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Li Wei, Zhu Hui-Wen, Sun Tong, Qu Wen-Shan, Li Jian-Gang, Yang Hui, Gao Zhi-Xiang, Shi Wei, Wei Bin, Wang Hua. High endurance organic resistive switching memory based on 1, 2-dicyanobenzene and polymer composites. Acta Physica Sinica,
2023, 72(4): 048501.
doi: 10.7498/aps.72.20221507
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Zhou Shu-Ren, Zhang Hong, Mo Hui-Lan, Liu Hao-Wen, Xiong Yuan-Qiang, Li Hong-Lin, Kong Chun-Yang, Ye Li-Juan, Li Wan-Jun. Effect of N-doping on performance of ${\boldsymbol\beta}$-Ga2O3 thin film solar-blind ultraviolet detector. Acta Physica Sinica,
2021, 70(17): 178503.
doi: 10.7498/aps.70.20210434
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Zhu Xiao-Qin, Hu Yi-Feng. Application of Ge50Te50/Zn15Sb85 nanocomposite multilayer films in high thermal stability and low power phase change memory. Acta Physica Sinica,
2020, 69(14): 146101.
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Cai Meng-Yuan, Tang Chun-Mei, Zhang Qiu-Yue. Optimized Li storage performance of B, N doped graphyne as Li-ion battery anode materials. Acta Physica Sinica,
2019, 68(21): 213601.
doi: 10.7498/aps.68.20191161
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Guo Jia-Jun, Dong Jing-Yu, Kang Xin, Chen Wei, Zhao Xu. Effect of transition metal element X (X=Mn, Fe, Co, and Ni) doping on performance of ZnO resistive memory. Acta Physica Sinica,
2018, 67(6): 063101.
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Zhang Mei, Wen Li-Wei, Ding Jun, Zhang Ying. First-principles study on the uniaxial pressure induced topological quantum phase transitions of Ge2X2Te5 (X =Sb, Bi) thin films. Acta Physica Sinica,
2015, 64(10): 107301.
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Sun Jing-Yang, Wang Dong-Ming, Lü Ye-Gang, Wang Miao, Wang Yi-Man, Shen Xiang, Wang Guo-Xiang, Dai Shi-Xun. Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memory. Acta Physica Sinica,
2015, 64(1): 016103.
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Tian Man-Man, Wang Guo-Xiang, Shen Xiang, Chen Yi-Min, Xu Tie-Feng, Dai Shi-Xun, Nie Qiu-Hua. Phase change properties of ZnSb-doped Ge2Sb2Te5 films. Acta Physica Sinica,
2015, 64(17): 176802.
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Yang Guang-Min, Xu Qiang, Li Bing, Zhang Han-Zhuang, He Xiao-Guang. Quantum capacitance performance of different nitrogen doping configurations of graphene. Acta Physica Sinica,
2015, 64(12): 127301.
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Wang Dong-Min, Lü Ye-Gang, Song san-Nian, Wang Miao, Shen Xiang, Wang Guo-Xiang, Dai Shi-Xun, Song Zhi-Tang. Effect of Cu on the structure and phase-change characteristics of Sb2Te film for high-speed phase change random access memory. Acta Physica Sinica,
2015, 64(15): 156102.
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Dai Guang-Zhen, Dai Yue-Hua, Xu Tai-Long, Wang Jia-Yu, Zhao Yuan-Yang, Chen Jun-Ning, Liu Qi. First principles study on influence of oxygen vacancy in HfO2 on charge trapping memory. Acta Physica Sinica,
2014, 63(12): 123101.
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Wang Jia-Yu, Dai Yue-Hua, Zhao Yuan-Yang, Xu Jian-Bin, Yang Fei, Dai Guang-Zhen, Yang Jin. Research on charge trapping memory’s over erase. Acta Physica Sinica,
2014, 63(20): 203101.
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Wang Jia-Yu, Zhao Yuan-Yang, Xu Jian-Bin, Dai Yue-Hua. Effect of defect on the programming speed of charge trapping memories. Acta Physica Sinica,
2014, 63(5): 053101.
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He Mei-Lin, Xu Jing-Ping, Chen Jian-Xiong, Liu Lu. Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer. Acta Physica Sinica,
2013, 62(23): 238501.
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Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min. Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons. Acta Physica Sinica,
2011, 60(9): 097103.
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Liao Yuan-Bao, Xu Ling, Yang Fei, Liu Wen-Qiang, Liu Dong, Xu Jun, Ma Zhong-Yuan, Chen Kun-Ji. Study of structural and electrical properties of phase-change materials Ge1Sb2Te4 and Ge2Sb2Te5 thin films. Acta Physica Sinica,
2010, 59(9): 6563-6568.
doi: 10.7498/aps.59.6563
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Xu Ling, Tang Chao-Qun, Dai Lei, Tang Dai-Hai, Ma Xin-Guo. First-principles study of the electronic structure of N-doping anatase TiO2. Acta Physica Sinica,
2007, 56(2): 1048-1053.
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Peng Li-Ping, Xu Ling, Yin Jian-Wu. First-principles study the optical properties of anatase TiO2 by N-doping. Acta Physica Sinica,
2007, 56(3): 1585-1589.
doi: 10.7498/aps.56.1585
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Zhang Zu-Fa, Zhang Yin, Feng Jie, Cai Yan-Fei, Lin Yin-Yin, Cai Bing-Chu, Tang Ting-Ao, Chen Bomy. Study of Si-doped Sb2Te3 films for phase change memory. Acta Physica Sinica,
2007, 56(7): 4224-4228.
doi: 10.7498/aps.56.4224
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Sun Jin-Peng, Wang Tai-Hong. Coulomb blockade three-valued single-electron memory. Acta Physica Sinica,
2003, 52(10): 2563-2568.
doi: 10.7498/aps.52.2563
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