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The influences of carrier density, tensile strain, well width and barrier material component on the refractive index changes of TE mode and TM mode in quantum well are analyzed. Then the quantum wells having characteristics of both large refractive index change (on the order of 10-2) and low polarization dependence (on the order of 10-4) in a wavelength range from 1530 nm to 1570 nm are designed by comprehensively integrating the parameters above. The result shows that almost the same spectra of refractive index change can be acquired by integrating different groups of parameters.
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Keywords:
- refractive index change /
- carrier-induced /
- polarization dependence /
- quantum well
[1] Huang B, Liu H X, Wang X, Liang Y X, He Z, Yu S, Chi N 2009 OFC/NFOEC San Diego, USA, March 22-26, 2009 p1
[2] Geldenhuys R, Merwe J S, Thakulsukanant K, Wang Z, Chi N, Yu S 2011 Opt. Switch. Netw. 8 86
[3] Sadagopan T, Choi S J, Choi S J, Djordjev K, Dapkus P D 2005 IEEE Photon. Technol. Lett. 17 414
[4] Majumder S P, Sarker B C, Yoshino T 2003 Opt. Laser Technol. 35 261
[5] Kang J M, Lee S H, Kim J Y, Kwon H C, Kim T Y, Han S K 2009 Opt. Quant. Electron. 41 349
[6] Bennett B R, Soref R A, Del Alamo J A 1990 IEEE J. Quantum Electron. 26 113
[7] Connelly M J 2008 Appl. Phys. Lett. 93 181111
[8] Wenzel H, Erbert G, Enders P M 1999 IEEE J. Sel. Top. Quantum Electron. 5 637
[9] Xu G Y, Li A Z 2004 Acta Phys. Sin. 53 218 (in Chinese) [徐刚毅, 李爱珍 2004 53 218]
[10] Ahn D, Yoon S J, Chuang S L, Chang C S 1995 J. Appl. Phys. 78 2489
[11] Hua L L, Song Y R, Zhang P, Zhang X, Guo K 2010 Acta Opt. Sin. 30 1703 (in Chinese) [华玲玲, 宋晏蓉, 张鹏, 张晓, 郭凯 2010 光学学报 30 1703]
[12] Li X 2009 Optoelectronic Devices (New York: Cambridge University Press) p203
[13] Chuang S L 2008 Physics of Photonic Devices (2nd Ed.) (Hoboken: John Wiley and Sons) p803
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[1] Huang B, Liu H X, Wang X, Liang Y X, He Z, Yu S, Chi N 2009 OFC/NFOEC San Diego, USA, March 22-26, 2009 p1
[2] Geldenhuys R, Merwe J S, Thakulsukanant K, Wang Z, Chi N, Yu S 2011 Opt. Switch. Netw. 8 86
[3] Sadagopan T, Choi S J, Choi S J, Djordjev K, Dapkus P D 2005 IEEE Photon. Technol. Lett. 17 414
[4] Majumder S P, Sarker B C, Yoshino T 2003 Opt. Laser Technol. 35 261
[5] Kang J M, Lee S H, Kim J Y, Kwon H C, Kim T Y, Han S K 2009 Opt. Quant. Electron. 41 349
[6] Bennett B R, Soref R A, Del Alamo J A 1990 IEEE J. Quantum Electron. 26 113
[7] Connelly M J 2008 Appl. Phys. Lett. 93 181111
[8] Wenzel H, Erbert G, Enders P M 1999 IEEE J. Sel. Top. Quantum Electron. 5 637
[9] Xu G Y, Li A Z 2004 Acta Phys. Sin. 53 218 (in Chinese) [徐刚毅, 李爱珍 2004 53 218]
[10] Ahn D, Yoon S J, Chuang S L, Chang C S 1995 J. Appl. Phys. 78 2489
[11] Hua L L, Song Y R, Zhang P, Zhang X, Guo K 2010 Acta Opt. Sin. 30 1703 (in Chinese) [华玲玲, 宋晏蓉, 张鹏, 张晓, 郭凯 2010 光学学报 30 1703]
[12] Li X 2009 Optoelectronic Devices (New York: Cambridge University Press) p203
[13] Chuang S L 2008 Physics of Photonic Devices (2nd Ed.) (Hoboken: John Wiley and Sons) p803
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