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In the present paper, function test of different test pattern was used to investigate function failure of static random access memory (SRAM) induced by the total dose effect. By comparing the function test results of different test pattern and single error bit, it is shown that the failure mode of the device is data retention fault, and different storage cell had diverse data retention time, the fault module of device is the storage cell. We discussed the reason for these phenomena in detail using simple circuit model of storage cell, and also analyzed the influence of these phenomena on test method to evaluate the total dose radiation damage of SRAM.
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Keywords:
- SRAM /
- function failure /
- test pattern /
- data retention fault
[1] Lu H, Yin F, Gao J 2005 Microprocessors 5 6 (in Chinese) [陆虹, 尹放, 高杰 2005 微机处理 5 6]
[2] Oldham T R, McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483
[3] Francis P, Flandre D, Colinge J P 1995 IEEE Trans. Nucl. Sci. 42 83
[4] Aivars J L, Steven R M, Oldham T R, Robertson D N 1996 IEEE Trans. Nucl. Sci. 43 3103
[5] Robin H P, Joel J C, Robert L R, Keith W G 1986 IEEE Trans. Nucl. Sci. NS-33 1535
[6] Li M, Yu X F, Xue Y G, Lu J, Cui J W, Gao B 2012 Acta Phys. Sin. 61 106103 (in Chinese) [李明, 余学峰, 薛耀国, 卢健, 崔江维, 高博 2012 61 106103]
[7] Li M, Yu X F, Xu F Y, Li M S, Gao B, Cui J W, Zhou D, Xi S B, Wang F 2012 Atomic Energy Science and Technology 46 507 (in Chinese) [李明, 余学峰, 许发月, 李茂顺, 高博, 崔江维, 周东, 席善斌, 王飞 2012 原子能科学技术 46 507]
[8] He C H, Geng B, He B P, Yao Y J, Li Y H, Peng H L, Lin D S, Zhou H, Chen Y S 2004 Acta Phys. Sin. 53 194 (in Chinese) [贺朝会, 耿斌, 何宝平, 姚育娟, 李永宏, 彭宏论, 林东生, 周辉, 陈雨生 2004 53 194]
[9] Li M, Yu X F, Lu J, Gao B, Cui J W, Zhou D, Xu F Y, Xi S B, Wang F 2011 Nuclear Techniques 34 452 (in Chinese) [李明, 余学峰, 卢健, 高博, 崔江维, 周东, 许发月, 席善斌, 王飞 2011 核技术 34 452]
[10] Chumakov A I, Yanenko A V 1996 IEEE Trans. Nucl. Sci. 43(6) 3109
[11] Schwank J R, Dodd P E, Shaneyfelt M R 2004 IEEE Trans. Nucl. Sci. 51 3692
[12] Schwank J R, Shaneyfelt M R, Felix J A 2006 IEEE Trans. Nucl. Sci. 53 1772
[13] Jha N K, Gupta S Testing of Digital Systems (New York: Cambridge University Press)
[14] Dilillo L, Patrick G, Serge P 2005 VLSI Test Symposium, Proceedings. 23rd IEEE Palm Springs California May 1-5 183
[15] Oldham T R, McGamty J M, Lelis A J, Terrell J M 1992 Reliability Physics of VLSI Microelectronic Devices Harry Diamond Laboratories Report HDL-TR- 2203
[16] Huff H, Shimura F 1985 Silicon Material Criteria for VLSI Electronics Sol. St. Technology 103
[17] Oldham T R, Bennett K W 1993 IEEE Trans. Nucl. Sci. 40 1820
[18] Toshihiko H, Hirotada K, Shuji M 1990 IFEE Journal of Solid-Stat Circuits 25 1068
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[1] Lu H, Yin F, Gao J 2005 Microprocessors 5 6 (in Chinese) [陆虹, 尹放, 高杰 2005 微机处理 5 6]
[2] Oldham T R, McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483
[3] Francis P, Flandre D, Colinge J P 1995 IEEE Trans. Nucl. Sci. 42 83
[4] Aivars J L, Steven R M, Oldham T R, Robertson D N 1996 IEEE Trans. Nucl. Sci. 43 3103
[5] Robin H P, Joel J C, Robert L R, Keith W G 1986 IEEE Trans. Nucl. Sci. NS-33 1535
[6] Li M, Yu X F, Xue Y G, Lu J, Cui J W, Gao B 2012 Acta Phys. Sin. 61 106103 (in Chinese) [李明, 余学峰, 薛耀国, 卢健, 崔江维, 高博 2012 61 106103]
[7] Li M, Yu X F, Xu F Y, Li M S, Gao B, Cui J W, Zhou D, Xi S B, Wang F 2012 Atomic Energy Science and Technology 46 507 (in Chinese) [李明, 余学峰, 许发月, 李茂顺, 高博, 崔江维, 周东, 席善斌, 王飞 2012 原子能科学技术 46 507]
[8] He C H, Geng B, He B P, Yao Y J, Li Y H, Peng H L, Lin D S, Zhou H, Chen Y S 2004 Acta Phys. Sin. 53 194 (in Chinese) [贺朝会, 耿斌, 何宝平, 姚育娟, 李永宏, 彭宏论, 林东生, 周辉, 陈雨生 2004 53 194]
[9] Li M, Yu X F, Lu J, Gao B, Cui J W, Zhou D, Xu F Y, Xi S B, Wang F 2011 Nuclear Techniques 34 452 (in Chinese) [李明, 余学峰, 卢健, 高博, 崔江维, 周东, 许发月, 席善斌, 王飞 2011 核技术 34 452]
[10] Chumakov A I, Yanenko A V 1996 IEEE Trans. Nucl. Sci. 43(6) 3109
[11] Schwank J R, Dodd P E, Shaneyfelt M R 2004 IEEE Trans. Nucl. Sci. 51 3692
[12] Schwank J R, Shaneyfelt M R, Felix J A 2006 IEEE Trans. Nucl. Sci. 53 1772
[13] Jha N K, Gupta S Testing of Digital Systems (New York: Cambridge University Press)
[14] Dilillo L, Patrick G, Serge P 2005 VLSI Test Symposium, Proceedings. 23rd IEEE Palm Springs California May 1-5 183
[15] Oldham T R, McGamty J M, Lelis A J, Terrell J M 1992 Reliability Physics of VLSI Microelectronic Devices Harry Diamond Laboratories Report HDL-TR- 2203
[16] Huff H, Shimura F 1985 Silicon Material Criteria for VLSI Electronics Sol. St. Technology 103
[17] Oldham T R, Bennett K W 1993 IEEE Trans. Nucl. Sci. 40 1820
[18] Toshihiko H, Hirotada K, Shuji M 1990 IFEE Journal of Solid-Stat Circuits 25 1068
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