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中国物理学会期刊
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Duan Bao-Xing, Yang Yin-Tang. Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layersJ. Acta Physica Sinica, 2014, 63(5): 057302. DOI: 10.7498/aps.63.057302
Citation: Duan Bao-Xing, Yang Yin-Tang. Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layersJ. Acta Physica Sinica, 2014, 63(5): 057302. DOI: 10.7498/aps.63.057302
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Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers

Acta Phys. Sin., 2014, 63(5): 057302.
DOI: 10.7498/aps.63.057302
CSTR: 32037.14.aps.63.057302
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