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提出了一种具有超薄有源层的谐振腔增强型石墨烯光电探测器的设计方法, 利用谐振腔结构可以将光场限制在腔内, 有效增强探测器的吸收. 通过研究谐振腔内光场谐振条件及谐振模式下探测器响应度增强的机理, 建立了驻波效应下谐振腔增强型石墨烯光电探测器光吸收模型, 仿真分析谐振腔反射镜反射率、谐振腔腔长对于腔内光场增强器件性能的影响. 理论分析表明, 谐振腔增强型石墨烯光电探测器在850 nm处响应度可达0.5 A/W, 相比无腔状态下提高了32倍; 半高全宽为10 nm. 采用谐振腔结构能够提高石墨烯光电探测器件的光电响应, 为解决光电探测器响应度与响应速度之间的相互制约关系提供了途径.There is an increasing interest in grapheme photodetector for its applications, because graphene has rich optical and electronic properties, including zero band gap, high mobility and special optical absorption properties. A design of microcavity-enhanced photodetector based on ultra-thin graphene is proposed in this paper: detector absorption can be effectively improved by confining the light field in the microcavity. Through studying the light field resonant condition in the microcavity and enhanced mechanism of detector responsivity under resonant mode, the light absorption model of a microcavity-enhanced graphene photodetector under standing wave effect is established; it is analyzed that the influences of microcavity mirror reflectivity and length on detector performance are increased by light field. Further the optimal structure parameters and performance evaluations of microcavity-enhanced graphene photodetector at different incident wavelengths are demonstrated. Theoretical analysis shows that under the standing wave effect the effective absorption coefficient of monolayer graphene at the antinode is one multiple enlargement compared with no cavity; the microcavity length and topbottom mirror reflectivity directly affect the optical total phase during light folding back at one time in the microcavity, and the shift of the total optical phase changes the full width at half maximum (FWHM) of the responsivity of the microcavity-enhanced graphene photodetector. Through coordinating the relations among the microcavity length and reflectivities of two mirrors and the incident wavelength, it can be realized that the photodetector has a good characteristic of wavelength selectivity. At a nominal operating wavelength of 850 nm, the presented microcavity-enhanced graphene photodetector can reach a responsivity of 0.5 A/W, 32-fold increase compared with monolayer graphene photodetector with no cavity and FWHM can reach 10 nm, indicating that the designed photodetector has a high responsivity and a good charactoristic of narrowband. As for the application in the practical engineering, through adopting bias on the two sides of graphene in the cavity to speed up the migration velocity of the photon-generated carrier, more photon-generated carriers are produced to increase the photodetector responsivity. However, the increased level of photodetector responsivity will be impeded acctually on account of the high contact resistance between graphene and electrode, and the measured value will not equal the theoretical value, so the quantitative analysis on the value of the bias should be carried out. Through combining the microcavity with graphene the incident light can be confined to reflect multiple times between two mirrors in the microcavity to improve the graphene absorption, and then make the microcavity-enhanced graphene photodetector responsivity improved. Our approach can be used to improve the optical response of graphene photodetector, and provides a way to solve the trade-off between photodetector responsivity and response speed.
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Keywords:
- cavity /
- graphene photodetector /
- responsibility /
- wavelength selectivity
[1] Yin W H, Han Q, Yang X H 2012 Acta Phys. Sin. 61 248502 (in Chinese) [尹伟红, 韩勤, 杨晓红 2012 61 248502]
[2] Geim A K, Novoselov K S 2007 Nat. Mater. 6 183
[3] Wallace P R 1947 Phys. Rev. 71 622
[4] Novoselov K S, Geim A K, Morozov S V, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[5] Phaedon A 2010 Nano Lett. 10 4285
