| [1] |
Wang Shuai, Ge Chen, Xu Zu-Yin, Cheng Ai-Qiang, Chen Dun-Jun. Modeling of temperature effect on DC characteristics of microwave GaN devices. Acta Physica Sinica,
2024, 73(17): 177101.
doi: 10.7498/aps.73.20240765
|
| [2] |
Wu Peng, Li Ruo-Han, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatment. Acta Physica Sinica,
2023, 72(19): 198501.
doi: 10.7498/aps.72.20230553
|
| [3] |
Long Ze, Xia Xiao-Chuan, Shi Jian-Jun, Liu Jun, Geng Xin-Lei, Zhang He-Zhi, Liang Hong-Wei. Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga2O3 single crystal. Acta Physica Sinica,
2020, 69(13): 138501.
doi: 10.7498/aps.69.20200424
|
| [4] |
Dong Shi-Jian, Guo Hong-Xia, Ma Wu-Ying, Lv Ling, Pan Xiao-Yu, Lei Zhi-Feng, Yue Shao-Zhong, Hao Rui-Jing, Ju An-An, Zhong Xiang-Li, Ouyang Xiao-Ping. Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices. Acta Physica Sinica,
2020, 69(7): 078501.
doi: 10.7498/aps.69.20191557
|
| [5] |
Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian. Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2020, 69(20): 207301.
doi: 10.7498/aps.69.20200714
|
| [6] |
Liu Jing, Wang Lin-Qian, Huang Zhong-Xiao. Current collapse suppression in AlGaN/GaN high electron mobility transistor with groove structure. Acta Physica Sinica,
2019, 68(24): 248501.
doi: 10.7498/aps.68.20191311
|
| [7] |
Tang Wen-Xin, Hao Rong-Hui, Chen Fu, Yu Guo-Hao, Zhang Bao-Shun. p-GaN hybrid anode AlGaN/GaN diode with 1000 V operation. Acta Physica Sinica,
2018, 67(19): 198501.
doi: 10.7498/aps.67.20181208
|
| [8] |
Zhang Li, Lin Zhi-Yu, Luo Jun, Wang Shu-Long, Zhang Jin-Cheng, Hao Yue, Dai Yang, Chen Da-Zheng, Guo Li-Xin. High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications. Acta Physica Sinica,
2017, 66(24): 247302.
doi: 10.7498/aps.66.247302
|
| [9] |
Yuan Song, Duan Bao-Xing, Yuan Xiao-Ning, Ma Jian-Chong, Li Chun-Lai, Cao Zhen, Guo Hai-Jun, Yang Yin-Tang. Experimental research on the new Al0.25Ga0.75N/GaN HEMTs with a step AlGaN layer. Acta Physica Sinica,
2015, 64(23): 237302.
doi: 10.7498/aps.64.237302
|
| [10] |
Duan Bao-Xing, Yang Yin-Tang. Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers. Acta Physica Sinica,
2014, 63(5): 057302.
doi: 10.7498/aps.63.057302
|
| [11] |
Zhu Yan-Xu, Cao Wei-Wei, Xu Chen, Deng Ye, Zou De-Shu. Effect of different ohmic contact pattern on GaN HEMT electrical properties. Acta Physica Sinica,
2014, 63(11): 117302.
doi: 10.7498/aps.63.117302
|
| [12] |
Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2013, 62(15): 157202.
doi: 10.7498/aps.62.157202
|
| [13] |
Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2012, 61(4): 047301.
doi: 10.7498/aps.61.047301
|
| [14] |
Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica,
2012, 61(22): 227302.
doi: 10.7498/aps.61.227302
|
| [15] |
Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown vovtage analysis of new AlGaN/GaN high electron mobility transistor with the partial fixed charge in Si3N4 layer. Acta Physica Sinica,
2012, 61(24): 247302.
doi: 10.7498/aps.61.247302
|
| [16] |
Huang Yue, Gou Hong-Yan, Liao Zhong-Wei, Sun Qing-Qing, Zhang Wei, Ding Shi-Jin. Investigation on memory effect of MOS capacitors with Al2O3/Pt-nanocrystals/HfO2. Acta Physica Sinica,
2010, 59(3): 2057-2063.
doi: 10.7498/aps.59.2057
|
| [17] |
Wang Chong, Quan Si, Zhang Jin-Feng, Hao Yue, Feng Qian, Chen Jun-Feng. Simulation and experimental investigation of recessed-gate AlGaN/GaN HEMT. Acta Physica Sinica,
2009, 58(3): 1966-1970.
doi: 10.7498/aps.58.1966
|
| [18] |
Zhang Jin-Cheng, Zheng Peng-Tian, Dong Zuo-Dian, Duan Huan-Tao, Ni Jin-Yu, Zhang Jin-Feng, Hao Yue. The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure. Acta Physica Sinica,
2009, 58(5): 3409-3415.
doi: 10.7498/aps.58.3409
|
| [19] |
Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan. Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica,
2007, 56(5): 2895-2899.
doi: 10.7498/aps.56.2895
|
| [20] |
Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
2006, 55(11): 6085-6089.
doi: 10.7498/aps.55.6085
|
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