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An InP/InGaAsP uni-traveling-carrier double heterojunction phototransistor (UTC-DHPT) photodetector is simulated and analyzed in a two-dimensional (2D) model utilizing a numerical device simulator (Atlas). The effects of device structure parameters on operational performance, such as responsivity and characteristic frequency, are studied in detail. Simulation results indicate that the UTC-DHPT can ease the contradiction between detection efficiency and working speed, which exists in traditional heterojun-ction phototransistor and achieve both high responsivity (≥17.93 A/W) and high characteristic frequency (≥121.68 GHz) simultaneously.
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Keywords:
- uni-traveling-carrier /
- phototransistor /
- current amplification /
- responsivity
[1] Zhang L Z, Zuo Y H, Cao Q, Xue C L, Cheng B W, Zhang W C, Cao X L, Wang Q M 2012 Acta Phys. Sin. 61 138501 (in Chinese) [张岭梓, 左玉华, 曹权, 薛春来, 成步文, 张万昌, 曹学蕾, 王启明 2012 61 138501]
[2] Khan H A, Rezazadeh A A, Sonhaib S, Tauqeer T 2012 IEEE J. Quantum Elect. 48 576
[3] Kamitsuna H, Matsuoka Y, Yamahata S, Shigekawa N 2001 IEEE Trans. Microw. Theory 49 1921
[4] Kamitsuna H, Matsuoka Y, Yamahata S, Shigekawa N 2000 European Microwave Conference (EUMC) Paris, France, October, 2000 p1
[5] Chandrasekhar S, Lunardi L M, Gnauck A H, Hamm R A, Qua G J 1993 IEEE Photonic. Tech. L. 5 1316
[6] Kamitsuna H, Ishii K, Shibata T, Kurishima K, Ida M 2004 IEEE J. Sel. Top. Quant. 10 673
[7] Leven A, Houtsma V, Kopf R, Baeyens Y, Chen Y K 2004 Electron. Lett. 40 833
[8] Ishibashi T, Furuta T, Fushimi H, Kodama S, Ito H, Nagatsuma T, Shimizu N, Miyamoto Y 2000 IEICE Trans. Electron. 83 938
[9] Ito H, Kodama S, Muramoto Y 2004 IEEE J. Sel. Top. Quantum Electron. 10 709
[10] Chtioui M, Enard A, Carpentier D, Rousseau B, Lelarge F, Pommereau F, Achouche M 2008 IEEE Photon. Technol. Lett. 20 202
[11] Zuo Y H, Cao Q, Zhang Y, Zhang L Z, Guo J C, Xue C L, Cheng B W, Wang Q M 2011 Chin. Phys. B 20 018504
[12] Zhang Y X, Liao Z Y Zhao L J, Pan J Q, Zhu H L, Wang W 2010 Chin. Phys. B 19 074216
[13] Shi T, Xiong B, Sun C Z, Luo Y 2013 IEEE Photonic. Tech. L. 25 136
[14] Rouvalis E, Chtioui M, van Dijk F, Lelarge F, Fice M J, Renaud C C, Carpintero G A, Seeds A J 2012 Opt. Express 20 20090
[15] Ito H, Yoshimatsuc T, Yamamotoa H, Ishibashi T 2013 Proceedings of SPIE Volume 8716 Baltimore, Maryland, USA, April 29–30, 2013 p871602-1
[16] Wang L S, Zhao L J, Pan J Q, Zhang W, Wang H, Zhu H L, Wang W 2009 Opto-Electron. Rev. 17 242
[17] Schiellein J, Rosales M, Polleux J L, Algani C, Merlet T, Riet M, Godin J 2011 Proceedings of the 41st European Microwave Conference Manchester, UK, October 10–13, 2011 p949
[18] Ishibashi T, Kodama S, Shimizu N, Furuta T 1997 J. Appl. Phys. 36 6263
[19] Matsuoka Y, Sano E 1995 Solid-State Electron. 38 1703
