纳米VO2/ZnO复合薄膜的热致变色特性研究

朱慧群; 李毅; 周晟; 黄毅泽; 佟国香; 孙若曦; 张宇明; 郑秋心; 李榴; 沈雨剪; 方宝英

doi:10.7498/aps.60.098104

摘要

为提高VO2薄膜的热致变色性能,采用纳米结构和复合结构二者相结合的方法,通过磁控溅射技术先在玻璃衬底上制备高(002)取向ZnO薄膜,再在ZnO层上室温沉积钒金属薄膜,最后经热氧化处理获得纳米结构VO2/ZnO复合薄膜.利用变温拉曼光谱观察分析了VO2/ZnO薄膜相变前后的晶格畸变和键态的演变过程,讨论了薄膜的结构与热致红外开关特性和相变温度的内在关系.结果显示,与相同条件获得的同厚度的单层VO2薄膜相比,纳米VO

关键词:

Abstract

Based on thermo-optical phase transition effect, VO2/ZnO nanostructure composite films are designed and successfully prepared by depositing ZnO films with high (002) orientation on soda-lime glass substrates first, and then the vanadium dioxide films are fabricated by depositing vanadium metal films on ZnO films at room temperature and thermal oxidation treatment. The thermochromic properties of VO2/ZnO nanocomposite films are measured and compared with the single-layer VO2 films on SiO2 glass substrates with the same thickness. The lattice distortion and bonding state of the VO2/ZnO nanocomposite films before and after phase transition are observed and analyzed by Raman spectroscopy at the different temperatures. The relations of infrared switching properties and phase transition temperature to nanostructure and film thickness are discussed. The results show that the thermochromic optical properties are improved significantly. VO2/ZnO nano-composite films have high (002) orientation so that the infrared transmittance before phase transition is more than twice as large as that after phase transition, and the width of thermal hysteresis is narrowed by about 5℃ and phase transition temperature is decreased about 8℃. It suggestes that the nano-composite films can significantly reduce the phase transition temperature and enhance the infrared light switch modulation capabilities of VO2 thin films.

Keywords:

作者及机构信息

(1)上海理工大学,光电信息与计算机工程学院,上海 200093; (2)上海理工大学,光电信息与计算机工程学院,上海 200093;上海市现代光学系统重点实验室,上海 200093; (3)上海理工大学,光电信息与计算机工程学院,上海 200093;五邑大学,应用物理与材料学院,江门 529020

基金项目: 国家高技术研究发展计划(863计划) (批准号:2006AA03Z348),教育部科学技术研究重点项目(批准号:207033),上海市教育委员会科研创新重点项目(批准号:10ZZ94),广东省自然科学基金(批准号:10152902001000025),上海市研究生创新基金(批准号:JWCXSL1001)和上海市重点学科(批准号:S30502)资助的课题.

Authors and contacts

(1)College of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China; (2)College of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;School of Applied Physics and Materials, Wuyi University, Jiangmen Guangdong 529020, China; (3)College of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;Shanghai Key Laboratory of Modern Optical System, Shanghai 200093, China

参考文献

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施引文献

[1]	Nag J, Haglund Jr R F 2008 J.Phys.: Condens. Matter 20 1
[2]	Kyoung J, Seo M, Park H, Koo S, Kim H, Park Y, Kim B J, Ahn K, Park N, Kim H, Kim D S 2010 Optics Express 18 16452
[3]	Saeli M, Binions R, Piccirillo C 2009 Appl. Surf. Sci. 255 7291
[4]	Granqvist C G, Lansaker P C, Mlyuka N R 2009 Solar Energy Materials & Solar Cells 93 2032
[5]	Chen S H, Lai J J, Dai J, Ma H, Hongchen Wang H C, Yi X J 2009 Optics Express 17 24153
[6]	Piccirillo C, Binions R, Parkin I P 2008 Thin Solid Films 516 1992
[7]	Beteille F, Livage J 1998 J. Sol-Gel. Sci. Technol. 13 915
[8]	Lopez R, Boatner L A, Haynes T E 2002 J. Appl. Phys., 92 4031
[9]	Ruzmetov D, Senanayake S D, Narayanamurti V 2008 Phys. Rev. B 77 195442
[10]	Li J, Dho J 2010 J. Crystal Growth 312 3287
[11]	Du J, Gao Y, Luo H 2011 Solar Energy Materials & Solar Cells, 95 1604
[12]	Chiu T W, Tonooka K, Kikuchi N 2010 Thin Solid Films 518 7441
[13]	Chiu T W, Tonooka K, Kikuchi N 2010 Appl. Surf. Sci. 256 6834
[14]	Kato K, Song P K, Odaka H, Shigesato Y 2003 Jpn. J. Appl. Phys. 42 6523
[15]	Wang H F, Li Y, Yu X J, Zhu H Q, Huang Y Z 2009 Proc. of SPIE 7509 75090P-1
[16]	Li Y, Yi X J, Zhang T X 2005 Chinese Optics Lett. 3 719
[17]	Pan M X, Chao X Zh, Li Y X 2004 Acta Phys . Sin. 53 1956 (in Chinese) [潘梦霄、曹兴忠、李养贤 2004 53 1956]
[18]	Yuan N Y, Li J H, Lin C L 2002 Acta Phys. Sin. 51 0852 (in Chinese) [袁宁一、李金华、林成鲁2002 51 0852 ]
[19]	Schilbe P 2002 Physica B 316-317 600
[20]	Rama N, Ramachandra Rao M S 2010 Solid State Comm. 150 1041
[21]	Song T T, He J, Lin L B, Chen J 2010 Acta Phys. Sin. 59 6480 (in Chinese) [宋婷婷、何捷、林理彬、陈军 2010 59 6480]

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