Flat-roof of dynamic equilibrium phenomenon in static negative biase temperature instability effect on power metal-oxide-semiconductor field-effect transistor

Zhang Yue; Zhuo Qing-Qing; Liu Hong-Xia; Ma Xiao-Hua; Hao Yue

doi:10.7498/aps.62.167305

Abstract

The effect of static negative bias temperature instability stress on p-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability degradation presents the trend which follows the reaction-diffusion (R-D) theory on the exaggerated time scale. A flat-roof section is observed under the varying stress condition, which can be considered as the dynamic equilibrium phase through the simulation verification based on the R-D model. The analysis of the simulated results also provides the explanation for the difference in the time duration of the dynamic equilibrium phase under the condition of varying stress voltage.

Keywords:

Authors and contacts

1.
School of Microelectronics, Xidian University, Xi’an 710071, China;
2.
School of Technical Physics, Xidian University, Xi’an 710071, China;
3.
Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xi’an 710071, China
Funds: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Fund for the Central Universities, China (Grant No. K50511250008).

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Cited By

[1]	Huard V, Denais M, Parthasarathy C 2006 Microelectron. Reliab. 46 1
[2]	Schroder D K, Babcock J A 2003 J. Appl. Phys. 94 1
[3]	Stathis J H, Zafar S 2006 Microelectron. Reliab. 46 270
[4]	Cao Y R, Ma X H, Hao Y, Tian W C 2010 Chin. Phys. B 19 097306
[5]	Ma X H, Cao Y R, Hao Y 2010 Chin. Phys. B 19 1173068
[6]	Li Z H, Liu H X, Hao Y 2006 Acta Phys. Sin. 55 820 (in Chinese)
[7]	Huard V, Denais M, Perrier F, Revil N, Parthasarathy C, Bravaix A, Vincent E 2005 Microelectron. Reliab. 45 83
[8]	Alam M A, Kufluoglu H, Varghese D, Mahapatra S 2007 Microelectron. Reliab. 47 853
[9]	Grasser T, Kaczer B, Gos W, Reisinger H, Aichinger T, Hehenberger P, Wagner P, Schanovsky F, Franco J, Roussel P, Nelhiebel M 2010 Proceedings of IEEE International Electron Devices Meeting San Francisco, USA, December 6-8, 2010 p82
[10]	Stojadinović N, Danković D, Djorić-Veljković S, Davidović V, Manić I, Golubović S 2005 Microelectron. Reliab. 45 1343
[11]	Danković D, Manić I, Djorić-Veljković S, Davidović V, Golubović S, Stojadinoviv N 2006 Microelectron. Reliab. 46 1828
[12]	Bhardwaj S, Wang W, Vattikonda R, Cao Y, Vrudhula S 2008 IET Circuit Dev. Syst. 2 361
[13]	Alam M A, Mahapatra S 2005 Microelectron. Reliab. 45 71
[14]	Mahapatra S, Goel N, Desai S, Gupta S, Jose B, Mukhopadhyay S, Joshi K, Jain A, Islam A E, Alam M A 2013 IEEE Trans. Electron Dev. 60 901
[15]	Danković D, Manić I, Djorić-Veljković S, Golubović S, Stojadinović N 2008 Proceedings of the 26th International Conference on Microelectronics Niš, Serbia, May 11-14, 2008 p599
[16]	Ogawa S, Shiono N 1995 Phys. Rev. B 51 4218
[17]	Kufluoglu H, Alam M A 2006 IEEE Trans. Electron Dev. 53 1120

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Catalog

Vol. 62, Issue 16 - 2013-08-20

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