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FeSi2 is a promising environment-friendly semiconductor material. However it is difficult to obtain pure phase for such a line compound. To investigate the solubilities for a third alloying elements, in this work Fe3Si8M (M=B, Cr, Ni, Co) ternary alloys are designed based on the cluster-plus-glue-atom-model. Thin films are then prepared using magnetron sputtering. The as-deposited films are all amorphous and become crystallized after annealing at 850 for 4 h. It is shown that samples alloyed with third components Cr and B can reach single phase easily. However, the main phase is phase and the films tend to exhibit metallic characteristics while alloyed with Co. Of these films, the Fe2.7Si8.4B0.9 film presents the most prominent semiconductor performance, and it has a resistivity of 0.17 cm, a sheet carrier concentration of 2.81020 cm-3, a mobility of 0.13 cm2=Vs and a band-gap width of 0.65 eV. It is confirmed that doping a proper third component can expand the phase zone, exhibiting a similar semiconductor property to that of binary -FeSi2.
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Keywords:
- -FeSi2 /
- magnetron sputtering /
- amorphous film /
- semiconductor
[1] Bost M C, Mahan J E 1988 J. Appl. Phys. 64 2034
[2] Bost M C, Mahan J E 1985J. Appl. Phys. 64 2034
[3] Christensen N E 1990Phys. Rev. B 42 7148
[4] Raunau W, Niehus H, Schilling T, Comsa G 1993Surf. Sci. 286203
[5] Behar M, Bernas H, Desimoni J 1996 J. Appl. Phys. 79 752
[6] Filonov A B, Migas D B, Shaposhnikov V L 1996 J. Appl. Phys. 79 7708
[7] Jiang J X, Sasakawa T, Matsugi K 2005 J. Alloys. Compd. 391 115
[8] Nishida I 1973 Phys. Rev. B 7 2710
[9] Sun C M, Tsang H K, Wong S P, Ke N, Hark S K 2008 J. Luminescence. 128 1841
[10] Li X N, Nie D, Dong C 2002 J. Chin. Electron Microscopy Soc. 21 43 (in Chinese) [李晓娜, 聂东, 董闯 2002 电子显微学报 21 43]
[11] Li X N, Nie D, Dong C 2002 Acta Phys. Sin. 51 115 (in Chinese) [李晓娜, 聂冬, 董闯 2002 51 115]
[12] Dai Y N 2009 Binary Alloy Phase Diagrams (Beijing: Science press) p518 (in Chinese) [戴永年 2009 二元合金相图集 (北京: 科学出版社) 第518页]
[13] Fisk Z, Zhang H T, Maple M B 1993 Phys. Rev. Lett. 71 1748
[14] Moroni E G, Wolf W, Hafner J 1999 Phys. Rev. B 59 12860
[15] Guo G Y 2001 Physica. E 10 383
[16] Nishida I 1973Phys. Rev. B 7 2710
[17] Yamauchi I, Suganuma A, OkamotoT, Ohnaka I 1997 J. Mater. Sci. 32 4603
[18] Li X N, Nie D, Dong C 2002 Nucl. Instrum. Methods Phys. Res. B 194 47
[19] Terai Y, Maeda Y 2005Optl. Mater. 27 925
[20] He Z M, Platzek D, Stiewe C, Chen H Y 2007 J. Alloys Compd. 438 303
[21] Zhao X B, Chen H Y, Mller E, Drasar C 2005 Appl. Phys. A 80 1123
[22] Li S B, Li X N, Dong C, Jiang X 2010 Acta Phys. Sin. 59 299 (in Chinese) [李胜斌, 李晓娜, 董闯, 姜辛 2010 59 299]
[23] Dong C, Wang Q, Qiang J B, Wang Y M, Jiang N, Han G, Li Y H, Wu J, Xia J H 2007 J. Phys. D 40 R273
[24] Ken-ichiro T, Takashi S, Yoshihiro I, Fumio H 2000 Jpn. J. Appl. Phys. 39 789
[25] Milosavljević M, Shao G, Bibic N, Mckinty C N, Jeynes C, Homewood K P 2001 Appl. Phys. Lett. 791438
[26] Naito M, Ishimaru M, Hirotsu Y, Valdez J, Sickafus K E 2005 Appl. Phys. Lett. 87 241905(1)
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[1] Bost M C, Mahan J E 1988 J. Appl. Phys. 64 2034
[2] Bost M C, Mahan J E 1985J. Appl. Phys. 64 2034
[3] Christensen N E 1990Phys. Rev. B 42 7148
[4] Raunau W, Niehus H, Schilling T, Comsa G 1993Surf. Sci. 286203
[5] Behar M, Bernas H, Desimoni J 1996 J. Appl. Phys. 79 752
[6] Filonov A B, Migas D B, Shaposhnikov V L 1996 J. Appl. Phys. 79 7708
[7] Jiang J X, Sasakawa T, Matsugi K 2005 J. Alloys. Compd. 391 115
[8] Nishida I 1973 Phys. Rev. B 7 2710
[9] Sun C M, Tsang H K, Wong S P, Ke N, Hark S K 2008 J. Luminescence. 128 1841
[10] Li X N, Nie D, Dong C 2002 J. Chin. Electron Microscopy Soc. 21 43 (in Chinese) [李晓娜, 聂东, 董闯 2002 电子显微学报 21 43]
[11] Li X N, Nie D, Dong C 2002 Acta Phys. Sin. 51 115 (in Chinese) [李晓娜, 聂冬, 董闯 2002 51 115]
[12] Dai Y N 2009 Binary Alloy Phase Diagrams (Beijing: Science press) p518 (in Chinese) [戴永年 2009 二元合金相图集 (北京: 科学出版社) 第518页]
[13] Fisk Z, Zhang H T, Maple M B 1993 Phys. Rev. Lett. 71 1748
[14] Moroni E G, Wolf W, Hafner J 1999 Phys. Rev. B 59 12860
[15] Guo G Y 2001 Physica. E 10 383
[16] Nishida I 1973Phys. Rev. B 7 2710
[17] Yamauchi I, Suganuma A, OkamotoT, Ohnaka I 1997 J. Mater. Sci. 32 4603
[18] Li X N, Nie D, Dong C 2002 Nucl. Instrum. Methods Phys. Res. B 194 47
[19] Terai Y, Maeda Y 2005Optl. Mater. 27 925
[20] He Z M, Platzek D, Stiewe C, Chen H Y 2007 J. Alloys Compd. 438 303
[21] Zhao X B, Chen H Y, Mller E, Drasar C 2005 Appl. Phys. A 80 1123
[22] Li S B, Li X N, Dong C, Jiang X 2010 Acta Phys. Sin. 59 299 (in Chinese) [李胜斌, 李晓娜, 董闯, 姜辛 2010 59 299]
[23] Dong C, Wang Q, Qiang J B, Wang Y M, Jiang N, Han G, Li Y H, Wu J, Xia J H 2007 J. Phys. D 40 R273
[24] Ken-ichiro T, Takashi S, Yoshihiro I, Fumio H 2000 Jpn. J. Appl. Phys. 39 789
[25] Milosavljević M, Shao G, Bibic N, Mckinty C N, Jeynes C, Homewood K P 2001 Appl. Phys. Lett. 791438
[26] Naito M, Ishimaru M, Hirotsu Y, Valdez J, Sickafus K E 2005 Appl. Phys. Lett. 87 241905(1)
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