脉冲激光沉积法制备高温压电薄膜0.20 BiInO3-0.80PbTiO3（已撤稿）

王伟; 唐佳伟; 王乐天; 陈小兵

doi:10.7498/aps.62.237701

摘要

采用脉冲激光沉积法制备了0.20BiInO3-0.80PbTiO3（20BI-PT）高温压电薄膜，并与0.15BiInO3-0.85PbTiO3（15BI-PT）样品进行了比较研究. X射线衍射谱显示，20BI-PT样品100峰出现了明显的劈裂，显示样品具有更高的四方对称性. FESEM图显示，20BI-PT样品中出现了部分111取向的三角形晶粒. 20BI-PT样品的铁电剩余极化（Pr）为～28 C/cm2，矫顽场（Ec）为～120 kV/cm，相较15BI-PT样品，Pr略有增加，但同时Ec也有增加. 20BI-PT样品的横向压电系数（e31，f）约为4.70.6 C/m2，和15BI-PT相比几乎一样. 介电温度谱显示，20BI-PT 样品的居里温度比15BI-PT增加了约30 ℃，达590 ℃，且介电峰没有明显的频率依赖性. Rayleigh分析显示，20BI-PT样品中内在本征因素及可翻转畴对介电非线性的贡献和15BI-PT基本相同，但是外在因素的贡献没有15BI-PT的贡献大，这可能和20BI-PT样品中晶粒111相对取向率较高有关.

关键词:

薄膜 /
脉冲激光沉积 /
铁电 /
压电

Abstract

High-temperature piezoelectric thin films of 0.20BiInO3-0.80PbTiO3 (20BI-PT) were prepared via pulsed laser deposition and investigated by comparison with 0.15BiInO3-0.85PbTiO3(15BI-PT). XRD patterns show that (100) peak of 20BI-PT has been split, indicating a higher tetragnality than in 15BI-PT. FESEM images reveal some triangular grains corresponding to [111]-oriented grains in 20BI-PT. The remanent polarization (Pr) and coercive field (Ec) of 20BI-PT are ～ 28 C/cm2 and ～120 kV/cm, respectively. It is shown that the transverse piezoelectric coefficient e31, f keeps almost the same in 20BI-PT and 15BI-PT. The temperature dependence of dielectric permittivity in 20BI-PT reveals a higher Curie temperature (590 ℃) than that in 15BI-PT and no apparent frequency dependence is detected. Rayleigh analyses are performed to identify the extrinsic contributions to dielectric nonlinearity for different x. It is seen that x=0.15 exhibits greater extrinsic contributions to dielectric nonlinearity than the other compositions.

Keywords:

作者及机构信息

1.
扬州大学物理科学与技术学院, 扬州 225002

基金项目: 国家自然科学基金（批准号：51072177）和江苏省教育厅自然科学基础研究（批准号：08KJB140011）资助的课题.

Authors and contacts

1.
College of Physical Science and Technonolgy, Yangzhou University, Yangzhou 225002, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51072177), and the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province, China (Grant No. 08KJB140011).

参考文献

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施引文献

[1]	Randall C A, Eitel R E, Stringer C, Song T H, Zhang S J, Shrout T R 2004 High Performance, High Temperature Perovskite Piezoelectric Ceramics in Piezoelectric Single Crystals edited by S. Trolier-McKinstry (The Pennsylvania State University, University Park, 2004)
[2]	Turner R C, Fuierer P A, Newnham R E, Shrout T R 1994 Appl. Acoust. 41 299
[3]	Liu P, Yang T Q, Zhang L Y 2000 Acta Phys. Sin. 49 2300 (in Chinese) [刘鹏, 杨同青, 张良莹 2000 49 2303]
[4]	Eitel R E, Randall C A, Shrout T R 2001 Jpn. J. Appl. Phys. Part 1 40 5999
[5]	Eitel R E, Randall C A, Shrout T R 2002 Jpn. J. Appl. Phys. Part 1 41 2099
[6]	Nino J C, Trolier-McKinstry S 2004 J. Mater. Res. 19 568
[7]	Wen H, Wang X, Zhong C, Shu L, Li L 2007 Appl. Phys. Lett. 90 202902
[8]	Grinberg I, Suchomel M R, Davies P K, Rappe A M 2005 J. Appl. Phys. 98 094111
[9]	Duan R, Speyer R F, Alberta E, Shrout T R 2004 J. Mater. Res. 19 2185
[10]	Zhang S, Xia R, Randall C A, Shrout T R, Duan R, Speyer R F 2005 J. Mater. Res. 20 2067
[11]	Ko S W, Yeo H G, Trolier-McKinstry S 2009 Appl. Phys. Lett. 95 162901
[12]	Lee S Y, Ko S W, Lee S, Trolier-McKinstry S 2012 Appl. Phys. Lett. 100 212905
[13]	Qin B, Chen Y, Jiang Y, Xue X, Xiao D, Zhu J 2007 Proceedings of the 16th IEEE International Symposium on Applications of Ferroelectric 616–617
[14]	Wilke R H T, Moses P, Jousse P, Yeager C, Trolier-McKinstry S 2012 Sensors and Actuators A 173 152
[15]	Shannon R D 1976 Acta Cryst. A 32 751
[16]	Li Y, Yang Y, Yao J, Viswan R, Wang Z, Li J, Viehland D 2012 Appl. Phys. Lett. 101 022905
[17]	Sun P N, Cui L, Lu T Q 2009 Chin. Phys. B 18 1658
[18]	Yang N, Chen G H, Zhang Y 2000 Acta Phys. Sin. 49 2225 (in Chinese) [杨宁, 陈光华, 张阳 2000 49 2225]
[19]	Shimakawa Y, Kubo Y, Nakagawa Y, Goto S, Kamiyama T, Asano H, Izumi F 2000 Phys. Rev. B 61 6559
[20]	Noguchi Y, Miwa I, Goshima Y, Miyayama M 2000 Jpn. J. Appl. Phys. 39 L1259
[21]	Gharb N B, Trolier-McKinstry S 2005 J. Appl. Phys. 97 064106
[22]	Ihlefeld J F, Shelton C T 2012 Appl. Phys. Lett. 101 052902
[23]	Damjanovic D, Demartin M 1996 J. Phys. D: Appl. Phys. 29 2057

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