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Owning to its sharp metal-insulator transition at ～340 K, VO2 is becoming an attractive candidate for the electrical and optical material. Here we report on the fabrication and characterization of VO2 thin film obtained from the V2O5 thin film annealed in Ar/H2 ambience. V2O5 thin film is fabricated by using the pulsed laser deposition system on the R-sapphire substrate under several different conditions by varying the substrate temperature and the pressure of the growth atmosphere to optimize the growth condition. Then we carry out the annealing treatment on the V2O5 thin film in different annealing conditions. The VO2 thin films are characterized using X-ray diffraction, X-ray photoelectron spectroscopy and R-T measurement. When annealed in a temperature range of 500–525 ℃ for 3 h in H2(5%)/Ar ambience, the V2O5 thin film can be converted into the mixed-structures of metastable monoclinic structure (B) and the monoclinic rutile structure (M) which is responsible for the phase-change property. And under the same conditions, when the annealing time reaches 4.5 h, the pure VO2(B) is obtained. Further we anneal the VO2(B) in pure Ar ambience and tentatively realize the resistivity reduced by nearly four orders with the temperature increasing from 25 ℃ to 105 ℃. The transition temperature is nearly 350 K. And the transition between VO2 (B) and VO2 (M) is realized.
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Keywords:
- VO2 thin film /
- metal-insulator transition /
- hydrogen annealing
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[23] Silversmit G, Depla D, Poelman H, Marin G B, De Gryse R 2004 J. Electron Spectrosc. Relat. Phenom. 135 167
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[1] Yue S, Du J, Zhang Y, Zhang Y H 2009 Chin. Phys. Lett. 26 117103
[2] Zhou P, Chen L Y, Li J,Tang T A, Lin Y Y 2008 Chin. Phys. Lett. 25 3742
[3] Liu W J, Shu Q Q, Ma X C, Bhagat S M, Lofland S E, Troyanchuk I O 2005 Chin. Phys. Lett. 22 938
[4] Liu X J, Huang Q J, Xu S, Zhang S Y, Luo A H 2004 Chin. Phys. Lett. 21 179
[5] Yan L, L H B, Chen Z H, Dai S Y, Tan G T, Yang G Z 2001 Chin. Phys. Lett. 18 1513
[6] Liu J, Wang C L, Su W B, Wang H C, Zhang J L, Mei L M 2011 Acta Phys. Sin. 60 087204 (in Chinese) [刘剑, 王春雷, 苏文斌, 王洪超, 张家良, 梅良模 2011 60 087204]
[7] Liu D Q, Zheng W W, Cheng H F, Liu H T 2009 Advanced Materials Research 79–82 pp747–750
[8] Sun D D, Chen Z, Wen Q Y, Qiu D H, Lai W E, Dong K, Zhao B H, Zhang H W 2013 Acta Phys. Sin. 62 017202 (in Chinese) [孙丹丹, 陈智, 文岐业, 邱东鸿, 赖伟恩, 董凯, 赵碧辉, 张怀武 2013 62 017202]
[9] Zhao G, Cheng X M, Wu F, Liang X Y, Tian H J, Du B Q 2012 Acta Phys. Sin. 61 218502 (in Chinese) [赵赓, 程晓曼, 吴峰, 梁晓宇, 田海军, 杜博群 2012 61 218502]
[10] Li J H, Yuan N Y, Chen W L H, Lin C L 2002 Acta Phys. Sin. 51 1788 (in Chinese) [李金华, 袁宁一, 陈王丽华, 林成鲁 2002 51 1788]
[11] Morin F J 1959 Phys. Rev. Lett. 3 34
[12] Yang Z, Hart S, Ko C, Yacoby A, Ramanathan S 2011 J. Appl. Phys. 110 033725
[13] Yuan N Y, Li J H, Lin C L 2002 Acta Phys. Sin. 51 852 (in Chinese) [袁宁一, 李金华, 林成鲁 2002 51 852]
[14] Popuri S R, Miclau M, Artemenko A, Labrugere c, Villesuzanne A, Pollet M 2013 Inorg. Chem. 52 4780
[15] Nagashima K, Yanagida T, Tanaka H, Kawai T 2006 Phys. Rev. B 74 172106
[16] Chen S S, Wang S F, Liu F Q, Yan G Y, Chen J C, Wang J L, Yu W, Fu G S 2012 Chin. Phys. B 21 087306
[17] Wang S F, Chen S S, Chen J C, Yan G Y, Qiao X Q, Liu F Q, Wang J L, Ding X C, Fu G S 2010 Acta Phys. Sin. 61 066804 (in Chinese) [王淑芳, 陈珊珊, 陈景春, 闫国英, 乔小齐, 刘富强, 王江龙, 丁学成, 傅广生 2012 61 066804]
[18] Ruzmetov D, Zawilski K T, Narayanamurti V, Ramanathan S 2007 J. Appl. Phys. 102 113715
[19] Hood P J, DeNatale J F 1991 J. Appl. Phys. 70 376
[20] Chae B G, Kim H T, Yun S J, Kim B J, Lee Y W, Youn D H, Kang K Y 2006 Electrochem. Solid-State Lett. 9 C12
[21] Kitchen W J, Proto G R 1971 J. Appl. Phys. 42 2140
[22] Case F C, Vac J 1988 Sci. Technol. A 6 123
[23] Silversmit G, Depla D, Poelman H, Marin G B, De Gryse R 2004 J. Electron Spectrosc. Relat. Phenom. 135 167
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