[6] Zhang Q H, Han J H, Feng G Y, Xu Q X, Ding L Z, Lu X X 2012 Acta Phys. Sin. 61 214209 (in Chinese) [张秋慧, 韩敬华, 冯国英, 徐其兴, 丁立中, 卢晓翔 2012 61 214209]
[7] Gao L, Guest J R, Guisinger N P 2010 Nano Lett. 10 3512
[8] Reina A, Son H, Jiao L Y, Fan B, Dresselhaus M S, Liu Z F, Kong J 2008 J. Phys. Chem. C 112 17741
[9] Zeng C, Guo J, Liu X M 2014 Appl. Phys. Lett. 105 121103
[10] Chen Y L, Feng X B, Hou D D 2013 Acta Phys. Sin. 62 187301 (in Chinese) [陈英良, 冯小波, 侯德东 2013 62 187301]
[11] Xia F N, Mueller T, Lin Y M, Valdes-Garcia A, Avouris P 2009 Nat. Nanotechnol. 4 839
[12] Mueller T, Xia F, Avouris P 2010 Nat. Photon. 4 297
[13] Liu Y, Cheng R, Liao L, Zhou H L, Bai J W, Liu G, Liu L X, Huang Y, Duan X F 2011 Nat. Commun. 2 579
[14] Yu W J, Liu Y, Zhou H L, Yin A X, Li Z, Huang Y, Duan X F 2013 Nature Nanotechnol. 8 952
[15] Fang Z Y, Liu Z, Wang Y M, Pulickel M A, Peter N, Naomi J H 2012 Nano Lett. 12 3808
[16] Fromherz T, Mueller T 2013 Nat. Photon. 7 892
[17] Wang X M, Cheng Z Z, Xu K, Tsang H K, Xu J B 2013 Nature Photon. SI. 7 888
[18] Gan X T, Shiue R J, Gao Y D, Meric I, Heinz T F, Shepard K, Hone J, Assefa S, Englund D 2013 Nat. Photon. 7 883
[19] Engel M, Steiner M, Lombardo A, Ferrari A C, Lohneysen H V, Avouris P, Krupke R 2012 Nat. Commun. 3 906
[20] Furchi M M, Urich A, Pospischil A, Lilley G, Unterrainer K, Detz H 2012 Nano Lett. 12 2773
[21] Zhou Y 2009 M. S. Dissertation (Chengdu:University of Electronic Science and Technology of China)(in Chinese)[周勇 2009 硕士学位论文(成都: 电子科技大学)]
[22] Schaub J D, Li R, Campbell J C, Schow C L, Neudeck G W, Denton J 1999 Photon. Technol. Lett. 11 1647
[23] Ferreira A, Peres N M R, Ribeiro R M, Stauber T 2012 Phys. Rev. B 85 115438
[24] Pepeljugoski P, Kuchta D, Kwark Y, Pleunis P, Kuyt G 2002 IEEE Photon. Technol. Lett. 14 717
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[1] Yin W H, Han Q, Yang X H 2012 Acta Phys. Sin. 61 248502 (in Chinese) [尹伟红, 韩勤, 杨晓红 2012 61 248502]
[2] Geim A K, Novoselov K S 2007 Nat. Mater. 6 183
[3] Wallace P R 1947 Phys. Rev. 71 622
[4] Novoselov K S, Geim A K, Morozov S V, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[5] Phaedon A 2010 Nano Lett. 10 4285
[6] Zhang Q H, Han J H, Feng G Y, Xu Q X, Ding L Z, Lu X X 2012 Acta Phys. Sin. 61 214209 (in Chinese) [张秋慧, 韩敬华, 冯国英, 徐其兴, 丁立中, 卢晓翔 2012 61 214209]
[7] Gao L, Guest J R, Guisinger N P 2010 Nano Lett. 10 3512
[8] Reina A, Son H, Jiao L Y, Fan B, Dresselhaus M S, Liu Z F, Kong J 2008 J. Phys. Chem. C 112 17741
[9] Zeng C, Guo J, Liu X M 2014 Appl. Phys. Lett. 105 121103
[10] Chen Y L, Feng X B, Hou D D 2013 Acta Phys. Sin. 62 187301 (in Chinese) [陈英良, 冯小波, 侯德东 2013 62 187301]
[11] Xia F N, Mueller T, Lin Y M, Valdes-Garcia A, Avouris P 2009 Nat. Nanotechnol. 4 839
[12] Mueller T, Xia F, Avouris P 2010 Nat. Photon. 4 297
[13] Liu Y, Cheng R, Liao L, Zhou H L, Bai J W, Liu G, Liu L X, Huang Y, Duan X F 2011 Nat. Commun. 2 579
[14] Yu W J, Liu Y, Zhou H L, Yin A X, Li Z, Huang Y, Duan X F 2013 Nature Nanotechnol. 8 952
[15] Fang Z Y, Liu Z, Wang Y M, Pulickel M A, Peter N, Naomi J H 2012 Nano Lett. 12 3808
[16] Fromherz T, Mueller T 2013 Nat. Photon. 7 892
[17] Wang X M, Cheng Z Z, Xu K, Tsang H K, Xu J B 2013 Nature Photon. SI. 7 888
[18] Gan X T, Shiue R J, Gao Y D, Meric I, Heinz T F, Shepard K, Hone J, Assefa S, Englund D 2013 Nat. Photon. 7 883
[19] Engel M, Steiner M, Lombardo A, Ferrari A C, Lohneysen H V, Avouris P, Krupke R 2012 Nat. Commun. 3 906
[20] Furchi M M, Urich A, Pospischil A, Lilley G, Unterrainer K, Detz H 2012 Nano Lett. 12 2773
[21] Zhou Y 2009 M. S. Dissertation (Chengdu:University of Electronic Science and Technology of China)(in Chinese)[周勇 2009 硕士学位论文(成都: 电子科技大学)]
[22] Schaub J D, Li R, Campbell J C, Schow C L, Neudeck G W, Denton J 1999 Photon. Technol. Lett. 11 1647
[23] Ferreira A, Peres N M R, Ribeiro R M, Stauber T 2012 Phys. Rev. B 85 115438
[24] Pepeljugoski P, Kuchta D, Kwark Y, Pleunis P, Kuyt G 2002 IEEE Photon. Technol. Lett. 14 717
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