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ZnO films on silicon substrates are prepared by reactive sputtering and pulsed laser deposition, respectively. Their crystallinities, surface morphologies and photoluminescence actions are characterized using X-ray diffraction, scanning electron microscopy and photoluminescence spectroscopy correspondingly. Furthermore, the electrically pumped random laser actions of the two metal-insulator-semiconductor structured devices based on the sputtered and pulse laser deposition ZnO films respectively are comparatively investigated. It is found that the device fabricated using the pulse laser deposition ZnO film possesses a much lower threshold current for random lasing and higher output optical power. This is due to the fact that the pulse laser deposition ZnO film has much fewer defects, leading to remarkably lower optical loss during the multiple scattering within such a ZnO film.
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Keywords:
- random lasing /
- ZnO thin film /
- pulsed laser deposition /
- sputtering
[1] Wiersma D S 2008 Nat. Phys. 4 359
[2] Redding B, Choma M A, Cao H 2012 Nat. Photon. 6 355
[3] Gottardo S, Cavalieri S, Yaroschuck O, Wiersma D S 2004 Phys. Rev. Lett. 93 3901
[4] Polson R C, Vardeny Z V 2004 Appl. Phys. Lett. 85 1289
[5] Cao H, Zhao Y G, Ong H C, Ho S T, Dai J Y, Wu J Y, Chang R P H 1998 Appl. Phys. Lett. 73 3656
[6] Cao H, Zhao Y G, Ho S T, Seelig E W, Wang Q H, Chang R P H 1999 Phys. Rev. Lett. 82 2278
[7] Chai L, Wang Q Y, Zhang W L, Sun T, Huang J S, Wang K L 2003 Acta Phys. Sin. 52 2127 (in Chinese) [柴 路, 王清月, 张伟力, 孙 涛, 黄锦圣, 王克伦 2003 52 2127]
[8] Yu S F, Yuen C, Lau S P, Lee H W 2004 Appl. Phys. Lett. 84 3244
[9] Chen L, Lou Q H, Wang Z J, Dong J X, Wei Y R 2006 Acta Phys. Sin. 55 920 (in Chinese) [陈 雷, 楼祺洪, 王之江, 董景星, 魏运荣 2006 55 920]
[10] Wang C S, Chen Y L, Lin H Y, Chen Y T, Chen Y F 2007 Appl. Phys. Lett. 97 191104
[11] Fallert J, Dietz R J B, Sartor J, Schneider D, Klingshirn C, Kalt H 2009 Nat. Photon. 3 279
[12] Yang H Y, Yu S F, Li G P, Wu T 2010 Opt. Express 18 13647
[13] Leong E S P, Yu S F 2006 Adv. Mater. 18 1685
[14] Ma X Y, Chen P L, Li D S, Zhang Y Y, Yang D R 2007 Appl. Phys. Lett. 91 251109
[15] Chu S, Olmedo M, Yang Z, Kong J Y, Liu J L 2008 Appl. Phys. Lett. 93 181106
[16] Long H, Fang G, Huang H, Mo X, Xia W, Dong B, Meng X, Zhao X 2009 Appl. Phys. Lett. 95 013509
[17] Zhu H, Shan C X, Zhang J Y, Zhang Z Z, Li B H, Zhao D X, Yao B, Shen D Z, Fan X W, Tang Z K, Hou X H, Choy K L 2010 Adv. Mater. 22 1877
[18] Özgr Ü, Alivov Ya I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J, Morkoç H 2005 J. Appl. Phys. 98 041301
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[1] Wiersma D S 2008 Nat. Phys. 4 359
[2] Redding B, Choma M A, Cao H 2012 Nat. Photon. 6 355
[3] Gottardo S, Cavalieri S, Yaroschuck O, Wiersma D S 2004 Phys. Rev. Lett. 93 3901
[4] Polson R C, Vardeny Z V 2004 Appl. Phys. Lett. 85 1289
[5] Cao H, Zhao Y G, Ong H C, Ho S T, Dai J Y, Wu J Y, Chang R P H 1998 Appl. Phys. Lett. 73 3656
[6] Cao H, Zhao Y G, Ho S T, Seelig E W, Wang Q H, Chang R P H 1999 Phys. Rev. Lett. 82 2278
[7] Chai L, Wang Q Y, Zhang W L, Sun T, Huang J S, Wang K L 2003 Acta Phys. Sin. 52 2127 (in Chinese) [柴 路, 王清月, 张伟力, 孙 涛, 黄锦圣, 王克伦 2003 52 2127]
[8] Yu S F, Yuen C, Lau S P, Lee H W 2004 Appl. Phys. Lett. 84 3244
[9] Chen L, Lou Q H, Wang Z J, Dong J X, Wei Y R 2006 Acta Phys. Sin. 55 920 (in Chinese) [陈 雷, 楼祺洪, 王之江, 董景星, 魏运荣 2006 55 920]
[10] Wang C S, Chen Y L, Lin H Y, Chen Y T, Chen Y F 2007 Appl. Phys. Lett. 97 191104
[11] Fallert J, Dietz R J B, Sartor J, Schneider D, Klingshirn C, Kalt H 2009 Nat. Photon. 3 279
[12] Yang H Y, Yu S F, Li G P, Wu T 2010 Opt. Express 18 13647
[13] Leong E S P, Yu S F 2006 Adv. Mater. 18 1685
[14] Ma X Y, Chen P L, Li D S, Zhang Y Y, Yang D R 2007 Appl. Phys. Lett. 91 251109
[15] Chu S, Olmedo M, Yang Z, Kong J Y, Liu J L 2008 Appl. Phys. Lett. 93 181106
[16] Long H, Fang G, Huang H, Mo X, Xia W, Dong B, Meng X, Zhao X 2009 Appl. Phys. Lett. 95 013509
[17] Zhu H, Shan C X, Zhang J Y, Zhang Z Z, Li B H, Zhao D X, Yao B, Shen D Z, Fan X W, Tang Z K, Hou X H, Choy K L 2010 Adv. Mater. 22 1877
[18] Özgr Ü, Alivov Ya I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J, Morkoç H 2005 J. Appl. Phys. 98 041301
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