[20] Matsuoka Y, Yamahata S, Kurishima K, Ito H 1996 Jpn. J. Appl. Phys 35 5646
[21] Liu W 1998 Handbook of Ⅲ-V Heterojunction Bipolar Transistors (1st Ed.) (Malden: Wiley-Interscience) p81
[22] Wang L S 2009 Ph. D. Dissertation (Beijing: Institute of Semiconductors, Chinese Academy of Science) (in Chinese) [王列松 2009 博士学位论文(北京: 中国科学院半导体研究所)]
[23] Srivastava S, Roenker K P 2004 Solid-State Electro. 48 461
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[1] Zhang L Z, Zuo Y H, Cao Q, Xue C L, Cheng B W, Zhang W C, Cao X L, Wang Q M 2012 Acta Phys. Sin. 61 138501 (in Chinese) [张岭梓, 左玉华, 曹权, 薛春来, 成步文, 张万昌, 曹学蕾, 王启明 2012 61 138501]
[2] Khan H A, Rezazadeh A A, Sonhaib S, Tauqeer T 2012 IEEE J. Quantum Elect. 48 576
[3] Kamitsuna H, Matsuoka Y, Yamahata S, Shigekawa N 2001 IEEE Trans. Microw. Theory 49 1921
[4] Kamitsuna H, Matsuoka Y, Yamahata S, Shigekawa N 2000 European Microwave Conference (EUMC) Paris, France, October, 2000 p1
[5] Chandrasekhar S, Lunardi L M, Gnauck A H, Hamm R A, Qua G J 1993 IEEE Photonic. Tech. L. 5 1316
[6] Kamitsuna H, Ishii K, Shibata T, Kurishima K, Ida M 2004 IEEE J. Sel. Top. Quant. 10 673
[7] Leven A, Houtsma V, Kopf R, Baeyens Y, Chen Y K 2004 Electron. Lett. 40 833
[8] Ishibashi T, Furuta T, Fushimi H, Kodama S, Ito H, Nagatsuma T, Shimizu N, Miyamoto Y 2000 IEICE Trans. Electron. 83 938
[9] Ito H, Kodama S, Muramoto Y 2004 IEEE J. Sel. Top. Quantum Electron. 10 709
[10] Chtioui M, Enard A, Carpentier D, Rousseau B, Lelarge F, Pommereau F, Achouche M 2008 IEEE Photon. Technol. Lett. 20 202
[11] Zuo Y H, Cao Q, Zhang Y, Zhang L Z, Guo J C, Xue C L, Cheng B W, Wang Q M 2011 Chin. Phys. B 20 018504
[12] Zhang Y X, Liao Z Y Zhao L J, Pan J Q, Zhu H L, Wang W 2010 Chin. Phys. B 19 074216
[13] Shi T, Xiong B, Sun C Z, Luo Y 2013 IEEE Photonic. Tech. L. 25 136
[14] Rouvalis E, Chtioui M, van Dijk F, Lelarge F, Fice M J, Renaud C C, Carpintero G A, Seeds A J 2012 Opt. Express 20 20090
[15] Ito H, Yoshimatsuc T, Yamamotoa H, Ishibashi T 2013 Proceedings of SPIE Volume 8716 Baltimore, Maryland, USA, April 29–30, 2013 p871602-1
[16] Wang L S, Zhao L J, Pan J Q, Zhang W, Wang H, Zhu H L, Wang W 2009 Opto-Electron. Rev. 17 242
[17] Schiellein J, Rosales M, Polleux J L, Algani C, Merlet T, Riet M, Godin J 2011 Proceedings of the 41st European Microwave Conference Manchester, UK, October 10–13, 2011 p949
[18] Ishibashi T, Kodama S, Shimizu N, Furuta T 1997 J. Appl. Phys. 36 6263
[19] Matsuoka Y, Sano E 1995 Solid-State Electron. 38 1703
[20] Matsuoka Y, Yamahata S, Kurishima K, Ito H 1996 Jpn. J. Appl. Phys 35 5646
[21] Liu W 1998 Handbook of Ⅲ-V Heterojunction Bipolar Transistors (1st Ed.) (Malden: Wiley-Interscience) p81
[22] Wang L S 2009 Ph. D. Dissertation (Beijing: Institute of Semiconductors, Chinese Academy of Science) (in Chinese) [王列松 2009 博士学位论文(北京: 中国科学院半导体研究所)]
[23] Srivastava S, Roenker K P 2004 Solid-State Electro. 48 461
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