Stability of organic light-emitting device

Zhang Xin-Wen; Hu Qi

doi:10.7498/aps.61.207802

Abstract

Organic light-emitting device (OLED) has well-recognized advantages in simple structure, low-driving voltage, flexibility, large area and availablity. It shows tremendous commercial applications in optical communication, information display and solid-state lighting, and has been one of the most attractive projects in optoelectronic information field over the last decade. Since 1987, OLED has rapidly developed, its brightness and efficiency has reached the practical demands. However, one of the main challenges to the industrialization is the stability of the device. In this paper, some of the extrinsic and intrinsic degradation mechanisms in OLEDs are summarized and discussed, such as the dark-spot formation, morphological instability of organic thin film, metal-atom diffusion, Alq3 cationic and positive charge accumulation. After that, we summarize the approaches to obtaining the long lifetime OLED. Finally, some perspectives on the stability of OLED are proposed.

Keywords:

Authors and contacts

1.
Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930600, 2012CB723402, 2012CB933301), the National Natural Science Foundation of China (Grant No. 61204048), the Natural Science Foundation of the Education Committee of Jiangsu Province, China (Grant No. 12KJB510013), the Scientific Research Foundation of Nanjing University of Posts and Telecommunications, China (Grant No. NY211025), and the Project of the Priority Academic Program Development of Jiangsu Higher Education Institutions.

