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For quantitative study of time constant and degradation ratio of degradation parameters which correspond to different failure mechanisms in pseudomorphic high electron mobility transistor (PHEMT) gate current degradation process, a PHEMT gate current degradation model is established based on the relationship between reaction volume concentration and reaction rate in the process of degradation. The degradation law of PHEMT electrical parameters is obtained using online experiment method. The parameter degradation law with the time is analyzed and the failure mechanism which affects gate current degradation in different time period is obtained. Meanwhile, based on the gate current parameter degradation model, time constant and degradation ratio of degradation parameters, which correspond to different failure mechanisms, are also obtained.
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Keywords:
- PHEMT /
- gate current /
- Schottky contact /
- degradation model
[1] Jason B S, Jiann S Y 2012 Microelectron. Reliab. 52 2932
[2] Liu H X, Zheng X F, Han X L, Hao Y, Zhang M 2003 Acta Phys. Sin. 52 2576 (in Chinese) [刘红侠, 郑雪峰, 韩晓亮, 郝跃, 张绵 2003 52 2576]
[3] Gaudenzio M,Alessadro P, Youcef H, Claudio C, Eneico Z 1996 Appl. Phys. Lett. 69 1411
[4] Huang H K, Wang C S, Wang Y H, Wu C L, Chang C S 2003 Proceedings of GaAs Reliability Workshop Baltimore, USA, October 21, 2001 p57
[5] Gaudenzio M, Eneico Z 2002 Microelectron. Reliab. 42 685
[6] Chen K H, Chang C Y, Leu L C, Lo C F, Chu B H 2010 J.Vac. Sci. Technol. B 28 365
[7] Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 60 128501]
[8] Yang Y H 2012 Physical Chemistry (Beijing: Higher Education Press) (in Chinese) [杨永华 2012 物理化学 (北京: 高等教育出版社)]
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[1] Jason B S, Jiann S Y 2012 Microelectron. Reliab. 52 2932
[2] Liu H X, Zheng X F, Han X L, Hao Y, Zhang M 2003 Acta Phys. Sin. 52 2576 (in Chinese) [刘红侠, 郑雪峰, 韩晓亮, 郝跃, 张绵 2003 52 2576]
[3] Gaudenzio M,Alessadro P, Youcef H, Claudio C, Eneico Z 1996 Appl. Phys. Lett. 69 1411
[4] Huang H K, Wang C S, Wang Y H, Wu C L, Chang C S 2003 Proceedings of GaAs Reliability Workshop Baltimore, USA, October 21, 2001 p57
[5] Gaudenzio M, Eneico Z 2002 Microelectron. Reliab. 42 685
[6] Chen K H, Chang C Y, Leu L C, Lo C F, Chu B H 2010 J.Vac. Sci. Technol. B 28 365
[7] Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 60 128501]
[8] Yang Y H 2012 Physical Chemistry (Beijing: Higher Education Press) (in Chinese) [杨永华 2012 物理化学 (北京: 高等教育出版社)]
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