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The low hole mobility restricts the application of Si complementary metal-oxide-semiconductor in high frequency fields. In this paper, the SiGe p-metal-oxide-semiconductor field-effect-transistor (PMOSFET) is studied. By numeric modeling and analysis, the vertical potential distribution of the device is obtained through solving one-dimensional Poisson equations, and the threshold-voltage model is established. The effects of Ge-profile, thickness of Si buffer layer, thickness of Si cap layer and substrate doping on the threshold-voltage are discussed. In SiGe layer, the quantization effect of the potential well in valence band is taken into account. When the gate voltage is large enough, the holes in SiGe channel layer will transit to the Si/SiO2 interface due to band bending and energy level splitting, causing the degradation of device performance. Thus, the hole-sheet-density model in quantum channel of SiGe PMOSFET is established, and the concept of the maximum operating gate voltage is proposed, moreover the channel saturation induced by gate voltage is calculated and analyzed. The results show that the threshold voltage and the maximal operating gate voltage are related to Ge-profile, and a proper increase of Ge-profile can extend the range of the operating gate voltage effectively.
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Keywords:
- SiGe p-metal-oxide-semiconductor field-effect-transistor /
- threshold voltage /
- quantum well /
- hole-sheet-density
[1] Currie T, Leitz C W, Langdo T A, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 J. Vac. Sci. Tech. B 19 2268
[2] Roldan J B, Gamiz F, Cartujo-Cassinello P C, Cartujo P, Carceller J E, Roldan A 2003 IEEE Trans. Electron Dev. 50 1408
[3] Hu H Y, Zhang H M, Dai X Y, Lü Y, Shu B, Wang W, Jiang T, Wang X Y 2004 Acta Phys. Sin. 53 4314 (in Chinese) [胡辉勇, 张鹤鸣, 戴显英, 吕懿, 舒斌, 王伟, 姜涛, 王喜媛 2004 53 4314]
[4] Bindu B, Gupta N D, Gupta A D 2006 Solid-State Electronics 50 448
[5] Zou X, Xu J P, Li C X, Lai P T, Chen W B 2007 Microelectronics Reliability 47 391
[6] Arora N (translated by Zhang X) 1999 MOSFET Models for VLSI Circuit simulation: Theory and Practice (1st Ed.) (Beijing: Science Press) p213 (in Chinese) [艾罗拉 N著(张兴译) 1999 用于VLSI模拟的小尺寸MOS器件模型: 理论与实践 (第一版) (北京: 科学出版社) 第213页]
[7] Levinshtein M E, Rumyanstsev S L, Shur M S 2003 Properties of Advanced Semiconductor Materials (1st Ed.) (New York: John Wiley and Sons) p211
[8] Ye L X 1997 Monte Carlo Simulation of Small Semiconductor Devices (1st Ed.) (Beijing: Science Press) p157 (in Chinese) [叶良修 1997 小尺寸半导体器件的蒙特卡罗模拟 (第一版) (北京: 科学出版社) 第157页]
[9] Liu H X, Yin X K, Liu B J, Hao Y 2010 Acta Phys. Sin. 59 8877 (in Chinese) [刘红侠, 尹湘坤, 刘冰洁, 郝跃 2010 59 8877]
[10] Liu H X, Hao Y 2007 Acta Phys. Sin. 16 2111 (in Chinese) [刘红侠, 郝跃 2007 16 2111]
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[1] Currie T, Leitz C W, Langdo T A, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 J. Vac. Sci. Tech. B 19 2268
[2] Roldan J B, Gamiz F, Cartujo-Cassinello P C, Cartujo P, Carceller J E, Roldan A 2003 IEEE Trans. Electron Dev. 50 1408
[3] Hu H Y, Zhang H M, Dai X Y, Lü Y, Shu B, Wang W, Jiang T, Wang X Y 2004 Acta Phys. Sin. 53 4314 (in Chinese) [胡辉勇, 张鹤鸣, 戴显英, 吕懿, 舒斌, 王伟, 姜涛, 王喜媛 2004 53 4314]
[4] Bindu B, Gupta N D, Gupta A D 2006 Solid-State Electronics 50 448
[5] Zou X, Xu J P, Li C X, Lai P T, Chen W B 2007 Microelectronics Reliability 47 391
[6] Arora N (translated by Zhang X) 1999 MOSFET Models for VLSI Circuit simulation: Theory and Practice (1st Ed.) (Beijing: Science Press) p213 (in Chinese) [艾罗拉 N著(张兴译) 1999 用于VLSI模拟的小尺寸MOS器件模型: 理论与实践 (第一版) (北京: 科学出版社) 第213页]
[7] Levinshtein M E, Rumyanstsev S L, Shur M S 2003 Properties of Advanced Semiconductor Materials (1st Ed.) (New York: John Wiley and Sons) p211
[8] Ye L X 1997 Monte Carlo Simulation of Small Semiconductor Devices (1st Ed.) (Beijing: Science Press) p157 (in Chinese) [叶良修 1997 小尺寸半导体器件的蒙特卡罗模拟 (第一版) (北京: 科学出版社) 第157页]
[9] Liu H X, Yin X K, Liu B J, Hao Y 2010 Acta Phys. Sin. 59 8877 (in Chinese) [刘红侠, 尹湘坤, 刘冰洁, 郝跃 2010 59 8877]
[10] Liu H X, Hao Y 2007 Acta Phys. Sin. 16 2111 (in Chinese) [刘红侠, 郝跃 2007 16 2111]
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