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采用脉冲激光沉积技术,在Si(111)衬底上成功制备出不同含量Na,Co共掺的ZnO薄膜.利用X射线衍射仪、原子力显微镜、荧光光谱仪以及四探针电阻率测试台对薄膜的结构、表面形貌和光电性质进行了表征.重点讨论了不同掺杂浓度对薄膜光电性质的影响.结果表明:Na,Co共掺没有改变ZnO的六角纤锌矿结构且掺杂导致薄膜仅有的的紫外发光峰出现红移.当Na,Co掺杂浓度分别为10%时,峰值最强且红移最明显,发光峰波长为397 nm,薄膜的电阻率最低,达到了8.34×10-1 Ω ·cm.深入讨论了
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关键词:
- 脉冲激光沉积 /
- Zn1-x-yNaxCoyO薄膜 /
- 光电性质 /
- 红移
Zn1-x-yNaxCoyO thin films were prepared by pulsed laser deposition (PLD) on Si(111) substrates. The X-ray diffraction(XRD), atomic force microscopy(AFM), fluorescence spectrometer and the Four-probe tester were used respectively to investigate the structure, surface structure, optical and electrical properties of the thin films. The optical and electrical properties of Zn1-x-yNaxCoyO doped with different Na-Co concentrations are investigated. The result indicates that the structure of films are zincite and the doping of Na-Co leads to the red-shift of the UV emission peak of ZnO. When the doping concentration of both Na and Go are 10%, the film has the highest fluoresence intensity located at 397 nm, and the lowest resistivity of 8.34×10-1 Ω ·cm is detected in this film. The reasons of above-mentioned phenomena are discussed in depth.-
Keywords:
- pulsed laser deposition /
- Zn1-x-yNaxCoyO thin films /
- optical and electrical properties /
- red-shift
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[1] Fan X M, Lian J S, Guo Z X 2005 Appl. Surf. Sci. 239 176
[2] Shan F K, Liu G X, Lee W J 2005 J. Crys. Grow. 277 284
[3] Wang Z Y, Hu L Z, Zhao J 2005 Vacuum. 78 53
[4] Chawla S, Jayanthi K, Khan Z H, Shah J, Kotnala R K 2010 Materials and Design. 31 1666
[5] Liu X, Shi E, Chen Z, Zhang H, Song L, Wang H, Yao S 2006 J.Cryst.Growth. 296 135
[6] Tak Y, Yong K J 2008 Phys. Chem. C 112 74
[7] Park C H, Zhang S B, Wei S H 2002 Phys. Rev. B 66 073202
[8] Wardle M G, Goss J P, Briddon P R 2005 Phys. Rev. B 71 155205
[9] Zhou X, Wang S Q, Lian G J, Xiong G C 2006 Chin. Phys. 15 199
[10] Liu Z W, Gu J F, Fu W J, Sun C W, Li Y, Zhang Q Y 2006 Acta Phys. Sin. 55 5479 (in Chinese) [刘志文、谷建峰、付伟佳、孙成伟、李 勇、张庆瑜 2006 55 5479]
[11] Gao L, Zhang J M 2009 Chin. Phys. B 18 4536
[12] Huang B W, Zhan H H, Wu Y P, Chen X H, Kang J Y 2010 Technological Sciences 53 309
[13] Liu C H,Liu B C, Fu Z X 2008 Chin. Phys. B 17 2292
[14] Huang J Z, Li S S, Feng X P 2010 Acta Phys. Sin. 59 5839 (in Chinese) [黄金昭、李世帅、冯秀鹏 2010 59 5839]
[15] Turner S, Tavernier S M F, Huyberechts G, Biermans E, Bals S, Batenburg K J, Tendeloo G V 2010 J. Nanopart. Res. 12 615
[16] Kim H, Cepler A, Osofsky M S 2007 Appl. Phys. Lett. 90 203508
[17] Guo W, Allenic A, Chen Y B 2007 Appl. Phys. Lett. 90 242108
[18] Wang J F 1998 Solid state physics tutorial (Shandong:Shandong University Press) p60 (in Chinese) [王矜奉1998 固体物理教程(山东:山东大学出版社)第60页]
[19] Lyudmila N D, Lyudmila L T U, Yurii M J 2008 Mater. Sci. 43 2143
[20] Lidia A, Gregorio B, Michele P 2008 J. Phys. Chem. C 112 4049
[21] Zhao Y, Fu Y J 2010 Acta Phys. Sin. 59 2679 (in Chinese) [赵 艳、蒋毅坚 2010 59 2679]
[22] Peng X P, Zang H, Wang Z G 2008 Luminescence 128 328
[23] Li S T, Cheng P F, Zhao L, Li J Y 2009 Acta Phys. Sin. 58 523 (in Chinese) [李盛涛、成鹏飞、赵 雷、李建英 2009 58 523]
[24] Yuan N Y, Fan L N, Li J H 2007 Appl. Surf. Sci. 253 4990
[25] Lin B X, Fu Z X, Jia Y B 2001 Appl. Phys. Lett. 79 943
[26] Kim K J, Park Y R 2002 Appl. Phys. Lett. 81 1420
[27] Ravindra S, Mahesh K, Sudhir C 2007 J. Mater. Sci. 42 4675
[28] Kim S, Wan I L, Hwang S K, Chongmu L 2007 J. Mater. Sci. 42 4845
[29] Elilarassi R, Chandrasekaran G 2010 Optoelectron. Lett. 6 0006
[30] Luan T B, Liu M, Bao SY, Zhang Q Y 2010 Acta Phys.Sin. 59 2042 (in Chinese) [栾田宝、刘 明、鲍善永、张庆瑜 2010 59 2042]
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