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Based on the Anderson tight-binding model, the electronic properties of disordered bilayer hexagonal boron nitride quantum films are investigated. Our numerical results show that the electrons in a disordered bilayer hexagonal boron nitride quantum film are localized, presenting an insulating property. However, for the monolayer disordered bilayer hexagonal boron nitride quantum film, the energy spectrum has persistent mobility edges which are independent of the disorder strength. This indicates that a metal-insulator transition occurs in the monolayer disorder structure. This is similar to the case in an order-disorder separated quantum film. The results could offer useful information for understanding and manipulating the electronic properties of bilayer hexagonal boron nitride quantum films.
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Keywords:
- bilayer hexagonal boron nitride quantum films /
- electronic property /
- metal-insulator transition
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[11] Balandin1 A A 2011 Nature Materials 10 569
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[20] Kubota Y, Watanabe K, Tsuda O, Taniguchi T 2007 Science 317 932
[21] Chen Z G, Zou J, Liu G, Li F, Wang Y, Wang L, Yuan X L, Sekiguchi T, Cheng H M, Lu G Q 2008 ACS Nano. 2 2183
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[23] Pereira J M, Vasilopoulos J P, Peeters F M 2007 Nano Lett. 7 946
[24] Ohta T, Bostwick A, Seyller T, Horn K, Rotenberg E 2006 Science 313 951
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[28] Shklovskii B I, Shapiro B, Sears B R, Lambrianides P, Shore H B 1993 Phys. Rev. B 47 11487
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[1] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[2] Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V, Geim A K 2005 Proc. Natl. Acad. Sci. USA 102 10451
[3] Gunther S, Danhardt S, Wang B, Bocquet M L, Schmitt S, Wintterlin J 2011 Nano. Lett. 11 1895
[4] Jiao L, Zhang L, Wang X, Diankov G, Dai H 2009 Nature 458 877
[5] Shi Z W, Yang R, Zhang L C, Wang Y, Liu D H, Shi D X, Wang E G, Zhang G Y 2011 Adv. Mater. 23 3061
[6] Hu X H,Xu J M,Sun L T 2012 Acta Phys. Sin. 61 047106 (in Chinese) [胡小会, 许俊敏, 孙立涛 2012 61 047106]
[7] Castro Neto A H, Guinea F, Peres N M R, Novoselov K S, Geim A K 2009 Rev. Mod. Phys. 81 109
[8] Tworzydlo J, Trauzettel B, Titov M, Rycerz A, Beenakker C W J 2002 Phys. Rev. Lett. 96 246802
[9] Zhang Y, Tan Y W, Stormer H L, Kim P 2005 Nature 438 201
[10] Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V, Firsov A A 2005 Nature 438 19
[11] Balandin1 A A 2011 Nature Materials 10 569
[12] Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V 2005 Proc. Natl Acad. Sci. USA 123 10451
[13] Jin C H, Lin F, Suenaga K, Iijima S 2009 Phys. Rev. Lett. 102 195505
[14] Corso M, Auwärter W, Muntwiler M, Tamai A, Greber T, Osterwalder J 2004 Science 303 217
[15] Pauli T K, Bhattacharya P, Bose D N 1990 Appl. Phys. Lett. 56 2648
[16] Li C, Bando Y, Zhi C Y, Huang Y, Golberg D 2009 Nanotechnology 20 385707
[17] Li j, Gui G, Zhong J X 2008 J. Appl. Phys. 104 094311
[18] Zheng F W, Zhou G, Liu Z R, Wu J, Duan W H, Gu B L, Zhang S B 2008 Phys. Rev. B 78 205415
[19] Watanabe K, Taniguchi T, Kanda H 2004 Nat. Mater. 3 404
[20] Kubota Y, Watanabe K, Tsuda O, Taniguchi T 2007 Science 317 932
[21] Chen Z G, Zou J, Liu G, Li F, Wang Y, Wang L, Yuan X L, Sekiguchi T, Cheng H M, Lu G Q 2008 ACS Nano. 2 2183
[22] Michel K H, Verberck B 2009 Phys. Status Solidi b 246 2802
[23] Pereira J M, Vasilopoulos J P, Peeters F M 2007 Nano Lett. 7 946
[24] Ohta T, Bostwick A, Seyller T, Horn K, Rotenberg E 2006 Science 313 951
[25] Li J, Gui G, Sun L Z, Zhong J X 2010 Acta Phys. Sin. 59 8820 (in Chinese) [李金, 桂贵, 孙立忠, 钟建新 2012 59 8820]
[26] Zhong J X, Stocks G M 2007 Phys. Rev. B 75 033410
[27] Zhong J X, Stocks G M 2006 Nano Lett. 6 128
[28] Shklovskii B I, Shapiro B, Sears B R, Lambrianides P, Shore H B 1993 Phys. Rev. B 47 11487
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