhang D K, Zhao Y 2009 Acta Phys. Sin. 58 1344 (in Chinese) [韩晓艳、耿新华、侯国付、张晓丹、李贵君、袁育杰、魏长春、孙 建、张德坤、赵 颖2009 58 1344]
[12] Xu J, Chen K J, Feng D, Miyazaki S, Hirose M 1996 Solid State Commun. 99 269
[13] Gu J, Zhu M, Wang L, Liu F, Zhou B, Zhou Y, Ding K, Li G 2005 J. Appl. Phys. 98 093505
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