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Cited By

[1]	Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[2]	Shen Z L, Burrows P E, Bulovic V, Forrest S R, Thompson M E 1997 Science 276 2009
[3]	McCarthy M A, Liu B, Donoghue E P, Kravchenko I, Kim D Y, So F, Rinzler A G 2011 Science 332 570
[4]	Helander M G, Wang Z B, Qiu J, Greiner M T, Puzzo D P, Liu Z W, Lu Z H 2011 Science 332 947
[5]	Sun Y R, Giebink N C, Kanno H, Ma B W, Thompson M E, Forrest S R 2006 Nature 440 908
[6]	Reineke S, Lindner F, Schwartz G, Seidler N, Walzer K, Lussem B, Leo K 2009 Nature 459 234
[7]	Muller C D, Falcou A, Reckefuss N, Rojahn M, Wiederhirn V, Rudati P, Frohne H, Nuyken O, Becker H, Meerholz K 2003 Nature 421 829
[8]	Han T H, Lee Y, Choi M R, Woo S H, Bae S H, Hong B H, Ahn J H, Lee T W 2012 Nat. Photonics 6 105
[9]	Krieg T, Petr A, Barkleit G, Dunsch L 1999 Appl. Phys. Lett. 74 3639
[10]	Mori T, Mitsuoka T, Ishii M, Fujikawa H, Taga Y 2002 Appl. Phys. Lett. 80 3895
[11]	Grozea D, Turak A, Yuan Y, Han S, Lu Z H, Kim W Y 2007 J. Appl. Phys. 101 033522
[12]	Aziz H, Xu G 1997 J. Phys. Chem. B 101 4009
[13]	Aziz H, Popovic Z, Tripp C P, Hu N X, Hor A M, Xu G 1998 Appl. Phys. Lett. 72 2642
[14]	Kim J S, Ho P K H, Murphy C E, Seeley A, Grizzi I, Burroughes J H, Friend R H 2004 Chem. Phys. Lett. 386 2
[15]	Ikeda T, Murata H, Kinoshita Y, Shike J, Ikeda Y, Kitano M 2006 Chem. Phys. Lett. 426 111
[16]	Lee J Y 2004 Chem. Phys. Lett. 393 260
[17]	Melpignano P, Baron-Toaldo A, Biondo V, Priante S, Zamboni R, Murgia M, Caria S, Gregoratti L, Barinov A, Kiskinova M 2005 Appl. Phys. Lett. 86 041105
[18]	Matsushima T, Murata H 2008 J. Appl. Phys. 104 034507
[19]	Wang Q, Luo Y C, Aziz H 2010 Appl. Phys. Lett. 97 063309
[20]	Wang Q, Aziz H 2011 Org. Electron. 12 1571
[21]	Li J, Sano T, Hirayama Y, Tomita T, Fujii H, Wakisaka K 2006 J. Appl. Phys. 100 034506
[22]	Aziz H, Luo Y C, Xu G, Popovic Z D 2006 Appl. Phys. Lett. 89 103515
[23]	Luo Y C, Aziz H, Xu G, Popovic Z D 2007 J. Appl. Phys. 101 054512
[24]	Choi S H, Lee T I, Baik H K, Roh H H, Kwon O, Suh D H 2008 Appl. Phys. Lett. 93 183301
[25]	Nenna G, Barra M, Cassinese A, Miscioscia R, Fasolino T, Tassini P, Minarini C, Della Sala D 2009 J. Appl. Phys. 105 123511
[26]	Tsai Y S, Wang S H, Chen C H, Cheng C L, Liao T C 2009 Appl. Phys. Lett. 95 233306
[27]	Chung S, Lee J H, Jeong J, Kim J J, Hong Y 2009 Appl. Phys. Lett. 94 253302
[28]	Aziz H, Popovic Z D 2004 Chem. Mater. 16 4522
[29]	Tak Y H, Kim K B, Park H G, Lee K H, Lee J R 2002 Thin Solid Films 411 12
[30]	Zhang X W, Wu Z X, Wang D D, Wang D W, Hou X 2009 Appl. Surf. Sci. 255 7970
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[32]	Akande W O, Soboyejo W 2009 Appl. Phys. Lett. 95 113304
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[34]	Jonda C, Mayer A B R, Stolz U, Elschner A, Karbach A 2000 J. Mater. Sci. 35 5645
[35]	McElvain J, Antoniadis H, Hueschen M R, Miller J N, Roitman D M, Sheats J R, Moon R L 1996 J. Appl. Phys. 80 6002
[36]	Savvateev V N, Yakimov A V, Davidov D, Pogreb R M, Neumann R, Avny Y 1997 Appl. Phys. Lett. 71 3344
[37]	Park J S, Chae H, Chung H K, Lee S I 2011 Semicond. Sci. Technol. 26 034001
[38]	Ishii M, Taga Y 2002 Appl. Phys. Lett. 80 3430
[39]	So F, Kondakov D 2010 Adv. Mater. 22 3762
[40]	Xu M S, Xu J B, Chen H Z, Wang M 2004 J. Phys. D: Appl. Phys. 37 2618
[41]	Vestweber H, Riess W 1997 Synth. Met. 91 181
[42]	Lee S T, Gao Z Q, Hung L S 1999 Appl. Phys. Lett. 75 1404
[43]	Suh M C, Chung H K, Kim S Y, Kwon J H, Chin B D 2005 Chem. Phys. Lett. 413 205
[44]	Luo Y C, Aziz H, Popovic Z D, Xu G 2007 J. Appl. Phys. 101 034510
[45]	Aziz H, Popovic Z D, Hu N X, Hor A M, Xu G 1999 Science 283 1900
[46]	Kondakov D Y, Sandifer J R, Tang C W, Young R H 2003 J. Appl. Phys. 93 1108
[47]	Han E M, Do L M, Yamamoto N, Fujihira M 1996 Thin Solid Films 273 202
[48]	Lee Y J, Lee H, Byun Y, Song S, Kim J E, Eom D, Cha W, Park S S, Kim J, Kim H 2007 Thin Solid Films 515 5674
[49]	Aziz H, Popovic Z, Xie S, Hor A M, Hu N X, Tripp C, Xu G 1998 Appl. Phys. Lett. 72 756
[50]	Adachi C, Nagai K, Tamoto N 1995 Appl. Phys. Lett. 66 2679
[51]	Cui J, Huang Q L, Veinot J C G, Yan H, Wang Q W, Hutchison G R, Richter A G, Evmenenko G, Dutta P, Marks T J 2002 Langmuir 18 9958
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[63]	Hamada Y, Sano T, Shibata K, Kuroki K 1995 Jpn. J. Appl. Phys. 34 L824
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[66]	Wang D D, Wu Z X, Zhang X W, Wang D W, Hou X 2010 J. Lumin 130 321
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[69]	Lu H T, Yokoyama M 2004 J. Cryst. Growth 260 186
[70]	Ho J J 2003 Electron. Lett. 39 458
[71]	Yu H Y, Feng X D, Grozea D, Lu Z H, Sodhi R N S, Hor A M, Aziz H 2001 Appl. Phys. Lett. 78 2595
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[80]	Park Y, Kim B, Lee C, Hyun A, Jang S, Lee J H, Gal Y S, Kim T H, Kim K S, Park J 2011 J. Phys. Chem. C 115 4843
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[82]	Choudhury K R, Lee J W, Chopra N, Gupta A, Jiang X Z, Amy F, So F 2009 Adv. Funct. Mater. 19 491
[83]	Hung L S, Zheng L R, Mason M G 2001 Appl. Phys. Lett. 78 673
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[96]	Chu T Y, Chen J F, Chen S Y, Chen C J, Chen C H 2006 Appl. Phys. Lett. 89 053503
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Vol. 61, Issue 20 - 2012-10-20

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